Patents by Inventor Tsung-Tang TSAI

Tsung-Tang TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12249583
    Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.
    Type: Grant
    Filed: August 15, 2023
    Date of Patent: March 11, 2025
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Min Lung Huang, Huang-Hsien Chang, Tsung-Tang Tsai, Ching-Ju Chen
  • Patent number: 12216157
    Abstract: A package structure and a testing method are provided. The package structure includes a wiring structure, a first electronic device and a second electronic device. The wiring structure includes at least one dielectric layer, at least one conductive circuit layer in contact with the dielectric layer, and at least one test circuit structure in contact with the dielectric layer. The test circuit structure is disposed adjacent to the interconnection portion of the conductive circuit layer. The first electronic device is electrically connected to the wiring structure. The second electronic device is electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the interconnection portion of the conductive circuit layer.
    Type: Grant
    Filed: August 22, 2023
    Date of Patent: February 4, 2025
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chen-Chao Wang, Tsung-Tang Tsai, Chih-Yi Huang
  • Patent number: 12040261
    Abstract: A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: July 16, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Tsung-Tang Tsai, Huang-Hsien Chang, Ching-Ju Chen
  • Patent number: 11894340
    Abstract: A package structure includes a wiring structure and a first electronic device. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The first electronic device is electrically connected to the wiring structure, and has a first surface, a second surface and at least one lateral side surface extending between the first surface and the second surface. The first electronic device includes a first active circuit region and a first protrusion portion. The first protrusion portion protrudes from the at least one lateral side surface of the first electronic device. A portion of the first active circuit region is disposed in the first protrusion portion.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: February 6, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Min Lung Huang, Huang-Hsien Chang, Tsung-Tang Tsai, Ching-Ju Chen
  • Publication number: 20240021540
    Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.
    Type: Application
    Filed: August 15, 2023
    Publication date: January 18, 2024
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Min Lung HUANG, Huang-Hsien CHANG, Tsung-Tang TSAI, Ching-Ju CHEN
  • Publication number: 20230393194
    Abstract: A package structure and a testing method are provided. The package structure includes a wiring structure, a first electronic device and a second electronic device. The wiring structure includes at least one dielectric layer, at least one conductive circuit layer in contact with the dielectric layer, and at least one test circuit structure in contact with the dielectric layer. The test circuit structure is disposed adjacent to the interconnection portion of the conductive circuit layer. The first electronic device is electrically connected to the wiring structure. The second electronic device is electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the interconnection portion of the conductive circuit layer.
    Type: Application
    Filed: August 22, 2023
    Publication date: December 7, 2023
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chen-Chao WANG, Tsung-Tang TSAI, Chih-Yi HUANG
  • Patent number: 11733294
    Abstract: A package structure and a testing method are provided. The package structure includes a wiring structure, a first electronic device and a second electronic device. The wiring structure includes at least one dielectric layer, at least one conductive circuit layer in contact with the dielectric layer, and at least one test circuit structure in contact with the dielectric layer. The test circuit structure is disposed adjacent to the interconnection portion of the conductive circuit layer. The first electronic device is electrically connected to the wiring structure. The second electronic device is electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the interconnection portion of the conductive circuit layer.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: August 22, 2023
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chen-Chao Wang, Tsung-Tang Tsai, Chih-Yi Huang
  • Patent number: 11728282
    Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: August 15, 2023
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Min Lung Huang, Huang-Hsien Chang, Tsung-Tang Tsai, Ching-Ju Chen
  • Patent number: 11631734
    Abstract: A vertical capacitor structure includes a substrate, at least a pillar, a first conductive layer, a first dielectric layer and a second conductive layer. The substrate defines a cavity. The pillar is disposed in the cavity. The first conductive layer covers and is conformal to the cavity of the substrate and the pillar, and is insulated from the substrate. The first dielectric layer covers and is conformal to the first conductive layer. The second conductive layer covers and is conformal to the first dielectric layer. The first conductive layer, the first dielectric layer and the second conductive layer jointly form a capacitor component.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: April 18, 2023
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Huang-Hsien Chang, Tsung-Tang Tsai, Hung-Jung Tu
  • Patent number: 11428946
    Abstract: According to various embodiments, a collimator includes a substrate defining a plurality of channels through the substrate. The substrate includes a first surface and a second surface opposite the first surface. Each of the channels includes a first aperture exposed from the first surface, a second aperture between the first surface and the second surface, and a third aperture exposed from the second surface. The first aperture and the third aperture are larger than the second aperture.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: August 30, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Yuan-Feng Chiang, Tsung-Tang Tsai, Min Lung Huang
  • Publication number: 20220223507
    Abstract: A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.
