Abstract: The present invention provides a conductive silica sol composition containing at least a silica sol composition, and at least one selected from perfluoroalkyl sulfonates perfluoroalkyl sulfone imide salts, and bis(fluorosulfonyl) imide salts.

Abstract: Disclosed is a positive electrode forming material for a positive electrode of a battery, the material including particles of a positive electrode active material and fine carbon fibers adhering to surfaces of particles of the positive electrode active material in a shape of a network. The positive electrode active material is preferably fine particles having an average particle diameter of 0.03 to 40 ?m. Each of the fine carbon fibers is preferably carbon nanofiber having an average fiber diameter of 1 to 100 nm and an aspect ratio of 5 or greater. The carbon nanofiber is surface-oxidized. The positive electrode forming material includes a binder. The content of the fine carbon fibers is 0.5 to 15 parts by mass and the content of the binder is 0.5 to 10 parts by mass with respect to 100 parts by mass of the positive electrode active material.

Abstract: The present invention provides a conductive silica sol composition containing at least a silica sol composition, and at least one selected from perfluoroalkyl sulfonates perfluoroalkyl sulfone imide salts, and bis(fluorosulfonyl) imide salts.

Abstract: Disclosed is a positive electrode forming material for a positive electrode of a battery, the material including particles of a positive electrode active material and fine carbon fibers adhering to surfaces of particles of the positive electrode active material in a shape of a network. The positive electrode active material is preferably fine particles having an average particle diameter of 0.03 to 40 ?m. Each of the fine carbon fibers is preferably carbon nanofiber having an average fiber diameter of 1 to 100 nm and an aspect ratio of 5 or greater. The carbon nanofiber is surface-oxidized. The positive electrode forming material includes a binder. The content of the fine carbon fibers is 0.5 to 15 parts by mass and the content of the binder is 0.5 to 10 parts by mass with respect to 100 parts by mass of the positive electrode active material.

Abstract: Each of the metal nano-particles present in a dispersion, which comprises at least one metal selected from the group consisting of precious metals and transition metals or an alloy of at least two metals selected from the foregoing metals, comprises a metal particle in which an organic metal compound of a fatty acid and/or an amine-metal complex is adhered to the periphery of the metal particle. This organic metal compound and the amine-metal complex are admixed together in a solvent and then the resulting mixture is subjected to a reducing treatment to thus form a dispersion containing metal nano-particles in a concentration of not less than 5% by mass and not more than 90% by mass. The resulting dispersion is applied onto the surface of a base material, followed by drying the applied layer of the dispersion and then firing the dried layer of the dispersion at a low temperature to thus form a thin metallic wire or a metal film having conductivity.

Abstract: A metal thin film-forming method which comprises the step of firing metal nanoparticles each comprising a particle consisting of at least one metal selected from Ag, Au, Ni, Pd, Rh, Ru, and Pt or an alloy comprising at least two of these metals and an organic substance adhered to the periphery thereof as a dispersant, under a gas atmosphere containing water and/or an organic acid to thus form a metal thin film. This metal thin film possesses a low resistance value.

Abstract: Each of the metal nano-particles present in a dispersion, which comprises at least one metal selected from the group consisting of precious metals and transition metals or an alloy of at least two metals selected from the foregoing metals, comprises a metal particle in which an organic metal compound of a fatty acid and/or an amine-metal complex is adhered to the periphery of the metal particle. This organic metal compound and the amine-metal complex are admixed together in a solvent and then the resulting mixture is subjected to a reducing treatment to thus form a dispersion containing metal nano-particles in a concentration of not less than 5% by mass and not more than 90% by mass. The resulting dispersion is applied onto the surface of a base material, followed by drying the applied layer of the dispersion and then firing the dried layer of the dispersion at a low temperature to thus form a thin metallic wire or a metal film having conductivity.

Abstract: To the surface of a base material, there is applied, a dispersion containing fine particles of at least one metal selected from the group consisting of indium, tin, antimony, aluminum and zinc, fine particles of at least one alloy consisting of at least two metals specified above or a mixture of these fine particles, the coated layer is then fired in a vacuum atmosphere, an inert gas atmosphere, a reducing atmosphere; and subsequently the layer is fired in an oxidizing atmosphere. After this firing step in an oxidizing atmosphere, the coated layer may further be fired in a reducing atmosphere. The inert gas atmosphere is one comprising at least one inert gas selected from the group consisting of rare gases, carbon dioxide and nitrogen and the reducing atmosphere is one comprising at least one reducing gas selected from the group consisting of hydrogen, carbon monoxide and lower alcohols. A transparent electrode is composed of a transparent conductive film prepared according to the foregoing method.

Abstract: The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (PbV CaW SrX LaY)(ZrZ Ti1−Z)O3, wherein 0.9≦V≦1.3, 0≦W≦0.1, 0≦X≦0.1, 0<Y≦0.1, 0<Z≦0.

Abstract: The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (Pbv Caw SrX LaY)(ZrZ Ti1−Z)O3, wherein 0.9≦V≦1.3, 0≦W≦0.1, 0≦X≦0.1, 0<Y≦0.1, 0<Z≦0.

