Patents by Inventor Tsung-Hung Hsieh

Tsung-Hung Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240178120
    Abstract: An integrated fan-out package includes a first redistribution structure, a die, conductive structures, an encapsulant, and a second redistribution structure. The first redistribution structure has first regions and a second region surrounding the first regions. A metal density in the first regions is smaller than a metal density in the second region. The die is disposed over the first redistribution structure. The conductive structures are disposed on the first redistribution structure to surround the die. Vertical projections of the conductive structures onto the first redistribution structure fall within the first regions of the first redistribution structure. The encapsulant encapsulates the die and the conductive structures. The second redistribution structure is disposed on the encapsulant, the die, and the conductive structures.
    Type: Application
    Filed: February 8, 2023
    Publication date: May 30, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Ming Weng, Tzu-Sung Huang, Wei-Kang Hsieh, Hao-Yi Tsai, Ming-Hung Tseng, Tsung-Hsien Chiang, Yen-Liang Lin, Chu-Chun Chueh
  • Patent number: 11935871
    Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hao-Yi Tsai, Cheng-Chieh Hsieh, Tsung-Hsien Chiang, Hui-Chun Chiang, Tzu-Sung Huang, Ming-Hung Tseng, Kris Lipu Chuang, Chung-Ming Weng, Tsung-Yuan Yu, Tzuan-Horng Liu
  • Patent number: 7036342
    Abstract: A yarn feeder for circular knitting machines that have a plurality of knitting needles includes a first threading hole, a second threading hole and a jutting yarn guiding member on a lower edge for feeding three yarns corresponding to a knitting needle. The three yarns enter a hook of the knitting needle through the first and second threading holes and the yarn guiding member. The hook is a common point, forms a first included angle with the yarn guiding member and the first yarn threading hole, and forms a second included angle with the first threading hole and the second threading hole. The second included angle is larger than or equal to the first included angle. Thus the three yarns can be directed smoothly into the hook of the knitting needle without forming interference. Traveling of the three yarns is smoother.
    Type: Grant
    Filed: September 19, 2005
    Date of Patent: May 2, 2006
    Assignee: Pai Lung Machinery Mill Co., Ltd.
    Inventor: Tsung-Hung Hsieh