    Type: Application
    Filed: March 29, 2022
    Publication date: July 14, 2022
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Tsung-Tang TSAI, Huang-Hsien CHANG, Ching-Ju CHEN
  • Patent number: 11289411
    Abstract: A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: March 29, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Tsung-Tang Tsai, Huang-Hsien Chang, Ching-Ju Chen
  • Patent number: 11257742
    Abstract: A wiring structure includes a conductive structure and at least one conductive through via. The conductive structure includes a plurality of dielectric layers, a plurality of circuit layers in contact with the dielectric layers, and a plurality of dam portions in contact with the dielectric layers. The dam portions are stacked on and contact one another. The conductive through via extends through the dam portions.
    Type: Grant
    Filed: July 2, 2020
    Date of Patent: February 22, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Tsung-Tang Tsai
  • Publication number: 20220005756
    Abstract: A wiring structure includes a conductive structure and at least one conductive through via. The conductive structure includes a plurality of dielectric layers, a plurality of circuit layers in contact with the dielectric layers, and a plurality of dam portions in contact with the dielectric layers. The dam portions are stacked on and contact one another. The conductive through via extends through the dam portions.
    Type: Application
    Filed: July 2, 2020
    Publication date: January 6, 2022
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Tsung-Tang TSAI
  • Publication number: 20210278457
    Abstract: A package structure and a testing method are provided. The package structure includes a wiring structure, a first electronic device and a second electronic device. The wiring structure includes at least one dielectric layer, at least one conductive circuit layer in contact with the dielectric layer, and at least one test circuit structure in contact with the dielectric layer. The test circuit structure is disposed adjacent to the interconnection portion of the conductive circuit layer. The first electronic device is electrically connected to the wiring structure. The second electronic device is electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the interconnection portion of the conductive circuit layer.
    Type: Application
    Filed: March 6, 2020
    Publication date: September 9, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chen-Chao WANG, Tsung-Tang TSAI, Chih-Yi HUANG
  • Publication number: 20210233836
    Abstract: A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.
    Type: Application
    Filed: July 29, 2020
    Publication date: July 29, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Tsung-Tang TSAI, Huang-Hsien CHANG, Ching-Ju CHEN
  • Publication number: 20210151407
    Abstract: A package structure includes a wiring structure and a first electronic device. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The first electronic device is electrically connected to the wiring structure, and has a first surface, a second surface and at least one lateral side surface extending between the first surface and the second surface. The first electronic device includes a first active circuit region and a first protrusion portion. The first protrusion portion protrudes from the at least one lateral side surface of the first electronic device. A portion of the first active circuit region is disposed in the first protrusion portion.
    Type: Application
    Filed: November 15, 2019
    Publication date: May 20, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Min Lung HUANG, Huang-Hsien CHANG, Tsung-Tang TSAI, Ching-Ju CHEN
  • Publication number: 20210118812
    Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.
    Type: Application
    Filed: October 17, 2019
    Publication date: April 22, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Min Lung HUANG, Huang-Hsien CHANG, Tsung-Tang TSAI, Ching-Ju CHEN
  • Publication number: 20210104595
    Abstract: A vertical capacitor structure includes a substrate, at least a pillar, a first conductive layer, a first dielectric layer and a second conductive layer. The substrate defines a cavity. The pillar is disposed in the cavity. The first conductive layer covers and is conformal to the cavity of the substrate and the pillar, and is insulated from the substrate. The first dielectric layer covers and is conformal to the first conductive layer. The second conductive layer covers and is conformal to the first dielectric layer. The first conductive layer, the first dielectric layer and the second conductive layer jointly form a capacitor component.
    Type: Application
    Filed: November 23, 2020
    Publication date: April 8, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Syu-Tang LIU, Huang-Hsien CHANG, Tsung-Tang TSAI, Hung-Jung TU
  • Patent number: 10847602
    Abstract: A vertical capacitor structure includes a substrate, at least a pillar, a first conductive layer, a first dielectric layer and a second conductive layer. The substrate defines a cavity. The pillar is disposed in the cavity. The first conductive layer covers and is conformal to the cavity of the substrate and the pillar, and is insulated from the substrate. The first dielectric layer covers and is conformal to the first conductive layer. The second conductive layer covers and is conformal to the first dielectric layer. The first conductive layer, the first dielectric layer and the second conductive layer jointly form a capacitor component.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: November 24, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Syu-Tang Liu, Huang-Hsien Chang, Tsung-Tang Tsai, Hung-Jung Tu