Abstract: Provided is a pharmaceutical composition including an active pharmaceutical ingredient, a toll-like receptor (TLR) agonist, a stimulator of interferon genes (STING) agonist, and a pharmaceutically acceptable carrier. Also provided are a method for inducing immune response and a method for treating or preventing cancer or an infectious disease, including administering an effective amount of the pharmaceutical composition to a subject in need thereof.

Abstract: In an embodiment, a structure includes: a first integrated circuit die including first die connectors; a first dielectric layer on the first die connectors; first conductive vias extending through the first dielectric layer, the first conductive vias connected to a first subset of the first die connectors; a second integrated circuit die bonded to a second subset of the first die connectors with first reflowable connectors; a first encapsulant surrounding the second integrated circuit die and the first conductive vias, the first encapsulant and the first integrated circuit die being laterally coterminous; second conductive vias adjacent the first integrated circuit die; a second encapsulant surrounding the second conductive vias, the first encapsulant, and the first integrated circuit die; and a first redistribution structure including first redistribution lines, the first redistribution lines connected to the first conductive vias and the second conductive vias.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: A method for analyzing reachability of a Petri net and deriving the control-related state of the PN extended from the kth variant closed-form formula (CFF) system for numbers, comprising by proving that the first system Gen-Right(k, gen) and the second system Gen_Left(k, k?gen) are topological inverse networks of Gen-Left(k, gen), the first system and the second system An invertible one-to-one mapping between; wherein the first series Gen-Right(k, gen) and Gen-Left(k, k?gen) have the same closed-form formula, and by putting Gen-Left(k, gen) in the verified closed-form formula The parameter gen can be obtained by replacing it with k?gen, and its corresponding reachability state can be directly obtained through a reversible one-to-one mapping.