Abstract: A nail drive device of electric nail gun includes a nailing rod and a rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator includes a stator and a rotor surrounding it, between the stator and the rotor, even groups of electro-magnetic mutual action components are configured in pairs, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by the specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified.

Abstract: An air-path structure of a pneumatic nail gun includes a main chamber formed in a gun body, a piston driving chamber and a timekeeping chamber that continuously releases pressurized air to the outside. The gun body is equipped with a trigger valve and a bar valve, and a security chamber and an auxiliary chamber are formed in the trigger valve; the trigger valve controls the pressurized air in the piston driving chamber to be discharged to the outside; and the bar valve controls the pressurized air in the main chamber to go into the piston driving chamber, the timekeeping chamber and the auxiliary chamber. The security chamber is permanently connected to the main chamber for concentrating upon the pressurized air, and the bar valve controls the pressurized air in the main chamber to be discharged into the timekeeping chamber, so as to improve the safety of pneumatic nail gun when used.

Abstract: The present disclosure relates to a semiconductor device with an air gap below a landing pad and a method for forming the semiconductor device. The semiconductor device includes a first lower plug and a second lower plug disposed over a semiconductor substrate. The semiconductor device also includes a first landing pad disposed over a top surface and upper sidewalls of the first lower plug, and a first upper plug disposed over the first landing pad and electrically connected to the first lower plug. A width of the first lower plug is greater than a width of the first upper plug. The semiconductor device further includes a dielectric layer disposed over the semiconductor substrate. The first lower plug, the second lower plug, the first landing pad and the first upper plug are disposed in the dielectric layer, and the dielectric layer includes an air gap disposed between the first lower plug and the second lower plug.

Abstract: A metal structure includes a patterned molybdenum tantalum oxide layer and a patterned metal layer. The patterned molybdenum tantalum oxide layer is disposed on a first substrate, in which the patterned molybdenum tantalum oxide layer includes about 2 to 12 atomic percent of tantalum. Both of an atomic percent of molybdenum and an atomic percent of oxygen of the patterned molybdenum tantalum oxide layer are greater than the atomic percent of tantalum of the patterned molybdenum tantalum oxide layer. The patterned metal layer is disposed on the patterned molybdenum tantalum oxide layer.

Abstract: The present disclosure provides a semiconductor device with an air gap between gate-all-around (GAA) transistors and a method for forming the semiconductor device. The semiconductor device includes a first gate stack and a second gate stack disposed over a semiconductor substrate. At least one of the first gate stack and the second gate stack includes a plurality of gate layers, and the first gate stack and the second gate stack have an air gap therebetween. The semiconductor device also includes a first gate structure and a second gate structure disposed over the first gate stack and the second gate stack, respectively, and a first dielectric layer surrounds lower sidewalls of the first gate structure and lower sidewalls of the second gate structure. A width of the first gate structure is greater than a width of the first plug.

Abstract: A method of making an all-zirconium one-piece dental implant has: oral scanning after implantation of artificial tooth roots, 3D archiving, making temporary dentures, and making integrated permanent dentures. The oral scanning is executed by an optical scanner and generates a digital file of a denture model, a five-axis processing machine makes a temporary denture according to the digital file of the denture model to provide fitting information to modify the digital file of the denture model or make a permanent denture. Making the permanent denture with an all-zirconium material without metal support comprises the five-axis processing machine forming a through hole in the permanent denture.

Abstract: An air-path structure of pneumatic a nail gun, formed inside a gun body containing high-pressure air, comprises a main air chamber, a firing valve air chamber and a time-delayed air chamber that continuously releases the high-pressure air to the atmosphere. The gun body is configured with a trigger valve and a slider valve. The inside of the trigger valve is formed with a safety-on air chamber and a safety-off air chamber. The trigger valve controls the high-pressure air inside the firing valve air chamber to be discharged to the atmosphere. The slider valve controls the high-pressure air inside the main air chamber flowing toward the firing valve air chamber, the time-delayed air chamber and the safety-off air chamber. Specifically, the safety-on air chamber is constantly communicated with the main air chamber and constantly contains high-pressure air, and the slider valve can control the high-pressure air inside the safety-off air chamber flowing into the time-delayed air chamber.

