Abstract: In one example, an optoelectronic assembly may include a laser array, an amplifier array, and a multimode interference coupler optically coupling the laser array and the amplifier array. The laser array may include at least one primary laser and at least one spare laser configured to be activated if the primary laser fails. The amplifier array may include at least two amplifiers configured to amplify optical signals received from the laser array.

Abstract: In one example, an optoelectronic assembly may include a laser array, an amplifier array, and a multimode interference coupler optically coupling the laser array and the amplifier array. The laser array may include at least one primary laser and at least one spare laser configured to be activated if the primary laser fails. The amplifier array may include at least two amplifiers configured to amplify optical signals received from the laser array.

Abstract: A system is proposed for continuously monitoring the integrity of a transmission fiber coupled to a laser source and immediately shutting down the laser source upon recognition of any type of cut, break or disconnect along the transmission fiber. A pair of monitoring photodiodes is included with the laser source and used to look at the ratio of reflected light to transmitted light, shutting down the laser if the ratio exceeds a given threshold. If a break is present, the power of the reflected light will be higher than normal, where a defined threshold is used to determine of the calculated intensity is indicative of a break. By using measurements performed in terms of decibels, the monitoring system needs only to take the difference in intensities to generate the reflection/transmission ratio output.

Abstract: An optoelectronic assembly may include a photonic integrated circuit (PIC) with a top surface and a laser with a top surface and a bottom surface. The optoelectronic assembly may also include a housing configured to cooperate with the PIC to one or both of house and support one or more components. The housing may include a PIC mount including a first surface to interface with the top surface of the PIC, and a laser mount including a second surface to interface with the top or bottom surface of the laser. The first surface and the second surface may be parallel to each other.

Abstract: In one example, an optoelectronic assembly may include a laser array, an amplifier array, and a multimode interference coupler optically coupling the laser array and the amplifier array. The laser array may include at least one primary laser and at least one spare laser configured to be activated if the primary laser fails. The amplifier array may include at least two amplifiers configured to amplify optical signals received from the laser array.

Abstract: An optoelectronic assembly may include a photonic integrated circuit (PIC) with a top surface and a laser with a top surface and a bottom surface. The optoelectronic assembly may also include a housing configured to cooperate with the PIC to one or both of house and support one or more components. The housing may include a PIC mount including a first surface to interface with the top surface of the PIC, and a laser mount including a second surface to interface with the top or bottom surface of the laser. The first surface and the second surface may be parallel to each other.

Abstract: In one example embodiment, a DFB laser includes a substrate; an active region positioned above the substrate; a grating layer positioned above the active region, the grating layer including a portion that serves as a primary etch stop layer; a secondary etch stop layer positioned above the grating layer; and a spacer layer interposed between the grating layer and the secondary etch stop layer.

Abstract: In one example embodiment, a DFB laser includes a substrate; an active region positioned above the substrate; a grating layer positioned above the active region, the grating layer including a portion that serves as a primary etch stop layer; a secondary etch stop layer positioned above the grating layer; and a spacer layer interposed between the grating layer and the secondary etch stop layer.

Abstract: In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.

Abstract: A method for depositing protective coatings on front and rear facets of an optical device, such as a laser die, is disclosed. The protective coatings help prevent laser facet damage common to laser dies manufactured using known processes. In one embodiment, the method for coating the laser die includes placing the laser in an evacuated coating chamber before applying a first coating portion to a first facet of the laser. The first coating portion is applied to the first facet so as to form a protective covering thereon, but is applied at a coating energy that minimizes damage to the as-yet uncoated second facet. The laser is then rotated within the coating chamber, and a full coating is applied to a second facet of the laser. The laser is again rotated, and a full coating is applied atop the first coating portion to the first facet of the laser.

Abstract: Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.

Abstract: In one example, a DFB laser includes a substrate, an active region, and a grating. The active region is formed above the substrate and is designed to emit light having a gain peak wavelength. The grating is formed above the active region and is designed to provide optical feedback for light having a lasing peak wavelength. The gain peak wavelength is longer than the lasing peak wavelength and a difference between the gain peak wavelength and the lasing peak wavelength at room temperature is between 10 nm and 50 nm.

Abstract: Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.

Abstract: In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.

Abstract: In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.

Abstract: Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.

Abstract: A method for etching facets of a laser die prior to coating in such a way as to control the formation of oxides and metallic films on the facet is disclosed. In one embodiment, the method includes placing a wafer on which the laser is included in the interior volume of an etching chamber. Nitrogen is introduced into the interior volume to define a nitrogen-rich environment. The laser facet is then etched in the nitrogen-rich environment with argon delivered from an ion gun. In another embodiment, the method includes placing the laser in an ion beam etching chamber, then physically etching the facet of the laser with an ion beam that includes an argon/nitrogen mixture. The laser facet(s) can then be coated as desired. The etching method reduces the incidence of leakage current during operation of the laser die caused by metallic film formation on the facet before coating.

Abstract: Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.

Abstract: A laser diode having a composite passivation layer configured to control parasitic capacitance, especially in high speed laser applications, is disclosed. In one embodiment, a ridge waveguide laser is disclosed and includes: a substrate, an active layer disposed on the substrate, a ridge structure disposed on the active layer, and a contact layer disposed on the ridge structure. A composite passivation layer is disposed substantially laterally to the ridge structure. The composite passivation layer includes a silicon nitride bottom layer, a silicon nitride top layer, and a silicon dioxide middle layer interposed between the bottom and top layers. The passivation layers possess differing stress components that, when combined, cancel out the overall mechanical stress of the passivation layer. This enables relatively thick passivation layers to be employed in high speed laser diodes without increasing the risk of layer stress cracking and laser damage.

Abstract: In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.