Abstract: A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer. The conductive contact comprises a top side facing away from the lower side of the III-N layer, and a bottom side facing towards the lower side of the III-N layer. The bottom side includes a first end and a second end opposite the first end, a first side rising from the first end to an intermediate point closer to the top side than the first end, and a second side falling from the intermediate point to the second end further from the top side than the intermediate point.

Abstract: A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer. The conductive contact comprises a top side facing away from the lower side of the III-N layer, and a bottom side facing towards the lower side of the III-N layer. The bottom side includes a first end and a second end opposite the first end, a first side rising from the first end to an intermediate point closer to the top side than the first end, and a second side falling from the intermediate point to the second end further from the top side than the intermediate point.

Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

Abstract: A transistor circuit includes a first high electron mobility transistor and a second high electron mobility transistor having a negative threshold voltage, wherein a source of the second high electron mobility transistor is coupled to a gate of the first high electron mobility transistor, and a gate of the second high electron mobility transistor is coupled to a source of the first high electron mobility transistor.

Abstract: A semiconductor device includes a first transistor including a GaN-based semiconductor stacked structure formed over a substrate, a first gate electrode having a plurality of first fingers over the semiconductor stacked structure, a plurality of first drain electrodes provided along the first fingers, and a plurality of first source electrodes provided along the first fingers; a second transistor including the semiconductor stacked structure, a second gate electrode having a plurality of second fingers over the semiconductor stacked structure, the second drain electrodes provided along the second fingers, and a plurality of second source electrodes provided along the second fingers; a drain pad provided over or under the first drain electrodes, and coupled to the first drain electrodes; a source pad provided over or under the second source electrodes, and coupled to the second source electrodes; and a common pad coupled to the first source electrodes and the second drain electrodes.

Abstract: A transistor circuit includes a first high electron mobility transistor and a second high electron mobility transistor having a negative threshold voltage, wherein a source of the second high electron mobility transistor is coupled to a gate of the first high electron mobility transistor, and a gate of the second high electron mobility transistor is coupled to a source of the first high electron mobility transistor.

Abstract: A transistor circuit includes a first high electron mobility transistor and a second high electron mobility transistor having a negative threshold voltage, wherein a source of the second high electron mobility transistor is coupled to a gate of the first high electron mobility transistor, and a gate of the second high electron mobility transistor is coupled to a source of the first high electron mobility transistor.

Abstract: A semiconductor device includes a first transistor including a GaN-based semiconductor stacked structure formed over a substrate, a first gate electrode having a plurality of first fingers over the semiconductor stacked structure, a plurality of first drain electrodes provided along the first fingers, and a plurality of first source electrodes provided along the first fingers; a second transistor including the semiconductor stacked structure, a second gate electrode having a plurality of second fingers over the semiconductor stacked structure, the second drain electrodes provided along the second fingers, and a plurality of second source electrodes provided along the second fingers; a drain pad provided over or under the first drain electrodes, and coupled to the first drain electrodes; a source pad provided over or under the second source electrodes, and coupled to the second source electrodes; and a common pad coupled to the first source electrodes and the second drain electrodes.

Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

Abstract: A method for fabricating a semiconductor device comprises the steps of: forming interconnection grooves 38 in an inter-layer insulation film 34; forming an interconnection layer 44 of Cu as the main material in the interconnection grooves 38; and concurrently injecting nitrogen gas and water to the surface of the interconnection layer 44 buried in the interconnection groove 38.

Abstract: The semiconductor device comprises on a semiconductor substrate an insulating structure formed of a plurality of insulating films; an interconnection structure buried in the insulating structure and formed of a plurality of conducting layers; and a plurality of dummy patterns formed of the same conducting layer as the conducting layers forming the interconnection structure and buried in a surface side of the respective insulating films, and the dummy patterns near the interconnection structure are connected with each other through via portions. Thus, the insulating structure near the interconnection structure are reinforced, and the generation of cracks and peelings in the interfaces between the insulating films or in the inter-layer insulating films due to mechanical stresses or thermal stresses can be prevented.

