Patents by Inventor Tsung-Shiun Wu

Tsung-Shiun Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7341960
    Abstract: A method for making a MOS device includes: forming a titanium dioxide film on a semiconductor substrate; and subjecting the titanium dioxide film to a fluorine-containing ambient, and conducting passivation of grain boundary defects of the titanium dioxide film through reaction of fluorine and titanium dangling bonds in the titanium dioxide film.
    Type: Grant
    Filed: November 10, 2005
    Date of Patent: March 11, 2008
    Assignee: National Sun Yat-Sen University
    Inventors: Ming-Kwei Lee, Jung-Jie Huang, Chih-Feng Yen, Tsung-Shiun Wu
  • Publication number: 20070102732
    Abstract: A MOS device includes: a semiconductor substrate; an insulator layer formed on the semiconductor substrate, and including a fluorine-containing titanium dioxide film that has grain boundary defects passivated by fluorine; and upper and lower electrodes formed on the insulator layer and the semiconductor substrate, respectively.
    Type: Application
    Filed: November 10, 2005
    Publication date: May 10, 2007
    Inventors: Ming-Kwei Lee, Jung-Jie Huang, Tsung-Shiun Wu, Chih-Feng Yen
  • Publication number: 20070105399
    Abstract: A method for making a MOS device includes: forming a titanium dioxide film on a semiconductor substrate; and subjecting the titanium dioxide film to a fluorine-containing ambient, and conducting passivation of grain boundary defects of the titanium dioxide film through reaction of fluorine and titanium dangling bonds in the titanium dioxide film.
    Type: Application
    Filed: November 10, 2005
    Publication date: May 10, 2007
    Inventors: Ming-Kwei Lee, Jung-Jie Huang, Chih-Feng Yen, Tsung-Shiun Wu