Patents by Inventor Tsung-Yuan Lee

Tsung-Yuan Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High density ROM cell
    Patent number: 7205614
    Abstract: A high density read-only memory (ROM) cell is installed on a silicon substrate for storing data. The ROM cell includes a first doped region being of a second conductive type installed on the silicon substrate, a plurality of first heavily doped regions being of a first conductive type installed in the first doped region, a second doped region being of the second conductive type installed on the silicon substrate, and a gate installed on the surface of the silicon substrate and adjacent to the first doped region and the second doped region.
    Type: Grant
    Filed: January 6, 2004
    Date of Patent: April 17, 2007
    Assignee: Faraday Technology Corp.
    Inventors: Sheng-Tai Young, Te-Sun Wu, Tsung-Yuan Lee, Chih-Kang Chiu
  • HIGH DENSITY ROM CELL
    Publication number: 20050145948
    Abstract: A high density read-only memory (ROM) cell is installed on a silicon substrate for storing data. The ROM cell includes a first doped region being of a second conductive type installed on the silicon substrate, a plurality of first heavily doped regions being of a first conductive type installed in the first doped region, a second doped region being of the second conductive type installed on the silicon substrate, and a gate installed on the surface of the silicon substrate and adjacent to the first doped region and the second doped region.
    Type: Application
    Filed: January 6, 2004
    Publication date: July 7, 2005
    Inventors: Sheng-Tai Young, Te-Sun Wu, Tsung-Yuan Lee, Chih-Kang Chiu