Patents by Inventor Tsung-Yu Tsai

Tsung-Yu Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10872906
    Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsung-Yu Hung, Pei-Wei Lee, Pang-Yen Tsai
  • Publication number: 20200377796
    Abstract: Disclosed is a negative dielectric anisotropic liquid crystal compound represented by Formula (I): wherein R1, R2, R3, and n are as defined herein. A process for preparing the negative dielectric anisotropic liquid crystal compound, a negative dielectric anisotropic liquid crystal composition including the negative dielectric anisotropic liquid crystal compound, and use of the negative dielectric anisotropic liquid crystal compound are also disclosed.
    Type: Application
    Filed: August 16, 2019
    Publication date: December 3, 2020
    Applicants: Daily-Xianhua Optoelectronics Materials Co., Ltd., Yantai Xianhua Chem-Tech Co., Ltd.
    Inventors: Tsung-Yu Tsai, Shu-Ling Lo, Meng-Yun Tseng, Zhaochang Luan, Peichuan Feng
  • Patent number: 10840152
    Abstract: A method includes etching a hybrid substrate to form a recess in the hybrid substrate, in which the hybrid substrate includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the first semiconductor layer, in which after the etching, a top surface of the first semiconductor layer is exposed to the recess; forming a spacer on a sidewall of the recess, in which the spacer is slanted at a first angle relative to a top surface of the first semiconductor layer; reshaping the spacer such that the a first sidewall of the reshaped spacer is slanted at a second angle relative to the top surface of the first semiconductor layer, in which the second angle is greater than the first angle; and performing a first epitaxy process to grow an epitaxy semiconductor layer in the recess after reshaping the spacer.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: November 17, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Wei Lee, Tsung-Yu Hung, Pang-Yen Tsai, Yasutoshi Okuno
  • Patent number: 10827293
    Abstract: A sound reproducing method used in sound reproducing apparatus that includes the steps outlined below is provided. A sound signal is generated with a 3D sound generating process according to listener data and sound data. Pre-recorded sound data is retrieved to further generate a target distance function corresponding to the sound distance. A fixed head-related transfer function corresponding to a fixed distance is retrieved. A target head-related transfer function corresponding to the sound distance is generated by adapting the target distance function to the fixed head-related transfer function. The sound signal is reproduced by multiplying the sound signal by the target head-related transfer function.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: November 3, 2020
    Assignee: HTC Corporation
    Inventors: Chun-Min Liao, Yan-Min Kuo, Li-Yen Lin, Chi-Tang Ho, Tien-Ming Wang, Tsung-Yu Tsai, Yen-Chieh Wang, Shuo-Yen Lin
  • Patent number: 10812505
    Abstract: A computer system includes an openflow switch, configured to receive a plurality of packets; a network controller, coupled to the openflow switch and configured to determine a route of each of the plurality of packets; and a detecting and defending system, configured to perform transformation of information formats of the plurality of packets, retrieve and label the plurality of packets to determine whether the plurality of packets are abnormal or not and generate a defending determination.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: October 20, 2020
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Li-Der Chou, Chia-Wei Tseng, Chia-Kuan Yen, Wei-Hsiang Tsai, Tsung-Fu Ou, Yi-Hsuan Chiu, Wei-Yu Chen, Meng-Sheng Lai
  • Patent number: 10811255
    Abstract: Methods of forming semiconductor devices are provided. One of the methods includes following steps. A plurality of hard mask patterns is formed around a region of a substrate, wherein an imaginary connecting line is formed between corners of two of the plurality of hard mask patterns at the same side of the region, and the imaginary connecting line is substantially parallel to or perpendicular to a horizontal direction. A semiconductor layer is formed on the substrate by a selective epitaxial growth process.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: October 20, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Wei Lee, Pang-Yen Tsai, Tsung-Yu Hung
  • Publication number: 20200315283
    Abstract: The present disclosure provides for a knitted structure, comprising a base material and a fused knitted part. The fused knitted part comprising a first fiber, wherein the first fiber extends in a loop form through the base material to bond to the base material, and at least a portion of the first fiber is fused and bonded to a fiber portion.
    Type: Application
    Filed: April 3, 2020
    Publication date: October 8, 2020
    Inventors: CHUNG-CHIH FENG, PAI-HSIANG WU, TSUNG-YU TSAI, CHIEH LEE, WEI-LING CHEN
  • Publication number: 20200244888
    Abstract: An encoding method, playing method and apparatus for image stabilization of panoramic video, and a method for evaluating image stabilization algorithm are provided. The image stabilization method for the panoramic video is applicable to an electronic apparatus including a processor. In the method, a plurality of image frames of a panoramic video is captured, and each image frame is transformed into a plurality of projection frames on a plurality of faces of a cubemap. Then, variations of triaxial displacements and attitude angles between the projection frames transformed onto each of the faces and adjacent in time are calculated. The variations of triaxial displacements and attitude angles are smoothed and recorded as movement information. While playing the panoramic video, the panoramic video is corrected by the movement information and played. Thus, it is possible to reduce the amount of calculation required for the stabilization calculations on the captured video.
