Abstract: A semiconductor package includes a circuit board structure, a first redistribution layer structure and first bonding elements. The circuit board structure includes outermost first conductive patterns and a first mask layer adjacent to the outermost first conductive patterns. The first redistribution layer structure is disposed over the circuit board structure. The first bonding elements are disposed between and electrically connected to the first redistribution layer structure and the outermost first conductive patterns of the circuit board structure. In some embodiments, at least one of the first bonding elements covers a top and a sidewall of the corresponding outermost first conductive pattern.

Abstract: In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.

Abstract: In a semiconductor device and a method of forming the same, the semiconductor device includes a substrate, conductive layer structures, plug structures, spacers and stop layers. The plug structures are disposed between two of the conductive layer structures in a second direction perpendicular to the first direction. The spacers are disposed between the conductive layer structures and the plug structures. The stop layers are disposed on the spacers between the conductive layer structures and the plug structures and has a bottommost surface disposed between a bottom surface of the conductive layer structures and a bottom surface of the spacers. The plug structures comprise at least one protrusion member extending from the bottommost surface toward the conductive layer structure and disposed between the stop layer and the substrate. Accordingly, contact area between the plug structures and the substrate can be increased.

Abstract: Provided is a method for processing pipelined data using a variable-latency speculating booth multiplier (VLSBM), including a first operation and a second operation. The first operation has the steps of partitioning partial products into a least significant part (LSP) and a most significant part (MSP), estimating a carry of the LSP, computing the MSP based on the estimated carry, computing the LSP independently to obtain a true carry and detecting a computation error by comparing the estimated carry with the true carry. Also, the second operation has the step of correcting the computation error based on the difference between the estimated carry and the true carry. Further, a VLSBM for processing pipelined data is also provided.

Abstract: Provided is a method for processing pipelined data using a variable-latency speculating booth multiplier (VLSBM), including a first operation and a second operation. The first operation has the steps of partitioning partial products into a least significant part (LSP) and a most significant part (MSP), estimating a carry of the LSP, computing the MSP based on the estimated carry, computing the LSP independently to obtain a true carry and detecting a computation error by comparing the estimated carry with the true carry. Also, the second operation has the step of correcting the computation error based on the difference between the estimated carry and the true carry. Further, a VLSBM for processing pipelined data is also provided.

Abstract: Embodiments of a method for preparing a leadframe for integrated circuit (IC) die packaging in a molded package with an exposed die pad are disclosed. In one embodiment, a method involves producing a leadframe with a die pad, wherein the die pad has a top surface, a bottom surface, and a perimeter edge. The die pad is then planarized to flatten burrs that may exist at the perimeter edge of the die pad, wherein planarizing the die pad comprises embedding tool markings in the die pad at the perimeter edge of the die pad, the tool markings including a series of peaks and valleys that run parallel to the perimeter edge at all locations around the perimeter edge. Embodiments of a leadframe for IC die packaging in a molded package are also disclosed.

Abstract: Embodiments of a method for preparing a leadframe for integrated circuit (IC) die packaging in a molded package with an exposed die pad are disclosed. In one embodiment, a method involves producing a leadframe with a die pad, wherein the die pad has a top surface, a bottom surface, and a perimeter edge. The die pad is then planarized to flatten burrs that may exist at the perimeter edge of the die pad, wherein planarizing the die pad comprises embedding tool markings in the die pad at the perimeter edge of the die pad, the tool markings including a series of peaks and valleys that run parallel to the perimeter edge at all locations around the perimeter edge. Embodiments of a leadframe for IC die packaging in a molded package are also disclosed.

Abstract: A logic circuit includes first, second, third and fourth transistors. The first transistor is a first type, and has a gate terminal for receiving a control signal representative of one of NAND and NOR operations of at least first and second signals, a first terminal coupled to a first power source, and a second terminal serving as an output terminal of the logic circuit. The second transistor is a second type, and has a first terminal for receiving a third signal, and gate and second terminals respectively coupled to the gate and second terminals of the first transistor. Each of the third and fourth transistors is the first type and has a gate terminal. The gate terminals of the third and fourth transistors are respectively adapted to receive the first and second signals. The series-connected third and fourth transistors are connected in parallel to the second transistor.

Abstract: A driving mechanism of baby rocking chair includes a transmission system having a transmission motor, a monitoring device, and a control circuit. When the rocking chair oscillates upward and approaches a predetermined set-up high point position that is affected by the gravitational force causing the slowing down of rotating speed, the monitoring device transmits a signal and provides the control circuit with the signal. As the rocking chair reaches the predetermined set-up high point position, the control circuit is capable of switching the direction of the rotation of the transmission motor. It is by this way of controlling the rotating shaft of oscillation of the rocking chair that the control circuit is capable of driving the rocking chair steadily.

Abstract: A method for modeling a memory with delay back annotation in accordance with the VITAL application specific integrated circuit modeling specification begins with modeling the memory with a timing generic and a port declaration. The wire delay of the memory is then modeled, followed by modeling a timing check for the memory. The wire delay of the model of the memory is then created. A description of the functional operation of the memory is then generated. The path delay for the address, control, and data bus signals to the memory is formed by overloading the VITAL path delay procedures. The VITAL timing check procedures are overloaded to determine timing constraint violations of the timing bus signals of the memory. The VITAL wire delay procedures are overloaded to determine interconnection delay bus signals of the memory.

Abstract: A BIST controller and a separate measurement circuit are used to determine the maximum time period for accessing data stored in an embedded integrated circuit memory. The BIST controller includes a finite state controller for controlling the state of said BIST, a pattern generator for generating a patterned stimulus to be applied to the memory, and a comparator for comparing the response of said memory to said stimulus, to a reference response. The measurement circuit includes a pair of logic circuits for respectively operating on “1's” and “0's” data read from the memory, and a plurality of time delay elements that introduce time delays in the data prior to delivery to the logic circuits.

Abstract: A BIST controller and a separate measurement circuit are used to determine the maximum time period for accessing data stored in an embedded integrated circuit memory. The BIST controller includes a finite state controller for controlling the state of said BIST, a pattern generator for generating a patterned stimulus to be applied to the memory, and a comparator for comparing the response of said memory to said stimulus, to a reference response. The measurement circuit includes a pair of logic circuits for respectively operating on “1's” and “0's” data read from the memory, and a plurality of time delay elements that introduce time delays in the data prior to delivery to the logic circuits.