Abstract: A projector sequentially generates light pulses to form a sparse grid array. The light pulses reflect off objects in an environment and are reflected towards a sensor array. The sensor array sequentially senses the reflected light pulses across pixels of the sensor array. A depth sensing system calculates depth information of objects in the environment based on the sequential nature of the pulse generation and the pulse sensing. The depth sensing system calculates depth information based on both the positional and temporal information of generated light pulses, and the positional and temporal information of sensed light pulses. The depth sensing system may generate a representation of the environment based on the depth information.

Abstract: In some examples, a sensor apparatus comprises: a pixel cell configured to generate a voltages, the pixel cell including a photodiode configured to generate charge in response to incoming light, and a charge storage device to convert the charge to a voltage; an integrated circuit configured to: determine a first captured voltage converted by the charge storage device during a first time period; compare the first captured voltage to a threshold voltage value; and in response to determining that the first captured voltage meets or exceeds the threshold voltage value: determine first time data corresponding to the first time period; and prevent the charge storage device from further generating a charge; and an analog-to-digital converter (ADC) configured to generate a digital pixel value based on the first captured voltage, and a memory to store the digital pixel value and the first time data.

Abstract: An image-sensing system includes multiple sensing modules. Each of the multiple sensing modules includes multiple optical sensors arranged in an array. Each of the multiple sensors is configured to be switched on and off to generate analog sensing data. The image-sensing system also includes an analog-to-digital converter (ADC) shared by the multiple optical sensors configured to convert analog sensing data generated by the multiple optical sensors into digital data. The image-sensing system also includes a processor configured to control the multiple sensing modules.

Abstract: In one example, an apparatus comprises: a photodiode to generate a charge in response to light within an exposure period having a first duration; a charge sensing unit to accumulate at least a part of the charge within the exposure period; a quantizer; and a controller to: determine, using the quantizer and within a measurement period having a second duration, whether a first quantity of the at least a part of the charge accumulated at the charge sensing unit exceeds a threshold, and a time it takes for the first quantity to exceed the threshold, wherein the first duration and the second duration are individually programmable; and based on whether the first quantity exceeds the threshold, output a first value representing the time or a second value representing a second quantity of the charge generated by the photodiode within the exposure period to represent an intensity of the light.

Abstract: In one example, an apparatus comprises: a photodiode configured to generate a charge in response to light within an exposure period, a charge sensing unit configured to accumulate at least a part of the charge as an overflow charge, a quantizer, and a controller configured to: within a first time within the exposure period, control the quantizer to perform a first quantization operation to quantize the overflow charge accumulated at the charge sensing unit to generate a first measurement output; within a second time after the first time, and within the exposure period, control the quantizer to perform a second quantization operation to quantize the overflow charge accumulated at the charge sensing unit to generate a second measurement output; and generate a digital output to represent an intensity of the light based on at least one of the first measurement output or the second measurement output.

Abstract: In one example, an apparatus comprises an array of pixel cells, each pixel cell including: a photodiode to generate a charge in response to incident light, a charge sensing unit configured to generate a voltage based on the charge, a quantizer configured to generate a digital output based on quantizing the voltage, and an in-pixel memory configured to store the digital output. The apparatus further includes a bus interface, an off-array frame memory, and a frame memory controller configured to: control the frame memory to receive, via the set of parallel interconnects, the digital outputs from the in-pixel memory of each pixel cell of the array of pixel cells; store the digital outputs in the frame memory; fetch the digital outputs from the frame memory; and transmit the digital outputs to a host device via the bus interface.

Abstract: An apparatus comprises a first photodiode, a second photodiode, a quantizer, a memory, and a controller configured to: set a first exposure period in which the first photodiode generates a first charge; set a second exposure period in which the second photodiode generates a second charge, the second exposure period being set based on the first exposure period and at least one of: a first time associated with a read out operation of the memory to a second apparatus, or a second time associated with a quantization operation by the quantizer; perform, using the quantizer, the first quantization operation of the first charge to generate a first digital output; and perform, using the quantizer, a second quantization operation of the second charge to generate a second digital output.

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate having a first region, a second region, and a third region; forming a first gate oxide layer on the first region, the second region, and the third region; and performing an etching process and an infrared treatment process at the same time to completely remove the first gate oxide layer on the second region for exposing the substrate.

Abstract: Some examples described herein include a noise-reduction circuit for an image sensor. The noise-reduction circuit can include a reference frame generator configured to generate a reference frame based on a set of image frames received from an image sensor during a calibration phase. The noise-reduction circuit can also include a memory coupled to the reference frame generator. The memory can receive the reference frame from the reference frame generator and store the reference frame for subsequent use during a noise-reduction phase. The noise-reduction circuit can further include a processor coupled to the memory. The processor can retrieve the reference frame from the memory and use the reference frame to reduce noise in an image frame received from the image sensor during the noise-reduction phase.