Abstract: A composition for forming a film, comprising a solution of metal compounds in an organic solvent, wherein a molar ratio of metals in said solution is (Sr.sub.1-n R.sub.n):Bi:(Ta.sub.Y Nb.sub.1-Y)=X:Q:2, R is at least one element selected from the group consisting of La, Ce, Pr, Nd, Eu, Sm, Tb, Gd and Er, and 0<n.ltoreq.0.1, 0.4.ltoreq.X<1, 0.ltoreq.Y.ltoreq.1 and 1.5.ltoreq.Q.ltoreq.3.5, can be used to form a ferroelectric film. This ferroelectric film is useful in a ferroelectric capacitor, particularly a ferroelectric capacitor for a non-volatile memory.

Abstract: A composition for forming a metal oxide thin film pattern which is a solution containing one or more hydrolytic metal compounds selected from the group consisting of hydrolytic organometallic compounds (e.g., metal alkoxide) and metal halides, and a water generating agent which frees water under the effect of irradiation with active rays (e.g., o-nitrobenzyl alcohol and 2-nitroethanol) and, as required, an acid generating agent which frees acid under the effect of irradiation with active rays is disclosed. A thin film pattern is formed by coating the composition onto a substrate, irradiating active rays for forming an image on the resultant photosensitive coating film, developing the same with water or an alcoholic solvent to remove the non-exposed portion, and heat-treating the substrate to convert the remaining film into a metal oxide, thereby forming a negative-type metal oxide thin film pattern.

Abstract: Dielectrics represented by (Sr.sub.x Bi.sub.1-x)Bi.sub.2 Ta.sub.2 O.sub.y, wherein 0<x<1, and y represents the total number of oxygen atoms bonded to the respective metals, and thin films thereof, can be prepared by repeating the steps of applying compositions for forming the Sr--Bi--Ta--O-based dielectric thin films on substrates, drying and conducting a first-firing a plurality of times until the desired film thickness is achieved, and then conducting a second-firing for crystallization and compositions for forming Bi-based ferroelectric thin films and target materials for forming Bi-based ferroelectric thin films, both represented by the metal composition ((Sr.sub.a (Ba.sub.b, Pb.sub.c)).sub.x Bi.sub.y (Ta and/or Nb).sub.z wherein 0.4.ltoreq.X<1.0, 1.5.ltoreq.Y.ltoreq.3.5, Z=2, 0.7X.ltoreq.a<X, and 0<b+c.ltoreq.0.

Abstract: A composition comprising Ba and Sr salts of carboxylic acids represented by the formula: C.sub.n H.sub.2n+1 COOH wherein 3.ltoreq.n.ltoreq.7, and having structures represented by the following formula (I): ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 each represent a hydrogen atom, a methyl group or an ethyl group, and M represents Ba or Sr, can be used to form thin films of Ba.sub.1-x Sr.sub.x Ti.sub.y O.sub.3. A composition comprising a barium carboxylate, a strontium carboxylate and a titanium alkoxide in a mixed solvent of a carboxylic acid and an ester, can also be used to form Ba.sub.1-x Sr.sub.x Ti.sub.y O.sub.3 thin films. The proportion of the mixed solvent is 2-11 molar times as much as the Ti. A composition comprising salts of carboxylic acids represented by R.sup.a COOH wherein R.sup.a is a linear or branched alkyl group having 3-7 carbon atoms, as the Ba and Sr sources, and Ti(OR.sup.b).sub.4 wherein R.sup.

Abstract: A composition for forming a metal oxide thin film pattern which is a solution containing one or more hydrolytic metal compounds selected from the group consisting of hydrolytic organometallic compounds (e.g., metal alkoxide) and metal halides, and a water generating agent which frees water under the effect of irradiation with active rays (e.g., o-nitrobenzyl alcohol and 2-nitroethanol) and, as required, an acid generating agent which frees acid under the effect of irradiation with active rays is disclosed. A thin film pattern is formed by coating the composition onto a substrate, irradiating active rays for forming an image on the resultant photosensitive coating film, developing the same with water or an alcoholic solvent to remove the non-exposed portion, and heat-treating the substrate to convert the remaining film into a metal oxide, thereby forming a negative-type metal oxide thin film pattern.

Abstract: A pattern of a non-volatile high-performance ferroelectric thin film memory is formed by applying a composition containing hydrolytic metal compounds, and a photosensitizer which generates water when irradiated with active rays onto a substrate. The resultant film is exposed to active rays in compliance with a prescribed pattern to form an image and developed with a solvent to remove non-exposed portions, and then the remaining exposed portions are subjected to a heat treatment to convert the exposed portions into a dielectric substance comprising a metal oxide as expressed by the following formula (I):(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m O.sub.3m+1).sup.2-(I)where A is one or more elements selected from the group consisting of Ba, Sr, Pb and Bi; B is one or more elements selected from the group consisting of Ti, Nb and Ta; and m is an integer of from 2 to 5.