Abstract: In an embodiment, a method of manufacturing a semiconductor device includes preparing a deposition processing chamber by flowing first precursors to form a dielectric coat along an inner sidewall of the deposition processing chamber and flowing a second precursor to form a hydrophobic layer over the dielectric coat. In addition one or more deposition cycles are performed. Next, the second precursor is flowed again to repair the hydrophobic layer.

Abstract: In an embodiment, a method of manufacturing a semiconductor device includes preparing a deposition processing chamber by flowing first precursors to form a dielectric coat along an inner sidewall of the deposition processing chamber and flowing a second precursor to form a hydrophobic layer over the dielectric coat. In addition one or more deposition cycles are performed. Next, the second precursor is flowed again to repair the hydrophobic layer.

Abstract: The present disclosure relates to some embodiments of a method for improving processing efficiency of a cluster tool. The method comprises transferring a first lot of wafers from a transfer load lock to a designated storage load lock and transferring a second lot of wafers from the transfer load lock to the designated storage load lock while the first lot of wafers is in the transfer load lock or the designated storage load lock. The designated storage load lock has the same structure as the transfer load lock and respectively has an inner load lock portal at an interface with the first transfer chamber and an outer load lock portal on a sidewall of a front end interface. The inner load lock portal of the designated storage load lock is retained opened during processing. The outer load lock portal of the designated storage load lock is retained closed during processing.

Abstract: The present disclosure relates to some embodiments of a method for improving processing efficiency of a cluster tool. The method comprises transferring a first lot of wafers from a transfer load lock to a designated storage load lock and transferring a second lot of wafers from the transfer load lock to the designated storage load lock while the first lot of wafers is in the transfer load lock or the designated storage load lock. The designated storage load lock has the same structure as the transfer load lock and respectively has an inner load lock portal at an interface with the first transfer chamber and an outer load lock portal on a sidewall of a front end interface. The inner load lock portal of the designated storage load lock is retained opened during processing. The outer load lock portal of the designated storage load lock is retained closed during processing.

Abstract: Some embodiments relate to a cluster tool for semiconductor manufacturing. The cluster tool comprises a first transfer chamber having a first transfer robot. The cluster tool further comprises a designated storage chamber and a transfer load lock attached to the first transfer chamber. The cluster tool further comprises a second transfer chamber connected to the first transfer chamber through a pair of via connector chambers, the second transfer chamber having a second transfer robot. The cluster tool further comprises at least three epitaxial deposition chamber attached to the second transfer chamber. The cluster tool further comprises a control unit configured to control the second transfer robot to transfer wafers between the designated storage chamber and the transfer load lock.

Abstract: An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.

Abstract: An optical heart rate earphone includes a front housing, a circuit board assembly, a rear housing assembled to a rear end of the front housing, and a light pipe. The front housing has a sound tube. At least one portion of the sound tube forms at least one light transmission gap. The circuit board assembly includes a circuit board and at least one optical sensor. The at least one optical sensor is corresponding to the at least one light transmission gap. The light pipe has a circular base. At least one portion of a periphery of the base protrudes rearward to form at least one transmittance slice. The light pipe is assembled to the sound tube. The at least one transmittance slice is wedged in the at least one light transmission gap.

Abstract: An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.

Abstract: An optical heart rate earphone includes a front housing, a circuit board assembly, a rear housing assembled to a rear end of the front housing, and a light pipe. The front housing has a sound tube. At least one portion of the sound tube forms at least one light transmission gap. The circuit board assembly includes a circuit board and at least one optical sensor. The at least one optical sensor is corresponding to the at least one light transmission gap. The light pipe has a circular base. At least one portion of a periphery of the base protrudes rearward to form at least one transmittance slice. The light pipe is assembled to the sound tube. The at least one transmittance slice is wedged in the at least one light transmission gap.

Abstract: Some embodiments relate to a cluster tool for semiconductor manufacturing. The cluster tool comprises a first transfer chamber having a first transfer robot. The cluster tool further comprises a designated storage chamber and a transfer load lock attached to the first transfer chamber. The cluster tool further comprises a second transfer chamber connected to the first transfer chamber through a pair of via connector chambers, the second transfer chamber having a second transfer robot. The cluster tool further comprises at least three epitaxial deposition chamber attached to the second transfer chamber. The cluster tool further comprises a control unit configured to control the second transfer robot to transfer wafers between the designated storage chamber and the transfer load lock.

Abstract: Apparatus and method for continuous pressure control in a process chamber. An apparatus includes a process chamber configured to receive a wafer; at least one pump coupled to the process chamber for maintaining pressure in the process chamber; an inlet for receiving reactive gasses into the process chamber; and a pressure control valve positioned between the at least one pump and configured to seal the process chamber to control the pressure in the process chamber. A method includes disposing at least one semiconductor wafer into a process chamber that is coupled to a pump for maintaining a sub-atmospheric pressure within the process chamber; introducing reactive process gasses into the process chamber; using a pressure control valve, at least partially sealing the process chamber; and increasing the pressure within the process chamber while exposing the semiconductor wafer to the process gasses to form epitaxial material. Additional embodiments are disclosed.