Abstract: Disclosed are a liquid processing method, a liquid processing apparatus, and a recording medium that can prevent convex portions of a target substrate from collapsing when a rinsing liquid is dried. A base surface of a target substrate is hydrophilized and the surfaces of convex portions become water-repellent by surface-processing the target substrate which includes a main body, a plurality of convex portions protruding from the main body, and a base surface formed between the convex portions on the substrate main body. Next, a rinsing liquid is supplied to the target substrate which has been subjected to the surface processing. Thereafter, the rinsing liquid is removed from the target substrate.

Abstract: Disclosed are a liquid processing method, a liquid processing apparatus, and a recording medium that can prevent convex portions of a target substrate from collapsing when a rinsing liquid is dried. A base surface of a target substrate is hydrophilized and the surfaces of convex portions are water-repellentized by surface-processing the target substrate which includes a main body, a plurality of convex portions protruding from the main body, and a base surface formed between the convex portions on the substrate main body. Next, a rinsing liquid is supplied to the target substrate which has been subjected to the surface processing. Thereafter, the rinsing liquid is removed from the target substrate.

Abstract: A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.

Abstract: A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.

Abstract: A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.

Abstract: A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.

Abstract: A drive pulley is disposed to a driving motor. A plurality of follower pulleys are disposed to a rotating shaft of a spin chuck that vacuum sucks a substrate. A belt is passed from one follower pulley to the drive pulley. Belts are passed from the other follower pulleys to the drive shafts of a plurality of air motors. Since the air motors assist the driving of the driving motor, a large substrate can be rotated at a predetermined rotating acceleration. Thus, a film forming apparatus and a film forming method that allow the quantity of process solution supplied to be reduced and a film of process solution to be equally formed on a substrate can be provided.

Abstract: In processing a substrate, adsorption members provided on a table play an important role in whether “indirectly influenced marks” are left on the rear surface of the substrate. Groups of adsorption members are selected in a predetermined order for use in the adsorption operation. Adsorption at a first group of members is terminated before an “indirectly influenced mark” is left on the substrate, and another adsorption operation is initiated at a second group of members. In this manner, the substrate is held on the table by migrating adsorption sites on the rear surface of the substrate.

Abstract: A substrate is held on a spin chuck, and resist solution is supplied to the surface of the substrate at a plurality of positions spaced at predetermined intervals from a plurality of resist nozzles provided the bottom surface of a resist pipe provided over a first direction across the surface of the substrate. Thereafter, the substrate is oscillated or rotated, thereby making the resist solution on the substrate a thin coating film with a uniform thickness. In the coating apparatus and method, which are excellent in responsiveness to a degree of viscosity of coating solution, various kinds of treatment agents with a wide range of viscosity can be used, and mechanical accuracy such as the space between the nozzles and the substrate, accuracy of the nozzle size, and the like can be loosened.

Abstract: When a resist film formed on a substrate is exposed in a predetermined pattern and thereafter an exposed pattern is developed, a substance capable of decreasing fluidity of the developing solution is added to the developing solution, the developing solution to which the substance is added is caused to become low-fluid under a predetermined condition, the developing solution is applied onto the exposed resist film on the substrate, and thereafter a predetermined trigger is given to the developing solution to cause the developing solution to become high-fluid so as to allow developing to progress. Thereby, line width can be made uniform and defects do not tend to occur during coating of the developing solution.

Abstract: A substrate is held on a spin chuck, and resist solution is supplied to the surface of the substrate at a plurality of positions spaced at predetermined intervals from a plurality of resist nozzles provided the bottom surface of a resist pipe provided over a first direction across the surface of the substrate. Thereafter, the substrate is oscillated or rotated, thereby making the resist solution on the substrate a thin coating film with a uniform thickness. In the coating apparatus and method, which are excellent in responsiveness to a degree of viscosity of coating solution, various kinds of treatment agents with a wide range of viscosity can be used, and mechanical accuracy such as the space between the nozzles and the substrate, accuracy of the nozzle size, and the like can be loosened.

