Abstract: A method for licensing a copyrighted work over a network includes a login step in which a copyright owner logs in a first network copyright license system. In a copyright registration step, the copyright owner uploads registration information of a copyrighted work to the first network license system. In a renting/selling setting step, a person obtains the copyrighted work information, finishes a renting/selling agreement with the copyright owner through a second network copyright license system, and becomes a licensee. In a network renting/selling step, a consumer browses a network renting/selling system of the second network copyright license system and selects the copyrighted work to be read. The second network renting/selling system electrically transfers a portion of the renting/selling fee to the copyright owner according to the distribution ratio of the income from renting/selling the copyrighted work set in the renting/selling license setting step.

Abstract: A method for renting/selling a copyrighted work over a network includes a login step, a renting/selling setting step, a network renting/selling step, a sublease setting step, and a network sublease step. In the sublease setting step, a consumer optionally proceeds with sublease setting on a network copyright renting/selling system during the time period of renting/selling. The sublease setting includes the sublease fee, registration of personal information and the bank account information of each subleasee, and the distribution ratio of the income from the sublease of the copyrighted work. In the network sublease step, another consumer selects the copyrighted work to be sublet on the network copyright renting/selling system. The network copyright renting/selling system permits the another consumer to unlimitedly read the copyrighted work during the time period of the sublease after payment. The income from the sublease is distributed according to the distribution ratio.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A first layer is deposited over a substrate. A plurality of mandrels is formed over the first layer. Guiding-spacers are formed along sidewalls of the mandrels. Then the mandrels are removed. A neutral layer (NL) and a block copolymer (BCP) layer are deposited over the first layer and the guiding-spacers. A anneal is applied to the BCP layer to form a first polymer nanostructure between the guiding-spacers and being surrounded by a second polymer nanostructure. The first polymer nanostructures locate at a same distance from the first layer. Polymer nano-blocks are formed by selectively etching the second polymer nanostructure and the NL. By using the polymer nano-blocks and the guiding spacer as etch masks, the first layer is etched to form openings. The substrate is etched through the openings to form substrate trench and substrate fin.

Abstract: Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices are disclosed. In some embodiments, a cooling device for a semiconductor device includes a reservoir having a first plate and a second plate coupled to the first plate. A cavity is between the first plate and the second plate. A phase change material (PCM) is in the cavity. The cooling device is adapted to dissipate heat from a packaged semiconductor device.

Abstract: In a network concessional sales method, a client logs in a network sales system. A service party accesses the network sales system to provide concessional sales conditions of each commodity. The network sales system permits each logged-in client to browse database information of the concessional sales conditions of each commodity. The client acts as a recommender by sending the information of the recommended commodity to recommended clients, permitting the recommended clients to know the information of the recommended commodity. The recommender or the recommended clients purchase of the recommended commodity through the network sales system. The network sales system automatically calculates a discounted price of the recommended commodity based on the concessional sales conditions and accumulated concessions based on the recommendation. After completion of the purchase of the recommended commodity, the network sales system automatically adds a total concession to an account of the recommender.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system. The EUV lithography system includes a collector having a coating surface designed to collect and reflect EUV radiation; a gas supply module; and a gas pipeline integrated with the collector and connected to the gas supply module. The gas pipeline includes inward and outward entrances into the collector. The inward and outward entrances are configured and operable to form a gas curtain on the coating surface of the collector.

Abstract: Embodiments pin connections, electronic devices, and methods are shown that include pin configurations to reduce voids and pin tilting and other concerns during pin attach operations, such as attachment to a chip package pin grid array. Pin head are shown that include features such as convex surfaces, a number of legs, and channels in pin head surfaces.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution having first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material having a regular pattern of micro-domains of the second polymer species within a polymer matrix having the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) radiation source module. The EUV radiation source module includes a collector designed to collect and reflect EUV light; a solid cover integrated with the collector and configured to have a supply gap between the collector and the solid cover; and a gas pipeline integrated with the collector. The supply gap provides a path for gas flow to the radiation source at edge of the collector. The gas pipeline includes an inward entrance and an outward entrance.

Abstract: A fan control method for a computer system is provided. The computer system includes a fan and a target device. The fan control system includes a controller to control the rotation speed of the fan. The controller controls the rotation speed according to a time-variable rate of current consumed by the target device. Particularly, when the time-variable rate of current exceeds a threshold, the controller controls the fan to operate at a maximum rotation speed.

Abstract: Embodiments pin connections, electronic devices, and methods are shown that include pin configurations to reduce voids and pin tilting and other concerns during pin attach operations, such as attachment to a chip package pin grid array. Pin head are shown that include features such as convex surfaces, a number of legs, and channels in pin head surfaces.

Abstract: A fan control system for a computer system is provided. The computer system includes a fan and a target device. The fan control system includes a controller to control the rotation speed of the fan. The controller controls the rotation speed according to a time-variable rate of current consumed by the target device. Particularly, when the time-variable rate of current exceeds a threshold, the controller controls the fan to operate at a maximum rotation speed.

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution having first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material having a regular pattern of micro-domains of the second polymer species within a polymer matrix having the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A first layer is deposited over a substrate. A plurality of mandrels is formed over the first layer. Guiding-spacers are formed along sidewalls of the mandrels. Then the mandrels are removed. A neutral layer (NL) and a block copolymer (BCP) layer are deposited over the first layer and the guiding-spacers. A anneal is applied to the BCP layer to form a first polymer nanostructure between the guiding-spacers and being surrounded by a second polymer nanostructure. The first polymer nanostructures locate at a same distance from the first layer. Polymer nano-blocks are formed by selectively etching the second polymer nanostructure and the NL. By using the polymer nano-blocks and the guiding spacer as etch masks, the first layer is etched to form openings. The substrate is etched through the openings to form substrate trench and substrate fin.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) radiation source module. The EUV radiation source module includes a collector designed to collect and reflect EUV light; a solid cover integrated with the collector and configured to have a supply gap between the collector and the solid cover; and a gas pipeline integrated with the collector. The supply gap provides a path for gas flow to the radiation source at edge of the collector. The gas pipeline includes an inward entrance and an outward entrance.

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.