Patents by Inventor Tsuo-Hsin Ma

Tsuo-Hsin Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5767567
    Abstract: The present invention discloses a MOSFET power IC device formed in a semiconductor chip including a source contact area which is provided for connecting to a lead-frame via a several of lead-wires. The power IC device includes many lead-wire contact points on the source contact area for securely attaching the lead wires onto the source contact area. These lead-wire contact points are uniformly distributed substantially over the source contact area thus the spread resistance is reduced whereby the device on-resistance and device performance may be improved.
    Type: Grant
    Filed: September 10, 1996
    Date of Patent: June 16, 1998
    Assignee: MageMos Corporation
    Inventors: Yung-Chang Hu, Tsuo-Hsin Ma