Abstract: The provided articles and methods use a non-woven fibrous web containing 60-100 wt % of oxidized polyacrylonitrile fibers; and 0-40 wt % of reinforcing fibers having outer surfaces comprised of a polymer with a melting temperature of from 100° C. to 300° C. The non-woven fibrous web has an average bulk density of from 15 kg/m3 to 50 kg/m3, with the plurality of fibers substantially entangled along directions perpendicular to a major surface of the non-woven fibrous web. Optionally, the oxidized polyacrylonitrile fibers can have a crimped configuration. Advantageously, these articles can display a combination of low thermal conductivity, high tensile strength, and flame resistance.

Abstract: An optical time domain reflector structure and the optical assembly is disclosed in the present invention. The optical assembly comprise an optical time domain reflector structure, a light guiding module and an optical transceiver sub-module. By disposing the optical time domain reflector structure in the optical transceiver sub-module can reduce the overall space. The optical signals emitted from the light guiding module can be reflected back to the optical fiber by the disposing of the reflection filter of the optical time domain reflector structure. Due to the two different radius of curvature of the first reflection surface and the second reflection surface of the reflection filter, the required optical signal can be completely refocused to return to the optical fiber, so that the intensity loss of the optical signals can also be reduced.

Abstract: The present disclosure provides a semiconductor device with an air gap between gate-all-around (GAA) transistors and a method for forming the semiconductor device. The semiconductor device includes a first gate stack and a second gate stack disposed over a semiconductor substrate. At least one of the first gate stack and the second gate stack includes a plurality of gate layers, and the first gate stack and the second gate stack have an air gap therebetween. The semiconductor device also includes a first gate structure and a second gate structure disposed over the first gate stack and the second gate stack, respectively, and a first dielectric layer surrounds lower sidewalls of the first gate structure and lower sidewalls of the second gate structure. A width of the first gate structure is greater than a width of the first plug.

Abstract: The present application discloses a semiconductor device having a landing pad with spacers and a method for fabricating the semiconductor device. The semiconductor device includes a first insulating layer, a second insulating layer, a conductive pillar and spacers. The first insulating layer is disposed on a substrate. The second insulating layer is disposed on the first insulating layer. The conductive pillars are disposed in the first insulating layer and penetrates through the second insulating layer. The spacers are disposed on sidewalls of the conductive pillars.

Abstract: The present invention is a touch panel with a heater for enhancing the bonding of optical adhesive, which comprises a cover lens and a sensing substrate mutually bonded by optical adhesive, wherein at least one heating electrode is configured on the other side of the sensing substrate. The heating electrode is formed by printing an opaque conductive material with a plurality of openings formed thereon and through which light is allowed to pass. When ultraviolet light is irradiating from one side of the heating electrode to the direction of the cover lens, the ultraviolet light can penetrate the optical adhesives through the openings on the heating electrode, so that the optical adhesives are effectively cured by the irradiation, and the bonding strength between the cover lens and the sensing substrate is improved.

Abstract: High-voltage semiconductor device and method of forming the same, the high-voltage semiconductor device includes a substrate, a gate structure, a drain, a first insulating structure and a drain doped region. The gate structure is disposed on the substrate. The drain is disposed in the substrate, at one side of the gate structure. The first insulating structure is disposed on the substrate, under the gate structure to partially overlap with the gate structure. The drain doped region is disposed in the substrate, under the drain and the first insulating structure, and the drain doped region includes a discontinuous bottom surface.

Abstract: A heat dissipation base is suitable for a transistor outline packaged laser diode. The heat dissipation base includes a basal wall and a heat dissipation wall extending outward from one side of the basal wall, the side surface of the basal wall defines a can-shaped packaging area. The heat dissipation wall is located in the packaging area and has a bearing surface. The heat dissipation base further includes an extension wall extending outward from the other side of the basal wall, the basal wall, the heat dissipation wall, and the extension wall are integrated, and the extension wall includes a primary cooling surface for in contact with an external heat dissipation element. The present invention also provides a transistor outline packaged laser diode using the above-mentioned heat dissipation base.

Abstract: An achromatic optical subassembly is suitable for connecting with an optical fiber. The achromatic optical subassembly includes a light-emitting unit, a light guide unit and an achromatic unit. The light-emitting includes a light source with broad spectral width used for optical fiber, wherein the spectral width of the light source with broad spectral width is at least greater than 30 nm. The light guide unit is disposed opposite the light-emitting unit and includes a ferrule for the optical fiber to pass through. The achromatic unit is disposed between the light-emitting unit and the guide unit, wherein the light source with broad spectral width passes through the achromatic unit, after which the different wavelengths of the light source with broad spectral width traveling along the respective optical paths are brought to the same focus and incident on the optical fiber in the light guide unit.

Abstract: Orthokeratology lens that uses aspheric E value to control tear height to sloe down the growth rate of the eyeball. The lens includes treat treatment zone through which light passes to image at retina of eyeball and positioning zone of non-visual area outside treatment zone. The treatment zone includes base curve and reverse curve formed on outside of base curve. The positioning zone includes alignment curve and peripheral curve located outside alignment curve, Center point is formed in center of base curve, junction of base curve and reverse curve forms first point of intersection, junction of reverse curve and alignment curve forms second point of intersection, and junction of alignment curve and peripheral curve forms third point of intersection. Linear distance between center point and cornea of preset eyeball is between 9 ?m and 21 ?m, Linear distance between first point of intersection and cornea of preset eyeball is between 89 ?m and 1189 ?m.

Abstract: The present invention provides a pneumatic hand tool with adjustable operating angle, comprising a grip body and a tool head body interconnected with each other. The grip body has a grip flow channel, and said tool head body has a tool head flow channel. The grip body and said tool head body are interconnected through two rotary joint faces to form a joint portion capable of adjustment of the operating angle. The two rotary joint faces respectively have connecting areas for uniform circumferential motion and high pressure air ports configured along the rotation center. And the two rotary joint faces are inclined to facilitate adjustment of the operating angle of said tool head, and to ensure good air tightness of the high pressure air ports inside the joint portion.

Abstract: A flame retardant foam. The flame retardant foam includes a from 25 to 75 wt % polyvinyl alcohol foam; and a from 25 to 95 wt % fire retardant coated on the polyvinyl alcohol foam, wherein the fire retardant comprises ammonium polyphosphate or sodium metasilicate; wherein the thickness of the foam is from 2 mm to 1 cm.

Abstract: High-voltage semiconductor device and method of forming the same, the high-voltage semiconductor device includes a substrate, a gate structure, a drain, a first insulating structure and a drain doped region. The gate structure is disposed on the substrate. The drain is disposed in the substrate, at one side of the gate structure. The first insulating structure is disposed on the substrate, under the gate structure to partially overlap with the gate structure. The drain doped region is disposed in the substrate, under the drain and the first insulating structure, and the drain doped region includes a discontinuous bottom surface.

Abstract: A nonwoven fibrous web includes a flame retardant nonwoven fabric coated with a fire retardant, wherein the fire retardant comprises ammonium polyphosphate or alkali metal silicate; and wherein the flame retardant nonwoven fabric has a first major surface and an opposed second major surface; a first nonwoven fabric covering at least a portion of the first major surface; and a second nonwoven fabric covering at least a portion of the second major surface. The first and second nonwoven fabrics each comprise oxidized polyacrylonitrile fibers and optional reinforcing fibers.