Abstract: A method for producing an adaptive element for dental implantation includes: creating a 3D virtual model including a crown part and a root part; obtaining a boundary curve between the crown part and the root part; defining a boundary plane on the root part perpendicular to a vertical axis of the 3D virtual model and spaced apart from the boundary curve; projecting the boundary curve on the boundary plane in a direction parallel to the vertical axis; generating a tubular model having a predetermined thickness based on the boundary curve, a virtual surface connected from the boundary curve to the cutting plane, and the cutting plane; and producing the adaptive element according to the tubular model.

Abstract: A method includes etching a hybrid substrate to form a recess in the hybrid substrate, in which the hybrid substrate includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the first semiconductor layer, in which after the etching, a top surface of the first semiconductor layer is exposed to the recess; forming a spacer on a sidewall of the recess, in which the spacer is slanted at a first angle relative to a top surface of the first semiconductor layer; reshaping the spacer such that the a first sidewall of the reshaped spacer is slanted at a second angle relative to the top surface of the first semiconductor layer, in which the second angle is greater than the first angle; and performing a first epitaxy process to grow an epitaxy semiconductor layer in the recess after reshaping the spacer.

Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.

Abstract: A semiconductor device includes a substrate and a semiconductor layer. The substrate includes a planar portion and a plurality of pillars on a periphery of the planar portion. The pillars are shaped as rectangular columns, and corners of two of the pillars at the same side of the planar portion are aligned in a horizontal direction or a direction perpendicular to the horizontal direction. The semiconductor layer is disposed over the planar portion and between the pillars.

Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.

Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.

Abstract: A motor comprises a housing having a space, a stator including a spool casing arrayed in the space, a rotor containing an axle and a magnet located inside the spool casing, the axle penetrating the magnet and having two ends protruding out of the housing, wherein the axle has two ends respectively allocated with an end-shield bearing integrating with the spool casing and an bottom-plate bearing detachably mounting on the bottom side of the housing in order to improve the concentricity of the motor.

Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.

Abstract: A method includes etching a hybrid substrate to form a recess in the hybrid substrate, in which the hybrid substrate includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the first semiconductor layer, in which after the etching, a top surface of the first semiconductor layer is exposed to the recess; forming a spacer on a sidewall of the recess, in which the spacer is slanted at a first angle relative to a top surface of the first semiconductor layer; reshaping the spacer such that the a first sidewall of the reshaped spacer is slanted at a second angle relative to the top surface of the first semiconductor layer, in which the second angle is greater than the first angle; and performing a first epitaxy process to grow an epitaxy semiconductor layer in the recess after reshaping the spacer.

Abstract: A semiconductor device includes a substrate and a semiconductor layer. The substrate includes a planar portion and a plurality of pillars on a periphery of the planar portion. The pillars are shaped as rectangular columns, and corners of two of the pillars at the same side of the planar portion are aligned in a horizontal direction or a direction perpendicular to the horizontal direction. The semiconductor layer is disposed over the planar portion and between the pillars.

Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.

Abstract: A method includes etching a hybrid substrate to form a recess in the hybrid substrate, in which the hybrid substrate includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the first semiconductor layer, in which after the etching, a top surface of the first semiconductor layer is exposed to the recess; forming a spacer on a sidewall of the recess, in which the spacer is slanted at a first angle relative to a top surface of the first semiconductor layer; reshaping the spacer such that the a first sidewall of the reshaped spacer is slanted at a second angle relative to the top surface of the first semiconductor layer, in which the second angle is greater than the first angle; and performing a first epitaxy process to grow an epitaxy semiconductor layer in the recess after reshaping the spacer.

Abstract: Methods of forming semiconductor devices are provided. One of the methods includes following steps. A plurality of hard mask patterns is formed around a region of a substrate, wherein an imaginary connecting line is formed between corners of two of the plurality of hard mask patterns at the same side of the region, and the imaginary connecting line is substantially parallel to or perpendicular to a horizontal direction. A semiconductor layer is formed on the substrate by a selective epitaxial growth process.

Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.

Abstract: Methods of forming semiconductor devices are provided. One of the methods includes following steps. A plurality of hard mask patterns is formed around a region of a substrate, wherein an imaginary connecting line is formed between corners of two of the plurality of hard mask patterns at the same side of the region, and the imaginary connecting line is substantially parallel to or perpendicular to a horizontal direction. A semiconductor layer is formed on the substrate by a selective epitaxial growth process.

Abstract: A method includes etching a hybrid substrate to form a recess in the hybrid substrate, in which the hybrid substrate includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the first semiconductor layer, in which after the etching, a top surface of the first semiconductor layer is exposed to the recess; forming a spacer on a sidewall of the recess, in which the spacer is slanted at a first angle relative to a top surface of the first semiconductor layer; reshaping the spacer such that the a first sidewall of the reshaped spacer is slanted at a second angle relative to the top surface of the first semiconductor layer, in which the second angle is greater than the first angle; and performing a first epitaxy process to grow an epitaxy semiconductor layer in the recess after reshaping the spacer.

Abstract: The present invention is an optical proximity sensor and manufacturing method thereof. The optical proximity sensor has an optical sensing unit, an illuminating unit, multiple transparent gels and a package. The package encapsulates the optical sensing unit and the illuminating unit. The transparent gels are respectively formed on top surfaces of the optical sensing unit and the illuminating unit. The transparent gels respectively have a convex part and a recess formed in the convex part. The package has through holes communicating with the recesses of the transparent gels to form openings. In a step of injecting encapsulant gel, because the transparent gels are still plastic, the protrusions can closely attach to the transparent gels. The encapsulant gel is prevented from forming above the sensing part and the illuminating part.

Abstract: The present invention is an optical proximity sensor and manufacturing method thereof. The optical proximity sensor has an optical sensing unit, an illuminating unit, multiple transparent gels and a package. The package encapsulates the optical sensing unit and the illuminating unit. The transparent gels are respectively formed on top surfaces of the optical sensing unit and the illuminating unit. The transparent gels respectively have a convex part and a recess formed in the convex part. The package has through holes communicating with the recesses of the transparent gels to form openings. In a step of injecting encapsulant gel, because the transparent gels are still plastic, the protrusions can closely attach to the transparent gels. The encapsulant gel is prevented from forming above the sensing part and the illuminating part.

Abstract: The present invention is an optical proximity sensor and manufacturing method thereof. The optical proximity sensor has an optical sensing unit, an illuminating unit, multiple transparent gels and a package. The package encapsulates the optical sensing unit and the illuminating unit. The transparent gels are respectively formed on top surfaces of the optical sensing unit and the illuminating unit. The transparent gels respectively have a convex part and a recess formed in the convex part. The package has through holes communicating with the recesses of the transparent gels to form openings. In a step of injecting encapsulant gel, because the transparent gels are still plastic, the protrusions can closely attach to the transparent gels. The encapsulant gel is prevented from forming above the sensing part and the illuminating part.

Abstract: An inkjet printing apparatus includes an inkjet print-head, an ink inlet conduit, a vacuum device, and a cleaning assembly. The inkjet print-head defines a number of nozzles. The ink inlet conduit is connected to the inkjet print-head and communicates with the nozzles. The cleaning assembly includes a cleaning member defining a cleaning groove. The vacuum device is connected to the inkjet print-head to impel cleaner received in the cleaning groove to flow through the nozzles along a direction reverse of a direction the ink is jetted.