Abstract: The present invention discloses a microwave heating system for desorbing contaminated soil, comprising: a feeding module; a heating cavity; a first microwave suppression cavity; a second microwave suppression cavity; a conveyor belt; a feeding device; and an exhaust module. The feeding device is arranged above the first microwave suppression cavity or the second microwave suppression cavity, and the feeding device contains a microwave absorber material. The invention further discloses a microwave heating process for desorption of polluted soil. With the microwave heating system and process for desorbing contaminated soil, the contaminated soil can be heated quickly and uniformly, and quickly cooled and taken out smoothly.

Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

Abstract: A method of treating cancer. The method includes introducing an effective amount of an oxidative catalyzing agent including titanium oxide, zinc oxide, zirconium oxide, tungsten oxide or tin oxide into a biological entity, and irradiating the biological entity with a ray. The oxidative catalyzing agent produces hydroxyl or hydrogen peroxide radicals after irradiation with the ray thereon.

Abstract: A field-effect transistor (FET) structure is provided. The FET structure includes a gate substrate, a dielectric layer, conductive electrodes, and a carbon nanotube (CNT). The gate substrate is made of a conductive material. The dielectric layer is disposed on the substrate. The conductive electrodes are disposed on the dielectric layer, and contain nickel and chromium.

Abstract: A field-effect transistor (FET) structure is provided. The FET structure includes a gate substrate, a dielectric layer, conductive electrodes, and a carbon nanotube (CNT). The gate substrate is made of a conductive material. The dielectric layer is disposed on the substrate. The conductive electrodes are disposed on the dielectric layer, and contain nickel and chromium.

Abstract: A method of treating cancer. The method includes introducing an effective amount of an oxidative catalyzing agent including titanium oxide, zinc oxide, zirconium oxide, tungsten oxide or tin oxide into a biological entity, and irradiating the biological entity with a ray. The oxidative catalyzing agent produces hydroxyl or hydrogen peroxide radicals after irradiation with the ray thereon.

Abstract: A technique to grow high quality and large area ZnSe layer on Si substrate is provided, comprising growing GexSi1?x/Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and finally growing a ZnSe film on top Ge buffer layers. Two concepts are applied in the process of this invention, the first one is to block the dislocations generated from GexSi1?x epitaxial layers and to terminate the propagated upward dislocations by using strained interfaces, accordingly the dislocation density of ZnSe layer is greatly reduced and the surface roughness is improved; the second concept is to solve the problems of anti-phase domain due to growth of polar materials on non-polar material using off-cut angle Si substrate, and that is free from diffusion problems between different atoms while generally growing ZnSe layers on Si substrate.

Abstract: A technique to grow high quality and large area ZnSe layer on Si substrate is provided, comprising growing GexSi1-x/Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and finally growing a ZnSe film on top Ge buffer layers. Two concepts are applied in the process of this invention, the first one is to block the dislocations generated from GexSi1-x epitaxial layers and to terminate the propagated upward dislocations by using strained interfaces, accordingly the dislocation density of ZnSe layer is greatly reduced and the surface roughness is improved; the second concept is to solve the problems of anti-phase domain due to growth of polar materials on non-polar material using off-cut angle Si substrate, and that is free from diffusion problems between different atoms while generally growing ZnSe layers on Si substrate.