Abstract: The semiconductor device comprises on a semiconductor substrate an insulating structure formed of a plurality of insulating films; an interconnection structure buried in the insulating structure and formed of a plurality of conducting layers; and a plurality of dummy patterns formed of the same conducting layer as the conducting layers forming the interconnection structure and buried in a surface side of the respective insulating films, and the dummy patterns near the interconnection structure are connected with each other through via portions. Thus, the insulating structure near the interconnection structure are reinforced, and the generation of cracks and peelings in the interfaces between the insulating films or in the inter-layer insulating films due to mechanical stresses or thermal stresses can be prevented.

Abstract: A method for fabricating a semiconductor device comprises the steps of: forming interconnection grooves 38 in an inter-layer insulation film 34; forming an interconnection layer 44 of Cu as the main material in the interconnection grooves 38; and concurrently injecting nitrogen gas and water to the surface of the interconnection layer 44 buried in the interconnection groove 38.

Abstract: The semiconductor device comprises an insulating film 114 formed mainly of a film of polyallyl ether resin; an interconnection structure 116 buried in the insulating film 114, and having a via portion buried in a groove-shaped via hole and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended beyond the via portion; an insulating film 118 formed on the insulating film 114 with the interconnection structure 116 buried in and formed mainly of a film of organosilicate glass; and an interconnection structure 120 buried in the insulating film 118 and connected to the interconnection structure 116. Thus, the stresses to be exerted to the insulating films are decreased, the generation of cracks and peelings generated in the interfaces between the insulating films and in the insulating films due to the stresses generated at the ends of the interconnection structures can be effective prevented.

Abstract: The semiconductor device comprises an insulating film 114 formed mainly of a film of polyallyl ether resin; an interconnection structure 116 buried in the insulating film 114, and having a via portion buried in a groove-shaped via hole and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended beyond the via portion; an insulating film 118 formed on the insulating film 114 with the interconnection structure 116 buried in and formed mainly of a film of organosilicate glass; and an interconnection structure 120 buried in the insulating film 118 and connected to the interconnection structure 116. Thus, the stresses to be exerted to the insulating films are decreased, the generation of cracks and peelings generated in the interfaces between the insulating films and in the insulating films due to the stresses generated at the ends of the interconnection structures can be effective prevented.

Abstract: The semiconductor device comprises on a semiconductor substrate an insulating structure formed of a plurality of insulating films; an interconnection structure buried in the insulating structure and formed of a plurality of conducting layers; and a plurality of dummy patterns formed of the same conducting layer as the conducting layers forming the interconnection structure and buried in a surface side of the respective insulating films, and the dummy patterns near the interconnection structure are connected with each other through via portions. Thus, the insulating structure near the interconnection structure are reinforced, and the generation of cracks and peelings in the interfaces between the insulating films or in the inter-layer insulating films due to mechanical stresses or thermal stresses can be prevented.

Abstract: A semiconductor device has: a semiconductor substrate; a number of semiconductor elements formed on the semiconductor substrate; a plurality of lower level wiring layers electrically connected to the semiconductor elements; a plurality of first insulating layers electrically separating the lower level wiring layers and having a first dielectric constant; a plurality of middle level wiring layers electrically connected to the lower level wiring layers; a plurality of second insulating layers electrically separating the middle level wiring layers and having a second dielectric constant larger than the first dielectric constant; a plurality of upper level wiring layers electrically connected to the middle level wiring layers; a plurality of third insulating layers electrically separating the upper level wiring layers and having a third dielectric constant larger than the second dielectric constant. A multilevel wiring structure is provided which has a high performance and a high reliability.

Abstract: A first insulating film is formed on an underlying substrate, the first insulating film being made of a first insulating material. A second insulating film is formed on the first insulating film, the second insulating film being made of a second insulating material different from the first insulating material. A trench is formed through the second and first insulating film, the trench reaching at least an intermediate depth of the first insulating film. A wiring layer made of a conductive material is deposited on the second insulating film, the wiring layer burying the trench. The wiring layer is polished to leave the wiring layer in the trench. The wiring layer and second insulating film are polished until the first insulating film is exposed. Irregularity such as dishing and erosion can be suppressed from being formed.