    Type: Application
    Filed: June 10, 2019
    Publication date: July 30, 2020
    Inventors: Tsung-Yu TSAI, I-Chih CHEN
  • Patent number: 10695016
    Abstract: A handheld radiation image detecting system and an operation method thereof are provided. The handheld radiation image detecting system includes a handheld device including a radiation emitter and a first transceiver and a sensing device including a radiation image sensor and a second transceiver. The first transceiver is coupled to the radiation emitter and used for generating a first wave with directionality. The second transceiver is used for receiving the first wave and for generating a second wave with directionality, and the first transceiver is used for receiving the second wave.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: June 30, 2020
    Assignees: HannsTouch Solution Incorporated, Energy Resources International Co., LTD.
    Inventors: Chi-Kuang Lai, Hsu-Ho Wu, Wei-Hsuan Ho, Ching-Feng Tsai, Che-Yu Chuang, Tsung-Min Yang, Yu-Wei Chen
  • Patent number: 10692852
    Abstract: Silicon-controlled rectifiers and methods for forming a silicon-controlled rectifier. A first well of a first conductivity type is arranged in a substrate, and second and third wells of a second conductivity type are arranged in the substrate between the first well and the top surface of the substrate. A deep trench isolation region is laterally arranged between the first well of the second conductivity type and the second well of the second conductivity type. The second well is adjoined with the first well along a first interface, the third well is adjoined with the first well along a second interface, and the deep trench isolation region extends the top surface of the substrate past the first interface and the second interface and into the first well. A doped region of the first conductivity type is arranged in the substrate between the second well and the top surface of the substrate.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: June 23, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Alain Loiseau, You Li, Mickey Yu, Tsung-Che Tsai, Souvick Mitra, Robert J. Gauthier, Jr.
  • Publication number: 20200195661
    Abstract: A computer system includes an openflow switch, configured to receive a plurality of packets; a network controller, coupled to the openflow switch and configured to determine a route of each of the plurality of packets; and a detecting and defending system, configured to perform transformation of information formats of the plurality of packets, retrieve and label the plurality of packets to determine whether the plurality of packets are abnormal or not and generate a defending determination.
    Type: Application
    Filed: December 12, 2018
    Publication date: June 18, 2020
    Inventors: Li-Der Chou, Chia-Wei Tseng, Chia-Kuan Yen, Wei-Hsiang Tsai, Tsung-Fu Ou, Yi-Hsuan Chiu, Wei-Yu Chen, Meng-Sheng Lai
  • Patent number: 10681486
    Abstract: A method for obtaining Hi-Res audio transfer information is provided. The method is applicable to the electronic device having a processor. In the method, a first audio signal is captured and converted from the time domain into in the frequency domain to generate a first signal spectrum. Then, a regression analysis is performed on an energy distribution of the first signal spectrum to predict an extended energy distribution according to the first signal spectrum, and head-related parameters are used to compensate for the extended energy distribution to generate an extended signal spectrum. Finally, the first signal spectrum and the extended signal spectrum are combined into a second signal spectrum which is converted from the frequency domain into the time domain to generate a second audio signal including Hi-Res audio transfer information.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: June 9, 2020
    Assignee: HTC Corporation
    Inventors: Tien-Ming Wang, Li-Yen Lin, Chun-Min Liao, Chi-Tang Ho, Yan-Min Kuo, Tsung-Yu Tsai
  • Publication number: 20200135463
    Abstract: Methods of forming semiconductor devices are provided. One of the methods includes following steps. A plurality of hard mask patterns is formed around a region of a substrate, wherein an imaginary connecting line is formed between corners of two of the plurality of hard mask patterns at the same side of the region, and the imaginary connecting line is substantially parallel to or perpendicular to a horizontal direction. A semiconductor layer is formed on the substrate by a selective epitaxial growth process.
    Type: Application
    Filed: February 26, 2019
    Publication date: April 30, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Pei-Wei Lee, Pang-Yen Tsai, Tsung-Yu Hung
  • Publication number: 20200135768
    Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.
    Type: Application
    Filed: March 13, 2019
    Publication date: April 30, 2020
    Inventors: Tsung-Yu HUNG, Pei-Wei LEE, Pang-Yen TSAI
  • Publication number: 20200135715
    Abstract: Silicon-controlled rectifiers and methods for forming a silicon-controlled rectifier. A first well of a first conductivity type is arranged in a substrate, and second and third wells of a second conductivity type are arranged in the substrate between the first well and the top surface of the substrate. A deep trench isolation region is laterally arranged between the first well of the second conductivity type and the second well of the second conductivity type. The second well is adjoined with the first well along a first interface, the third well is adjoined with the first well along a second interface, and the deep trench isolation region extends the top surface of the substrate past the first interface and the second interface and into the first well. A doped region of the first conductivity type is arranged in the substrate between the second well and the top surface of the substrate.
    Type: Application
    Filed: October 26, 2018
    Publication date: April 30, 2020
    Inventors: Alain Loiseau, You Li, Mickey Yu, Tsung-Che Tsai, Souvick Mitra, Robert J. Gauthier, JR.
  • Publication number: 20200111682
    Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.
    Type: Application
    Filed: December 6, 2019
    Publication date: April 9, 2020
    Inventors: Chen-Yu Tsai, Tsung-Shang Wei, Yu-Sheng Lin, Wen-Chih Chiou, Shin-Puu Jeng
  • Patent number: D884073
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: May 12, 2020
    Inventor: Tsung-Yu Tsai
  • Patent number: D885788
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: June 2, 2020
    Inventor: Tsung-Yu Tsai
  • Patent number: D902521
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: November 17, 2020
    Inventor: Tsung-Yu Tsai
  • Patent number: D904516
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: December 8, 2020
    Inventor: Tsung-Yu Tsai