Abstract: A film forming apparatus comprising: a spin chuck; a cup; a lid; a first circular/tubular nozzle for supplying a resist solution to a first portion corresponding to the rotation center portion of a rectangular substrate; a plurality of second circular/tubular nozzles that supply the resist solution to a plurality of second portions of the rectangular substrate to which supply of the resist solution by centrifugal force is difficult, the distances between the rotation center portion and each of the second portions being greater than a half of a shorter side of the rectangular substrate; a rectangular nozzle holder that holds the first nozzle and the second nozzles; a mechanism that positions the nozzle holder; a controller that controls an amount of the resist solution from the first and second nozzles, attaches the lid to the cup, and rotates the substrate with the spin chuck; a resist solution tank; a supply tube provided between the resist solution tank and the first and second nozzles; a bellows pump for s

Abstract: A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.

Abstract: A drive pulley is disposed to a driving motor. A plurality of follower pulleys are disposed to a rotating shaft of a spin chuck that vacuum sucks a substrate. A belt is passed from one follower pulley to the drive pulley. Belts are passed from the other follower pulleys to the drive shafts of a plurality of air motors. Since the air motors assist the driving of the driving motor, a large substrate can be rotated at a predetermined rotating acceleration. Thus, a film forming apparatus and a film forming method that allow the quantity of process solution supplied to be reduced and a film of process solution to be equally formed on a substrate can be provided.

Abstract: A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.

Abstract: A drive pulley is disposed to a driving motor. A plurality of follower pulleys are disposed to a rotating shaft of a spin chuck that vacuum sucks a substrate. A belt is passed from one follower pulley to the drive pulley. Belts are passed from the other follower pulleys to the drive shafts of a plurality of air motors. Since the air motors assist the driving of the driving motor, a large substrate can be rotated at a predetermined rotating acceleration. Thus, a film forming apparatus and a film forming method that allow the quantity of process solution supplied to be reduced and a film of process solution to be equally formed on a substrate can be provided.

Abstract: A method of processing a substrate for forming a coating film on a substrate comprising the steps of (a) mounting a substrate on a temperature controlling means which is capable of having a heat influence on the substrate, and controlling temperature of the substrate by the temperature controlling means, (b) controlling temperature of a coating solution to be supplied to the substrate, (c) controlling temperature of a contact member in contact with the substrate when the substrate is transported and held, (d) detecting temperature of an atmosphere of a process space for applying the coating solution to the substrate, (e) setting a desired temperature on the basis of temperature/film-thickness data previously obtained by forming the coating film on the substrate, (f) controlling a temperature controlling operation of at least step (c) on the basis of the desired temperature set in the step (e) and the temperature detected in the step (d), and (g) applying the coating solution to the substrate.

Abstract: A method of processing a substrate for forming a coating film on a substrate comprising the steps of (a) mounting a substrate on a temperature controlling means which is capable of having a heat influence on the substrate, and controlling temperature of the substrate by the temperature controlling means, (b) controlling temperature of a coating solution to be supplied to the substrate, (c) controlling temperature of a contact member in contact with the substrate when the substrate is transported and held, (d) detecting temperature of an atmosphere of a process space for applying the coating solution to the substrate, (e) setting a desired temperature on the basis of temperature/film-thickness data previously obtained by forming the coating film on the substrate, (f) controlling a temperature controlling operation of at least step (c) on the basis of the desired temperature set in the step (e) and the temperature detected in the step (d), and (g) applying the coating solution to the substrate.

Abstract: When a resist film formed on a substrate is exposed in a predetermined pattern and thereafter an exposed pattern is developed, a substance capable of decreasing fluidity of the developing solution is added to the developing solution, the developing solution to which the substance is added is caused to become low-fluid under a predetermined condition, the developing solution is applied onto the exposed resist film on the substrate, and thereafter a predetermined trigger is given to the developing solution to cause the developing solution to become high-fluid so as to allow developing to progress. Thereby, line width can be made uniform and defects do not tend to occur during coating of the developing solution.

Abstract: When a resist film formed on a substrate is exposed in a predetermined pattern and thereafter an exposed pattern is developed, a substance capable of decreasing fluidity of the developing solution is added to the developing solution, the developing solution to which the substance is added is caused to become low-fluid under a predetermined condition, the developing solution is applied onto the exposed resist film on the substrate, and thereafter a predetermined trigger is given to the developing solution to cause the developing solution to become high-fluid so as to allow developing to progress. Thereby, line width can be made uniform and defects do not tend to occur during coating of the developing solution.