Abstract: A structure of accumulated type trench MOSFET in silicon carbide(SiC) and forming method are disclosed. The MOSFET includes a trench gate having a gate oxide layer, a polysilicon layer, a source region, and a drain region. The source region contains a p+ heavily doped region, an n+ heavily doped region and a p-base region, and a source contact metal layer. The p+ heavily doped region the n+ heavily doped region and the p-base region are abutting each other. The former two are extended to the front surface of the silicon carbide substrate having the source contact metal layer formed over and the latter one is beneath them. Moreover, the p-base region is separated from the trench by an accumulation channel. The drain contact metal layer is formed on the rear surface of the silicon carbide substrate where the rear region of the silicon carbide is heavily doped than the front region thereof.

Abstract: A structure of accumulated type trench MOSFET in silicon carbide(SiC) and forming method are disclosed. The MOSFET includes a trench gate having a gate oxide layer, a polysilicon layer, a source region, and a drain region. The source region contains a p+ heavily doped region, an n+ heavily doped region and a p-base region, and a source contact metal layer. The p+ heavily doped region the n+ heavily doped region and the p-base region are abutting each other. The former two are extended to the front surface of the silicon carbide substrate having the source contact metal layer formed over and the latter one is beneath them. Moreover, the p-base region is separated from the trench by an accumulation channel. The drain contact metal layer is formed on the rear surface of the silicon carbide substrate where the rear region of the silicon carbide is heavily doped than the front region thereof.

Abstract: The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint current reference signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.

Abstract: The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality reference elements are used for forming the reference current generator by applying one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. By means of the midpoint current reference signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.

Abstract: The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by using one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint reference current signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.

Abstract: A structure of accumulated type trench MOSFET in silicon carbide (SiC) and forming method are disclosed. The MOSFET includes a trench gate having a gate oxide layer, a polysilicon layer, a source region, and a drain region. The source region contains a p+ heavily doped region, an n+ heavily doped region and a p-base region, and a source contact metal layer. The p+ heavily doped region the n+ heavily doped region and the p-base region are abutting each other. The former two are extended to the front surface of the silicon carbide substrate having the source contact metal layer formed over and the latter one is beneath them. Moreover, the p-base region is separated from the trench by an accumulation channel. The drain contact metal layer is formed on the rear surface of the silicon carbide substrate where the rear region of the silicon carbide is heavily doped than the front region thereof.

Abstract: The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality reference elements are used for forming the reference current generator by applying one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. By means of the midpoint current reference signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.

Abstract: High density magnetic random access memory (MRAM) is disclosed. In the MRAM, by using the multi-layered magnetic materials with different resistance characteristics, the magnetic tunnel junction (MTJ) cells are connected in parallel or in series, which are connected to a transistor, so as to be a control element for reading data without complicated reading procedure and timing, resulting in high density package of MRAM.

Abstract: High density magnetic random access memory (MRAM) is disclosed. In the MRAM, by using the multi-layered magnetic materials with different resistance characteristics, the magnetic tunnel junction (MTJ) cells are connected in parallel or in series, which are conneted to a transistor, so as to be a control element for reading data without complicated reading procedure and timing, resulting in high density package of MRAM.

Abstract: Apparatus for controlling pulse density is disclosed herein. The aforementioned apparatus including the following devices: A comparator that is used to compare an input reference voltage and a feedback voltage signal. A math processing device that is used to add the difference between the feedback voltage signal and an analog duty command signal to the analog duty command signal. A shift register that is used to generate a shift timing signal. A weighted averaging device that is used to carry out the operation of the weighted averaging of the feedback voltage signal according to the shift timing signal. A sequential switching device that is used to generate a switch-timing control signal by decoding the feedback voltage signal. A rectifying device that is used to output power with zero-current-switching. The rectifying means is driven by the switch-timing control signal.

Abstract: A voltage transforming apparatus for receiving a system input voltage and generating a system output voltage is disclosed herein. The voltage transforming apparatus includes the following devices. Transforming device that is to generate module output voltage responsive to the rate of change of the magnetic flux induced by the system input voltage. The voltage transforming device including a first terminal having a first voltage and a second terminal having a second voltage. The first voltage is higher than the second voltage, and the output voltage of the voltage transforming device is generated responsive to the difference between the first voltage and the second voltage. The voltage transforming device is mechanically connected to prevent the movement. Coupling device for electrically coupling the voltage transforming device to form a serial connected voltage transforming device.

Abstract: The structure of a high voltage transformer is disclosed. The transformer structure has a magnetic core, a multi-layer printed circuit board (PCB), a conductor winding, a voltage doubling rectifier means, a magnetic means, a supporting means, and insulated oil. The multi-layer PCB has spiral coils used as a secondary winding. A conductor windings is used as a primary winding. The voltage doubling rectifier means includes an anode voltage doubling rectifier circuit and a cathode voltage doubling rectifier circuit which are respectively formed on a first and a second insulated boards. The two voltage doubling rectifier is used to increase the voltage gain. The magnetic means has a top magnetic cap and a bottom magnetic cap. The mullet-layer PCB and the voltage doubling rectifier means are interposed between the top and the bottom magnetic cap for decreasing the leakage magnetic flux. The breakdown distance can be maintained in an appropriate distance by using the supporting means.

Abstract: Voltage transforming apparatus for receiving a system input voltage and then generating a system output voltage is disclosed herein, the voltage transforming apparatus including the following devices: Planar voltage transforming device, which is used to generate a module output voltage responding to the rate of change of the magnetic flux. The magnetic flux is induced by the system input voltage. The planar voltage transforming device including a first terminal having a first voltage and a second terminal having a second voltage. The first voltage is higher than the second voltage, and the output voltage of the planar voltage transforming device is responding to the difference between the first voltage and the second voltage. Coupling device for electrically coupling the planar voltage transforming device. In addition, the summation of the output voltage of the planar voltage transforming device is equal to the system output voltage.