Patents by Inventor Tsung-Pei Chin

Tsung-Pei Chin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MULTI-JUNCTION SOLAR CELL STRUCTURE
    Publication number: 20110259387
    Abstract: A multi-junction solar cell structure includes a supporting substrate, a Group IV element-based thin film, and a Group III-V element-based thin film sequentially stacked on the supporting substrate. When the multi-junction solar cell structure is active, the Group III-V element-based thin film contacts the light before the Group IV element-based thin film does. The Group IV element-based thin film includes a first solar cell and the Group III-V element-based thin film includes a second solar cell, wherein the band gap of the first solar cell is lower than the band gap of the second solar cell.
    Type: Application
    Filed: April 21, 2011
    Publication date: October 27, 2011
    Applicant: SOLAPOINT CORPORATION
    Inventors: Chan Shin WU, Tsung-Pei CHIN, Yung-Yi TU
  • Low turn-on voltage, non-electron blocking double HBT structure
    Patent number: 7038256
    Abstract: A double heterojunction bipolar transistor structure having desirable properties of a low base-emitter turn-on voltage and no electron blocking discontinuities in the base-collector junction. These properties are achieved by selecting base, emitter and collector materials to provide a bandgap profile that exhibits abrupt transitions at the heterojunctions, such that both abrupt transitions are due to transitions in the valence band edge of the bandgap, but not in the conductive band edge of the bandgap.
    Type: Grant
    Filed: December 3, 2004
    Date of Patent: May 2, 2006
    Assignee: Northrop Grumman Corp.
    Inventors: Donald J. Sawdai, Augusto L. Gutierrez-Aitken, Tsung-Pei Chin
  • Fully relaxed channel HEMT device
    Patent number: 6710379
    Abstract: A HEMT device comprises a buffer layer disposed over a substrate. A partially-relaxed channel is disposed over the buffer layer and a barrier layer is disposed over the channel. A cap layer is disposed over the barrier layer and a gate is positioned on the barrier layer. A source and a drain are positioned on the barrier layer on opposite sides of the gate.
    Type: Grant
    Filed: February 4, 2003
    Date of Patent: March 23, 2004
    Assignee: Northrop Grumman Corporation
    Inventors: Michael Wojtowicz, Tsung-Pei Chin, Michael E. Barsky, Ronald W. Grundbacher
  • Partially relaxed channel HEMT device
    Publication number: 20030141519
    Abstract: A HEMT device comprises a buffer layer disposed over a substrate. A partially-relaxed channel is disposed over the buffer layer and a barrier layer is disposed over the channel. A cap layer is disposed over the barrier layer and a gate is positioned on the barrier layer. A source and a drain are positioned on the barrier layer on opposite sides of the gate.
    Type: Application
    Filed: February 4, 2003
    Publication date: July 31, 2003
    Applicant: TRW Inc.
    Inventors: Michael Wojtowicz, Tsung-Pei Chin, Michael E. Barsky, Ronald W. Grundbacher
  • Partially relaxed channel HEMT device
    Patent number: 6515316
    Abstract: A HEMT device comprises a buffer layer disposed over a substrate. A partially-relaxed channel is disposed over the buffer layer and a barrier layer is disposed over the channel. A cap layer is disposed over the barrier layer and a gate is positioned on the barrier layer. A source and a drain are positioned on the barrier layer on opposite sides of the gate.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: February 4, 2003
    Assignee: TRW Inc.
    Inventors: Michael Wojtowicz, Tsung-Pei Chin, Michael E. Barsky, Ronald W. Grundbacher