Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: A process of manufacturing an automobile component comprises molding a high strength first element of steel at a temperature about 1550° C.; removing dirt from a surface of the first element of steel and increasing a roughness of surface thereof by sand polishing; placing the first element of steel in a mold; casting a low tensile strength second element of iron on the first element of steel in the mold at a temperature about 1200° C.; cooling the mold; initially polishing a surface of the half-finished component; and diffusing a melted copper into gaps between the first element of steel and the second element of iron at a temperature ranged from about 1080° C. to about 1200° C. to produce the finished component.