Abstract: In one example, an apparatus comprises a first photodiode, a second photodiode, a first floating diffusion, a second floating diffusion, a quantizer, and a controller. The controller can enable the first photodiode and the second photodiode to generate and accumulate photo charge within an exposure period, and use the quantizer to quantize reset voltages at the first floating diffusion and at the second floating diffusion to generate a first digital reset value and a second digital reset value. After the exposure period ends, the controller can transfer the photo charge from the first photodiode and the second photodiode to, respectively, the first floating diffusion and the second floating diffusion to generate a first signal voltage and a second signal voltage, and quantize the signal voltages into digital signal values using the quantizer. Digital representations can be generated based on the digital reset values and the digital signal values.

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate having a first region, a second region, and a third region; forming a first gate oxide layer on the first region, the second region, and the third region; and performing an etching process and an infrared treatment process at the same time to completely remove the first gate oxide layer on the second region for exposing the substrate.

Abstract: Methods and systems for quantizing a physical quantity, such as light, are provided. In one example, an apparatus comprises an analog-to-digital (A/D) converter configured to generate raw digital outputs based on performing at least one of: (1) a first quantization operation to quantize a physical stimulus within a first intensity range based on a first A/D conversion relationship, or (2) a second quantization operation to quantize the physical stimulus within a second intensity range based on a second A/D conversion relationship; and a raw output conversion circuit configured generate a refined digital output based on a raw digital output obtained from the A/D converter and at least one predetermined conversion parameter. The at least one conversion parameter compensates for a discontinuity between the first A/D conversion relationship and the second A/D conversion relationship.

Abstract: A color filter array includes a plurality of pixel filters arranged in a predetermined pattern composed of 2×2 pixel filters including two infrared filters and two visible filters. The two infrared filters in the predetermined pattern are disposed along one diagonal, and the two visible filters in the predetermined pattern are disposed along another diagonal.

Abstract: The disclosed system may include a first layer that includes multiple digital pixel sensors configured to detect light. The system may also include a second layer that includes various image processing components configured to process the light detected by the digital pixel sensors. Still further, the system may include a third layer that includes machine learning (ML) hardware processing components. The image processing components of the second layer may be communicatively connected to the ML hardware processing components of the third layer via multiple micro through-silicon vias (uTSVs). Various other methods of manufacturing, apparatuses, and computer-readable media are also disclosed.

Abstract: A stacked camera-image-sensor circuit may include (i) a first layer that includes a plurality of image sensing elements, (ii) a second layer that includes components that interface with the image sensing elements, and (iii) at least one additional layer that includes image-processing components. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: One example described herein includes the digital image sensor having a pixel cell with a photodiode and a quantizer circuit coupled to the pixel cell. The quantizer circuit includes a charge storage device that generates a voltage based on electric charge from the photodiode. The quantizer circuit also includes a single-input comparator that can switch from a first output state to a second output state in response to a ramp signal provided by a ramp generator. The quantizer circuit further includes a memory switch that can cause a counter value from a digital counter to be stored in a digital memory in response to the single-input comparator switching from the first output state to the second output state. The counter value can serve as a digital pixel value associated with the pixel cell.

Abstract: A new method for fabricating a semiconductor device with high selection phosphoric acid solution and eliminating the step of oxide removal and thus reducing oxide loss to improve yield gain and cost saving.

Abstract: In some examples, a sensor apparatus comprises: a pixel cell configured to generate a voltage, the pixel cell including one or more photodiodes configured to generate a charge in response to light and a charge storage device to convert the charge to a voltage; an integrated circuit comprising a plurality of integrated memory circuits and configured to: generate, based on a first voltage obtained from the charge storage device of the pixel cell, a first voltage value during a first time period; and generate, based on a second voltage generated by fixed pattern noise from the pixel cell and the integrated circuit, a second voltage value occurring a second time period; and one or more analog-to-digital converters (ADC) configured the convert the first voltage value to a first digital pixel value and the second voltage value to a second digital pixel value; and a processor configured to generate a first altered digital pixel value based on the first digital pixel value and the second digital pixel value.

Abstract: In some examples, a sensor apparatus comprises: a pixel cell configured to generate a voltages, the pixel cell including a photodiode configured to generate charge in response to incoming light, and a charge storage device to convert the charge to a voltage; an integrated circuit configured to: determine a first captured voltage converted by the charge storage device during a first time period; compare the first captured voltage to a threshold voltage value; and in response to determining that the first captured voltage meets or exceeds the threshold voltage value: determine first time data corresponding to the first time period; and prevent the charge storage device from further generating a charge; and an analog-to-digital converter (ADC) configured to generate a digital pixel value based on the first captured voltage, and a memory to store the digital pixel value and the first time data.

Abstract: A new method for fabricating a semiconductor device with high selection phosphoric acid solution and eliminating the step of oxide removal and thus reducing oxide loss to improve yield gain and cost saving.