Abstract: A texture inducing structure for alloy films is provided. The texture inducing structure includes a substrate, a texture-inducing layer and a deposition layer. The texture-inducing layer is formed on the substrate. The texture-inducing layer has an intrinsically strong crystalline texture, a texture coefficient of the texture-inducing layer is greater than 2, and a thickness of the texture-inducing layer is ranged from 0.1 ?m to 6 ?m. The deposition layer is formed on the texture-inducing layer. A texture of the deposition layer is induced by the texture-inducing layer thereby changing the magnetic anisotropy and the magnetic strength of the deposition layer, a thickness of the deposition layer is ranged from 1 ?m˜60 ?m, and the thickness of the deposition layer is greater than that of the texture-inducing layer.

Abstract: An absolute position readout apparatus includes an encoder device and a readout device. The readout device includes multiple first and second magnetic sensing components that correspond to an absolute track of the encoder device, and a third magnetic sensing component and a fourth magnetic sensing components that correspond to an incremental track of the encoder device. The third magnetic sensing component is configured to be spaced apart from the fourth magnetic sensing component by a specific distance, so as to prevent misreading of absolute position information from the first or second magnetic sensing components being at positions corresponding to boundaries between adjacent magnetized regions of the absolute track.

Abstract: An absolute position readout apparatus includes an encoder device and a readout device. The readout device includes multiple first and second magnetic sensing components that correspond to an absolute track of the encoder device, and a third magnetic sensing component and a fourth magnetic sensing components that correspond to an incremental track of the encoder device. The third magnetic sensing component is configured to be spaced apart from the fourth magnetic sensing component by a specific distance, so as to prevent misreading of absolute position information from the first or second magnetic sensing components being at positions corresponding to boundaries between adjacent magnetized regions of the absolute track.

Abstract: A texture inducing structure for alloy films is provided. The texture inducing structure includes a substrate, a texture-inducing layer and a deposition layer. The texture-inducing layer is formed on the substrate. The texture-inducing layer has an intrinsically strong crystalline texture, a texture coefficient of the texture-inducing layer is greater than 2, and a thickness of the texture-inducing layer is ranged from 0.1 ?m to 6 ?m. The deposition layer is formed on the texture-inducing layer. A texture of the deposition layer is induced by the texture-inducing layer thereby changing the magnetic anisotropy and the magnetic strength of the deposition layer, a thickness of the deposition layer is ranged from 1 ?m˜60 ?m, and the thickness of the deposition layer is greater than that of the texture-inducing layer.

Abstract: An absolute position detecting device and method are provided. The absolute position detecting device utilizes the incremental magnetization on a magnetic encoding ruler with two different pole widths, such that elliptical Lissajous curves may be obtained by magnetoresistive sensors. The absolute position may be obtained by determining the region of the signals on the ellipses read by the magnetoresistive sensors.

Abstract: An absolute position detecting device and method are provided. The absolute position detecting device utilizes the incremental magnetization on a magnetic encoding ruler with two different pole widths, such that elliptical Lissajous curves may be obtained by magnetoresistive sensors. The absolute position may be obtained by determining the region of the signals on the ellipses read by the magnetoresistive sensors.

Abstract: The present invention relates to a phase-change memory device structure and the materials used. The structure comprises a substrate, a single or multiple sandwich-memory-unit(s), a first electrode, and a second electrode. The sandwich-memory-unit contains an upper barrier layer, a lower barrier layer, and a memory layer therebetween. The thickness of the memory-layer is less than 30 nm. The present invention provides a phase-change memory device with a high Tc and a low volume changing rate during phase-change.

Abstract: A multi-slot resonant microwave device comprises a plurality of slot microwave resonator units and at least one microwave emitting source. Each of the plurality of slot microwave resonator unit is defined as a slot resonant cavity. Whenever at least one of the microwave emitting sources emits microwave power into the plurality of slot microwave resonator units, the plurality of slot microwave resonator units resonate simultaneously, and produce an electromagnetic field with the same polarization direction. Therefore, the multi-slot resonator device can deal with large-area microwave heating with greater microwave effect to shorten operating time and accomplish the objective of homogeneous and megathermal microwave heating.

Abstract: The invention discloses a phase-change memory device structure and the materials used. The structure includes a substrate; a single or multiple sandwich-memory-unit(s); a first and a second electrode electrically connecting to the first and the second sides of the sandwich-memory-units and a dielectric layer used as the insulator required by the memory device. The sandwich-memory-unit composes of a memory-layer, thinner than 30 nm, sandwiched between an upper and a lower barrier-layers. The barrier-layer is either an electrical conductor in case of vertical memory-cells or an electrical insulator in case of parallel memory-cells. The sandwich-memory-unit is characteristic of increased crystallization temperature of at least 50° C. as the thickness of the memory-layer is reduced from 15 to 5 nm; and the volume change of the memory-layer is less than 3% during phase change. The thickness and memory-material in each sandwich-memory-unit can be different in the multiple sandwich-memory-units.

Abstract: A multi-slot resonant microwave device comprises a plurality of slot microwave resonator units and at least one microwave emitting source. Each of the plurality of slot microwave resonator unit is defined as a slot resonant cavity. Whenever at least one of the microwave emitting sources emits microwave power into the plurality of slot microwave resonator units, the plurality of slot microwave resonator units resonate simultaneously, and produce an electromagnetic field with the same polarization direction. Therefore, the multi-slot resonator device can deal with large-area microwave heating with greater microwave effect to shorten operating time and accomplish the objective of homogeneous and megathermal microwave heating.

