Abstract: A method for electroplated metal annealing process. First, a semiconductor structure is provided, wherein the semiconductor structure has a plurality of semiconductor components, such as a gate electrode, a source region and a drain region, and a field oxide region. Second, a dielectric layer is formed over the semiconductor structure, and a via which exposes a part of the semiconductor structure is formed in the dielectric layer by the use of conventional lithographic and etching processes and an electroplated metal layer is formed over the dielectric layer; meanwhile, the via is filled with the electroplated metal layer. The electroplated metal layer is then annealed by a NH3 plasma process performed by plasma enhanced chemical vapor deposition (PECVD).

Abstract: A method for improving the coating capability of low dielectric layer is disclosed. The method includes steps of an etching stop layer is deposited a semiconductor substrate, an adhesion promoter layer is spun-on the etching stop layer. The pre-wetting process being performed on the adhesion promoter layer to enhance the coating capability of the low-k dielectric layer, and thus improve the coating quality through the pre-wetting process of baked adhesion promoter layer before the low-k dielectric layer is applied.

Abstract: A method for electroplated metal annealing process. First, a semiconductor structure is provided, wherein the semiconductor structure have a plurality semiconductor components, such as a gate electrode, a source region and a drain region, and a field oxide region. Second, a dielectric layer is formed over the semiconductor structure, and a via which exposes a part of the semiconductor structure is formed in the dielectric layer by the use of the conventional lithographic and etching process, and an electroplated metal layer is formed over the dielectric layer; meanwhile, the via is filled with the electroplated metal layer. The electroplated metal layer then is annealed by a NH3 plasma process performed by plasma enhanced chemical vapor deposition (PECVD).

Abstract: A fabrication method for a low dielectric constant (k) material layer is described. A high molecular weight material layer is formed on a substrate. The high molecular weight material layer is then cured. A bonding material layer is formed on the high molecular weight material layer, wherein a major component in the bonding material layer is an organic compound, wherein the organic compound has a silicon-containing moiety and an unsaturated hydrocarbon moiety. The bonding material layer is further cured, allowing the organic silicon compound to cross-link within the high molecular weight material layer to form a high molecular weight material layer with a silicon rich surface. Moreover, the curing for the high molecular weight material layer and for the bonding material layer can conduct concurrently.

Abstract: A method for improving the coating capability of low dielectric layer is disclosed. The method includes steps of an etching stop layer is deposited a semiconductor substrate, an adhesion promoter layer is spun-on the etching stop layer. The pre-wetting process being performed on the adhesion promoter layer to enhance the coating capability of the low-k dielectric layer, and thus improve the coating quality through the pre-wetting process of baked adhesion promoter layer before the low-k dielectric layer is applied.

Abstract: A method of coating an organic polymeric low-k dielectric layer starts by depositing a protective layer composed of silicon nitride (SiN) or silicon carbide (SiC) on a substrate. Ahydrophilic surface is produced across a top surface of the protective layer by performing a fast surface treatment that subjects the surface to an oxygen-containing plasma at a pre-selected low radio frequency power. An adhesion promoter coating layer is formed over the top surface of the protective layer. The coating layer has promoter molecules, each promoter molecule having at least one hydrophobic group and one hydrophilic group. The low-k dielectric layer is spin-on coated onto the coating layer. Formation of the hydrophilic surface alters an orientation of the adhesion promoter molecules to facilitate the hydrophilic group of each of the adhesion promoter molecules facing the hydrophilic surface while the hydrophobic group of the adhesion promoter molecules faces the low-k dielectric layer.

Abstract: A method of coating an organic polymeric low-k dielectric layer starts by depositing a protective layer composed of silicon nitride (SiN) or silicon carbide (SiC) on a substrate. A hydrophilic surface is produced across a top surface of the protective layer by performing a fast surface treatment that subjects the surface to an oxygen-containing plasma at a pre-selected low radio frequency power. An adhesion promoter coating layer is formed over the top surface of the protective layer. The coating layer has promoter molecules, each promoter molecule having at least one hydrophobic group and one hydrophilic group. The low-k dielectric layer is spin-on coated onto the coating layer. Formation of the hydrophilic surface alters an orientation of the adhesion promoter molecules to facilitate the hydrophilic group of each of the adhesion promoter molecules facing the hydrophilic surface while the hydrophobic group of the adhesion promoter molecules faces the low-k dielectric layer.