Patents by Inventor Tsung-Hsuan Hong

Tsung-Hsuan Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etch stop layer in integrated circuits
    Patent number: 11942419
    Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu
  • Etch Stop Layer in Integrated Circuits
    Publication number: 20220336348
    Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Inventors: Shiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu
  • Etch stop layer in integrated circuits
    Patent number: 11404368
    Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: August 2, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
    Inventors: Shiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu
  • Etch Stop Layer in Integrated Circuits
    Publication number: 20200350244
    Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Shiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu
  • Etch stop layer in integrated circuits
    Patent number: 10720386
    Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: July 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu
  • Etch Stop Layer in Integrated Circuits
    Publication number: 20190043805
    Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
    Type: Application
    Filed: October 1, 2018
    Publication date: February 7, 2019
    Inventors: Shiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu
  • Etch stop layer in integrated circuits
    Patent number: 10090242
    Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: October 2, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu
  • Etch Stop Layer in Integrated Circuits
    Publication number: 20160358854
    Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
    Type: Application
    Filed: August 23, 2016
    Publication date: December 8, 2016
    Inventors: Shiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu
  • Etch stop layer in integrated circuits
    Patent number: 9437484
    Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: September 6, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu
  • ETCH STOP LAYER IN INTEGRATED CIRCUITS
    Publication number: 20160111325
    Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.
    Type: Application
    Filed: April 17, 2015
    Publication date: April 21, 2016
    Inventors: Shiu-Ko JangJian, Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu