Abstract: A laser car lamp includes a plurality of laser diodes, at least one light guide element, a phosphor element, and a lens. The light guide element has a laser light incident surface and a laser light exit surface. The phosphor element is located adjacent to the laser light exit surface of the light guide element, and the lens is located adjacent to the laser light incident surface of the light guide element. In addition, the laser diodes are arranged around the laser light incident surface of the light guide element.

Abstract: The present application discloses a light-emitting apparatus having a light-emitting device and a wavelength conversion layer. The light-emitting device has a first top surface and a first side surface, and the wavelength conversion layer has a second top surface and a second side surface and covers the first top surface. A ratio of a distance between the first top surface to the second top surface and a distance between the first side surface and the second side surface is between 1.1˜1.3.

Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

Abstract: This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.

Abstract: An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a top surface, a bottom surface, a plurality of lateral surfaces arranged between the top surface and the bottom surface, and a first electrode arranged on the bottom surface; a wavelength converting material covering a plurality of lateral surfaces; and a reflecting layer, formed on the wavelength converting material which is arranged on the top surface.

Abstract: An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a first width; an adhesive material enclosing the optoelectronic element and having a second width larger than the first width; a phosphor structure formed between the optoelectronic element and the adhesive material; and a transparent substrate formed on the adhesive material.

Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

Abstract: The present application discloses a light-emitting apparatus having a light-emitting device and a wavelength conversion layer. The light-emitting device has a first top surface and a first side surface, and the wavelength conversion layer has a second top surface and a second side surface and covers the first top surface. A ratio of a distance between the first top surface to the second top surface and a distance between the first side surface and the second side surface is between 1.1˜1.3.

Abstract: The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.

Abstract: This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.

Abstract: This disclosure discloses an illumination apparatus. The illumination apparatus comprises an inner cover comprising a top surface having a first length; a pedestal on which the inner cover is disposed comprising a top surface having a second length; and a holder supporting the pedestal; wherein the first length is greater than the second length.

Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

Abstract: This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.

Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.

Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Abstract: An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a first width; an adhesive material enclosing the optoelectronic element and having a second width larger than the first width; a phosphor structure formed between the optoelectronic element and the adhesive material; and a transparent substrate formed on the adhesive material.

Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.