Abstract: A method is developed to crystallize amorphous silicon (a-Si) thin films, in cold environment, by combining microwave-absorbing materials (MAM) and microwave irradiation. The MAM is set on top or around of the a-Si thin film. MAM composes of dielectric, magnetic, semiconductor, ferroelectric and carbonaceous material oxides, carbides, nitrides and borides, which will absorb and concentrate electric or magnetic field of the microwave. The microwave frequency is selected from 1 to 50 GHz, at a power density not less than 5 W/cm2. Temperature rise of the MAM is monitored and controlled by an optical pyrometer to be less than 600° C., and better be within 400-500° C. The application of MAM at patterned local areas leads to localized heating and crystallization of a-Si film right at the patterns to facilitate manufacture of semiconductor devices.

Abstract: A phase change material comprising a quaternary GaTeSb material consisting essentially of MA(GaxTeySbz)B, and where M comprises a group IVA element C, Si, Ge, Sn, Pb, a group VA element N, P, As, Sb, Bi, or a group VIA element O, S, Se, Te, Po, having a value A such that the transition temperature is increased relative to the transition temperature in GaxTeySbz, without M, and the difference between the melting temperature and the transition temperature is reduced relative to the difference in GaxTeySbz, without M.

Abstract: A eutectic memory includes a eutectic memory material layer, a top and a bottom electrodes, or a left and a right electrodes. Materials of the eutectic memory layer are represented by M1-M2-X wherein the M1 is a semiconductor element, the M2 is a metallic element which forms eutectic with the M1, and the X is an unavoidable impurity or an added element.

Abstract: A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second electrode electrically connecting a second side of the phase change layer, wherein the phase change layer composes mainly of gallium (Ga), antimony (Sb) and tellurium (Te) and unavoidable impurities, having the composition range of GaxTeySbz, 5<x<40; 8?y<48; 42<z<80; and x+y+z=100.

Abstract: The present invention provides a sheet anode based on modified zinc-aluminum alloys and Zinc-Air batteries containing the same. The sheet anode is consisted of ZnxAlyMz, wherein M comprises an element selected from the group consisting of alkaline metal and alkaline earth metal, or its further combination with at least one of Mn, Si and Cu; x, y and z each represents the weight percent of Zn, Al and M, and x+y+z=100; 2<y<50; and 0.5<z<6. The present invention also provides a sheet anode prepared from scrapped aluminum alloys, scrapped magnesium alloys, or scrapped zinc alloys, and the said sheet anode can be further made to be porous before use by proper etching.

Abstract: A metallic material coated with a carbon film is provided. The coated metallic material comprises a metal substrate and a carbon film, wherein the carbon film includes an amorphous phase and a graphite-like phase, and in some embodiments an extra diffusion layer onto the metal substrate underneath the carbon film. The carbon film can be a single layer comprising of two carbon phases, amorphous carbon as the matrix and embedded graphite-like granules. The carbon film can also be multilayers with alternate amorphous carbon film and graphite-like carbon film.

Abstract: Diffusion barrier layer is required during copper metallization in IC processing to prevent Cu from diffusion into the contacting silicon material and reacting to form copper silicide, which consumes Cu and deteriorates electrical conduction. With decreasing feature sizes of IC devices, such as those smaller than 90 nano-meter (nm), the thickness of diffusion barrier layer must be thinner than 10 nm. For example, a thickness of 2 nm will be called for at the feature size 27 nm. Disclosed in the present invention is ultra-thin barrier materials and structures based on tantalum silicon carbide, and its composite with another metallic layer Ru film. The retarding temperature, by which no evidence of copper diffusion can be identified, is 600˜850° C. depending on thickness, composition and film structure, at a thickness 1.6˜5 nm.

Abstract: A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second electrode electrically connecting a second side of the phase change layer, wherein the phase change layer composes mainly of gallium (Ga), antimony (Sb) and tellurium (Te) and unavoidable impurities, having the composition range of GaxTeySbz, 5<x<40; 8?y<48; 42<x<80; and x+y+z=100.

Abstract: This invention discloses a novel rewritable phase-change recording medium for optical data storage, which is based on the GaSbTe ternary alloy system. The designed compositions reside on the Sb7Te3—GaSb and Sb2Te3—GaSb pseudo-binary tielines, and the claimed region can be expressed by the formula (SbxTe100-x)1-z(GaySb100-y)z, 35?x?80, 40?y?50, 0.05?z?0.9. The crystallized phase of the GaSbTe films is a single phase after laser annealing, and the crystal structure is hexagonal with continuous variation in lattice constants. The lattice parameters, a is from 4.255 ? to 4.313 ? and c is from 11.200 ? to 11.657 ?, corresponding to the c/a ratio 2.60 to 2.73. The crystallization kinetics shows increased crystallization temperature (181 to 327° C.) and activation energy (2.8 to 6.5 eV) with increasing GaSb content.

Abstract: The present invention provides a sheet anode based on modified zinc-aluminum alloys and Zinc-Air batteries containing the same. The sheet anode is consisted of ZnxAlyMz, wherein M comprises an element selected from the group consisting of alkaline metal and alkaline earth metal, or its further combination with at least one of Mn, Si and Cu; x, y and z each represents the weight percent of Zn, Al and M, and x +y+z=100; 2<y<50; and 0.5<z<6. The present invention also provides a sheet anode prepared from scrapped aluminum alloys, scrapped magnesium alloys, or scrapped zinc alloys, and the said sheet anode can be further made to be porous before use by proper etching.