Abstract: A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. A trenched recess structure is formed in the second dielectric layer, which is filled with a light filter layer that is capped with a cap layer. A first passivation layer and a nanocavity construction layer are disposed on the cap layer. A nanocavity is formed in the nanocavity construction layer. The sidewall and bottom surface of the nanocavity is lined with a second passivation layer.

Abstract: A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. A trenched recess structure is formed in the second dielectric layer, which is filled with a light filter layer that is capped with a cap layer. A first passivation layer and a nanocavity construction layer are disposed on the cap layer. A nanocavity is formed in the nanocavity construction layer. The sidewall and bottom surface of the nanocavity is lined with a second passivation layer.

Abstract: A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. A trenched recess structure is formed in the second dielectric layer, which is filled with a light filter layer that is capped with a cap layer. A first passivation layer and a nanocavity construction layer are disposed on the cap layer. A nanocavity is formed in the nanocavity construction layer. The sidewall and bottom surface of the nanocavity is lined with a second passivation layer.

Abstract: A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. The dielectric layer is located on the substrate. The light pipe structure is located in the dielectric layer of the first region. The light pipe structure corresponds to the sensor. The pad is located in the dielectric layer of a second region. The shielding layer is located on the dielectric layer, wherein the light pipe structure is surrounded by the shielding layer. The protection layer is located on the shielding layer. At least one pad opening is disposed in the dielectric layer, the shielding layer, and the protection layer above the pad. The pad opening exposes a top surface of the corresponding pad.

Abstract: A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. The dielectric layer is located on the substrate. The light pipe structure is located in the dielectric layer of the first region. The light pipe structure corresponds to the sensor. The pad is located in the dielectric layer of a second region. The shielding layer is located on the dielectric layer, wherein the light pipe structure is surrounded by the shielding layer. The protection layer is located on the shielding layer. At least one pad opening is disposed in the dielectric layer, the shielding layer, and the protection layer above the pad. The pad opening exposes a top surface of the corresponding pad.

Abstract: A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. The dielectric layer is located on the substrate. The light pipe structure is located in the dielectric layer of the first region. The light pipe structure corresponds to the sensor. The pad is located in the dielectric layer of a second region. The shielding layer is located on the dielectric layer, wherein the light pipe structure is surrounded by the shielding layer. The protection layer is located on the shielding layer. At least one pad opening is disposed in the dielectric layer, the shielding layer, and the protection layer above the pad. The pad opening exposes a top surface of the corresponding pad.

Abstract: A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. A trenched recess structure is formed in the second dielectric layer, which is filled with a light filter layer that is capped with a cap layer. A first passivation layer and a nanocavity construction layer are disposed on the cap layer. A nanocavity is formed in the nanocavity construction layer. The sidewall and bottom surface of the nanocavity is lined with a second passivation layer.

Abstract: A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. The dielectric layer is located on the substrate. The light pipe structure is located in the dielectric layer of the first region. The light pipe structure corresponds to the sensor. The pad is located in the dielectric layer of a second region. The shielding layer is located on the dielectric layer, wherein the light pipe structure is surrounded by the shielding layer. The protection layer is located on the shielding layer. At least one pad opening is disposed in the dielectric layer, the shielding layer, and the protection layer above the pad. The pad opening exposes a top surface of the corresponding pad.

Abstract: A semiconductor fabrication method is disclosed. A substrate having thereon a plurality of semiconductor elements are provided. A dielectric layer is formed on the substrate. A plurality of openings is etched into the dielectric layer to respectively reveal the semiconductor elements. A material layer is coated on the substrate and the material layer fills into the openings. The material layer is then subjected to exposure and development processes to remove a portion of the material layer, thereby forming a material pattern. The material pattern is then polished by chemical mechanical polishing.