Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: Two types of blue light blocking contact lenses are provided and are formed by curing different compositions. The first composition includes a blue light blocking component formed by mixing or reacting a first hydrophilic monomer and a yellow dye, a first colored dye component formed by mixing or reacting a second hydrophilic monomer and a first colored dye, at least one third hydrophilic monomer, a crosslinker, and an initiator. The first colored dye includes a green dye, a cyan dye, a blue dye, an orange dye, a red dye, a black dye, or combinations thereof. The second composition includes a blue light blocking component, at least one hydrophilic monomer, a crosslinker, and an initiator. The blue light blocking component is formed by mixing or reacting glycerol monomethacrylate and a yellow dye. Further, methods for preparing the above contact lenses are provided.

Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.

Abstract: In an embodiment, a structure includes: a first integrated circuit die including first die connectors; a first dielectric layer on the first die connectors; first conductive vias extending through the first dielectric layer, the first conductive vias connected to a first subset of the first die connectors; a second integrated circuit die bonded to a second subset of the first die connectors with first reflowable connectors; a first encapsulant surrounding the second integrated circuit die and the first conductive vias, the first encapsulant and the first integrated circuit die being laterally coterminous; second conductive vias adjacent the first integrated circuit die; a second encapsulant surrounding the second conductive vias, the first encapsulant, and the first integrated circuit die; and a first redistribution structure including first redistribution lines, the first redistribution lines connected to the first conductive vias and the second conductive vias.

Abstract: A semiconductor structure includes a substrate with a first surface and a second surface opposite to the first surface, a first and a second shallow trench isolations disposed in the substrate and on the second surface, a deep trench isolation structure in the substrate and coupled to the first shallow trench isolation, a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, a second dielectric layer disposed over the first dielectric layer and coupled to the deep trench isolation structure, a third dielectric layer comprising a horizontal portion disposed over the second dielectric layer and a vertical portion coupled to the horizontal portion, and a through substrate via structure penetrating the substrate from the first surface to the second surface and penetrating the second shallow trench isolation.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: A foldable electronic device includes a first body having an end and a first inclined surface, a second body having a second inclined surface, and a hinge module. The end includes an accommodating area. A virtual shaft line exists between sides of the first inclined surface and the second inclined surface that are closest to each other. The second body rotates relative to the first body through the virtual shaft line. The hinge module includes a first bracket adjacent to the first inclined surface, connected to the first body, and located in the accommodating area, a second bracket adjacent to the second inclined surface and connected to the second body, and a third bracket including a first end and a second end. The first bracket is connected to the first end through a first torsion assembly. The second bracket is connected to the second end through a second torsion assembly.

Abstract: A continuous process for preparing a polyester shrinkable film includes: pumping an amorphous PET-based polyester melt having a melt viscosity ?1 directly from a polymerization reactor into a first cooling zone; cooling the polyester melt to increase the melt viscosity thereof to a melt viscosity ?2 such that a difference between ?2 and ?1 ranges from 1500 poise to 3500 poise; feeding the polyester melt into a second cooling zone; cooling the polyester melt to increase the melt viscosity thereof to a melt viscosity ?3 ranging from 5000 poise to 12000 poise such that a difference between ?3 and ?2 ranges from 1000 poise to 5500 poise; and pumping the polyester melt from the second cooling zone into a zone for film-forming treatment.

Abstract: A continuous process for preparing a polyester shrinkable film includes: pumping an amorphous PET-based polyester melt having a melt viscosity ?1 directly from a polymerization reactor into a first cooling zone; cooling the polyester melt to increase the melt viscosity thereof to a melt viscosity ?2 such that a difference between ?2 and ?1 ranges from 1500 poise to 3500 poise; feeding the polyester melt into a second cooling zone; cooling the polyester melt to increase the melt viscosity thereof to a melt viscosity ?3 ranging from 5000 poise to 12000 poise such that a difference between ?3 and ?2 ranges from 1000 poise to 5500 poise; and pumping the polyester melt from the second cooling zone into a zone for film-forming treatment.

Abstract: The present invention discloses a heat adhesive biodegradable bicomponent fiber comprising a polylactic-acid-based low melting component and a high melting component, wherein the low melting component constitutes the sheath of the fiber, and the high melting component constitutes the core of the fiber. The material of the low melting component comprises unmodified polylactic acid or a blending with unmodified polylactic acid and modified polylactic acid. The modified polylactic acid is modified by blending unsaturated dicarboxylic acid, unsaturated anhydride or their derivatives with polylactic acid. The bicomponent fiber provided in this invention is biodegradable, environmentally benign and with excellent bonding performance to polylactic acid fibers, chemical fibers and cellulose fibers.

Abstract: The present invention discloses a heat adhesive biodegradable bicomponent fiber comprising a polylactic-acid-based low melting component and a high melting component, wherein the low melting component constitutes the sheath of the fiber, and the high melting component constitutes the core of the fiber. The material of the low melting component comprises unmodified polylactic acid or a blending with unmodified polylactic acid and modified polylactic acid. The modified polylactic acid is modified by blending unsaturated dicarboxylic acid, unsaturated anhydride or their derivatives with polylactic acid. The bicomponent fiber provided in this invention is biodegradable, environmentally benign and with excellent bonding performance to polylactic acid fibers, chemical fibers and cellulose fibers.