Patents by Inventor Tsung-Yu Hou

Tsung-Yu Hou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10249291
    Abstract: An animation display system is provided. The animation display system includes a display; a storage configured to store a language model database, a phonetic-symbol lip-motion matching database and a lip motion synthesis database; and a processor electronically connected to the storage and the display, respectively. The processor includes a speech conversion module, a phonetic-symbol lip-motion matching module, and a lip motion synthesis module. A lip animation display method is also provided.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: April 2, 2019
    Assignee: ASUSTeK COMPUTER INC.
    Inventors: Wei-Ting Lin, Tsung-Yu Hou, Min-Che Huang, Shih-Hao Ke, Shu-Hui Chou
  • Publication number: 20170345201
    Abstract: An animation display system is provided. The animation display system includes a display; a storage configured to store a language model database, a phonetic-symbol lip-motion matching database and a lip motion synthesis database; and a processor electronically connected to the storage and the display, respectively. The processor includes a speech conversion module, a phonetic-symbol lip-motion matching module, and a lip motion synthesis module. A lip animation display method is also provided.
    Type: Application
    Filed: May 24, 2017
    Publication date: November 30, 2017
    Inventors: Wei-Ting LIN, Tsung-Yu HOU, Min-Che HUANG, Shih-Hao KE, Shu-Hui CHOU
  • Patent number: 8445363
    Abstract: A method of fabricating an epitaxial layer includes providing a substrate. The substrate is etched to form at least a recess within the substrate. A surface treatment is performed on the recess to form a Si—OH containing surface. An in-situ epitaxial process is performed to form an epitaxial layer within the recess, wherein the epitaxial process is performed in a hydrogen-free atmosphere and at a temperature lower than 800° C.
    Type: Grant
    Filed: April 21, 2011
    Date of Patent: May 21, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Tsuo-Wen Lu, I-Ming Lai, Tsung-Yu Hou, Chien-Liang Lin, Wen-Yi Teng, Shao-Wei Wang, Yu-Ren Wang, Chin-Cheng Chien
  • Publication number: 20120270382
    Abstract: A method of fabricating an epitaxial layer includes providing a substrate. The substrate is etched to form at least a recess within the substrate. A surface treatment is performed on the recess to form a Si—OH containing surface. An in-situ epitaxial process is performed to form an epitaxial layer within the recess, wherein the epitaxial process is performed in a hydrogen-free atmosphere and at a temperature lower than 800° C.
    Type: Application
    Filed: April 21, 2011
    Publication date: October 25, 2012
    Inventors: Tsuo-Wen Lu, I-Ming Lai, Tsung-Yu Hou, Chien-Liang Lin, Wen-Yi Teng, Shao-Wei Wang, Yu-Ren Wang, Chin-Cheng Chien
  • Publication number: 20110189615
    Abstract: A method of manufacturing MOS transistor includes providing a substrate having a gate formed thereon; forming a hard mask layer on the substrate, performing an acid treatment to a surface of the hard mask layer, forming a photoresist layer on the hard mask layer after performing the acid treatment, performing a photolithography process to pattern the photoresist layer and the hard mask layer, performing an etching process to form recesses in the substrate, and performing a SEG method to form epitaxial layers respectively in the recesses.
    Type: Application
    Filed: January 29, 2010
    Publication date: August 4, 2011
    Inventors: Tsung-Yu Hou, Tai-Heng Yu, Chien-Wei Su, Wen-Yi Teng