Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer.

Abstract: In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a rod structure formed on the epi layer. The rod structure includes a plurality of rods distanced from each other.

Abstract: In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a rod structure formed on the epi layer. The rod structure includes a plurality of rods distanced from each other.

Abstract: In one aspect of the present invention, a method of LED die-bonding includes coating the back side of an LED chip with a magnetic material, placing the LED chip in a packaging cup such that the back side of the LED chip is in contact with the bottom of the packaging cup, applying a magnetic field in a region near the bottom of the packaging cup so as to exert a magnetic force on the LED chip via the magnetic material coated on the back side of the LED chip, thereby holding the LED chip in place against the bottom of the packaging cup, while the magnetic field is applied, bonding one end of a first conductive wire to an anode of the LED and the other end of the first conductive wire to a first electrode, and bonding one end of a second conductive wire to a cathode of the LED and the other end of the second conductive wire to a second electrode, where the first electrode and the second electrode are attached to the packaging cup, and filling the packaging cup with an epoxy, and curing the epoxy.

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer.