Patents by Inventor Tsung Liang Cheng

Tsung Liang Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
    Patent number: 7462505
    Abstract: In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.
    Type: Grant
    Filed: February 23, 2005
    Date of Patent: December 9, 2008
    Assignee: Tekcore Co., Ltd.
    Inventors: Chia Ming Lee, Tsung Liang Cheng, I Ling Chen, Yu Chuan Liu, Jen Inn Chyi