Abstract: A package structure including an organic interposer substrate, a semiconductor die, conductive bumps, an underfill, and an insulating encapsulation is provided. The organic interposer substrate includes stacked organic dielectric layers and conductive wirings embedded in the stacked organic dielectric layers. The semiconductor die is disposed over and electrically connected to the conductive wirings of the organic interposer substrate, and the semiconductor die includes chamfered edges. The conductive bumps are disposed between the semiconductor die and the organic interposer substrate, and the semiconductor die is electrically connected to the organic interposer substrate through the conductive bumps. The underfill is disposed between the semiconductor die and the organic interposer substrate, wherein the underfill encapsulates the conductive bumps and is in contact with the chamfered edges of the at least one semiconductor die.

Abstract: Mechanisms are provided for intrusion detection based on regular expression matching. The mechanisms partition a regular expression (RegEx) rule set into a plurality of different partitions and distributes the plurality of different partitions to a plurality of different edge computing devices associated with a protected network of computing resources. The mechanisms route data packets of an incoming data stream to the plurality of edge computing devices, each of which processes the data packets to determine whether the data packets match RegEx rules in a partition distributed to the edge computing device. A determination is made as to whether the incoming data stream represents an intrusion based on a combination of results of the processing of the data packets by the plurality of edge computing devices.

Abstract: A package structure is provided. The package structure includes a redistribution structure on a substrate, a semiconductor die on the redistribution structure and electrically connected to the substrate, a wall structure on the redistribution structure and electrically isolated from the substrate. The semiconductor die includes a first sidewall, a second sidewall connected to the first sidewall, and a third sidewall connected to the second sidewall. The wall structure includes a first partition, a second partition and a third partition respectively immediately adjacent to the first sidewall, the second sidewall, and the third sidewall of the semiconductor die. The first partition is located immediately adjacent to and spaced apart from the second partition by a first distance, the second partition is located immediately adjacent to and spaced apart from the third partition by a second distance, and the first distance is substantially equal to the second distance.

Abstract: A method of forming a display device is provided.

Abstract: A method of forming a display device is provided.

Abstract: A method of forming a display device is provided.

Abstract: This invention provides a method for fabricating a polysilicon thin film layer, which performs a gas plasma treatment on channel regions defined in the polysilicon thin film layer after the polysilicon thin film layer is formed on a substrate. Threshold voltages for polysilicon thin film transistors formed subsequently are thus adjusted by the gas plasma treatment. A gate insulating layer is formed on the polysilicon thin film layer after the gas plasma treatment.