Patents by Inventor Tsung-Kuei Kang

Tsung-Kuei Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making intermetal dielectrics (IMD) on semiconductor integrated circuits using low dielectric constant spin-on polymers
    Patent number: 6162583
    Abstract: The present invention is a method for making intermetal dielectrics (IMD) on integrated circuits using a low dielectric constant (low k) spin-on polymers without via hole poisoning. A patterned conductive layer is used to form metal interconnection for the integrated circuits. A IMD layer is then formed by depositing sequentially three IMD layers, IMD1, IMD2 and IMD3 respectively. The IMD1 is deposited first and is a low k polymer. IMD2 composed of silicon nitride (Si.sub.3 N.sub.4) and a thick IMD3 composed of silicon oxide (SiO.sub.2) is deposited next. The IMD3 is planarized, and a photoresist mask is used to pattern openings in IMD3 to form a hard mask for etching the remaining via holes in IMD2 and IMD3. The IMD2 layer protects the low k polymer (IMD1) from damage while plasma ashing in oxygen is used to removal the photoresist mask.
    Type: Grant
    Filed: March 20, 1998
    Date of Patent: December 19, 2000
    Assignee: Industrial Technology Research Institute
    Inventors: Tsung-Ju Yang, Chien-Mei Wang, Tsung-Kuei Kang