Patents by Inventor Tsung-Yeh CHEN

Tsung-Yeh CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices and methods for forming the same
    Patent number: 11081560
    Abstract: A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: August 3, 2021
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Tsung-Yeh Chen, Sheng-Wei Fu, Chung-Yeh Lee
  • SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME
    Publication number: 20200194564
    Abstract: A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.
    Type: Application
    Filed: February 25, 2020
    Publication date: June 18, 2020
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Tsung-Yeh CHEN, Sheng-Wei FU, Chung-Yeh LEE
  • Semiconductor devices and methods for forming the same
    Patent number: 10615263
    Abstract: A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: April 7, 2020
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Tsung-Yeh Chen, Sheng-Wei Fu, Chung-Yeh Lee
  • SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME
    Publication number: 20190378902
    Abstract: A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.
    Type: Application
    Filed: June 11, 2018
    Publication date: December 12, 2019
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Tsung-Yeh CHEN, Sheng-Wei FU, Chung-Yeh LEE