Abstract: A space cleaning system includes: a detection unit configured to detect generation and a generation position of an infectious substance in a space; an airflow control unit configured to generate an airflow towards the generation position detected in response to detection of the generation of the infectious substance; and a cleaning control unit configured to clean the space at least after the generation of the infectious substance is detected.

Abstract: A microfluidic device includes a flow path through which a reaction solution flows, and an introducing portion for introducing the reaction solution into the flow path, wherein the flow path passes alternately and repeatedly several times through a first temperature region and a second temperature region having different predetermined temperatures, and the flow path includes the repeating unit portions passing through the first temperature region and the second temperature region, the repeating unit portions having decreasing lengths as the repeating unit portions are located farther away from the introducing portion.

Abstract: A microfluidic device includes a flow path through which a reaction solution flows, and an introducing portion for introducing the reaction solution into the flow path, wherein the flow path passes alternately and repeatedly several times through a first temperature region and a second temperature region having different predetermined temperatures, and the flow path includes the repeating unit portions passing through the first temperature region and the second temperature region, the repeating unit portions having decreasing lengths as the repeating unit portions are located farther away from the introducing portion.

Abstract: An organic EL panel includes a first substrate, a first electrode disposed on the first substrate, an organic layer including a light emitting layer and disposed on the first electrode, a second electrode disposed on the organic layer, and an auxiliary electrode stacked on the first electrode. The auxiliary electrode includes a linear portion and a curved portion, and the curved portion has a greater line width than the linear portion.

Abstract: An organic EL panel includes a first substrate, a first electrode disposed on the first substrate, an organic layer including a light emitting layer and disposed on the first electrode, a second electrode disposed on the organic layer, and an auxiliary electrode stacked on the first electrode. The auxiliary electrode includes a linear portion and a curved portion, and the curved portion has a greater line width than the linear portion.

Abstract: An organic electroluminescent element is provided with a light transmissive substrate, a light transmissive electrode, a counter electrode paired with the light transmissive electrode, a sealing substrate facing the light transmissive substrate, an organic light emitting layer, and a resin structure. The organic light-emitting layer is disposed between the light transmissive electrode and the counter electrode. The organic light emitting layer is sealed with the light transmissive substrate and the sealing substrate. The resin structure is disposed between the light transmissive electrode and the light transmissive substrate. The resin structure is composed of a plurality of resin layers including a high refractive index layer and a low refractive index layer with different refractive indices. The high refractive index layer contains a physisorption-based moisture-absorbing material.

Abstract: An organic electroluminescent element is provided with a light transmissive substrate, a light transmissive electrode, a counter electrode paired with the light transmissive electrode, a sealing substrate facing the light transmissive substrate, an organic light emitting layer, and a resin structure. The organic light-emitting layer is disposed between the light transmissive electrode and the counter electrode. The organic light emitting layer is sealed with the light transmissive substrate and the sealing substrate. The resin structure is disposed between the light transmissive electrode and the light transmissive substrate. The resin structure is composed of a plurality of resin layers including a high refractive index layer and a low refractive index layer with different refractive indices. The high refractive index layer contains a physisorption-based moisture-absorbing material.

Abstract: The organic electroluminescent element has a transparent substrate, a transparent first electrode, an organic layer, a second electrode, and a light-outcoupling layer. The light-outcoupling layer is formed between the transparent substrate and the first electrode. The first electrode, the organic layer and the second electrode constitute an electroluminescent laminate. A covering substrate facing the transparent substrate is adhered to the surface of the transparent substrate via an adhesive sealing portion surrounding the periphery of the electroluminescent laminate. A connection electrode extending outward from inside a surrounded region where the electroluminescent laminate is covered with the covering substrate is formed at least on the surface of the light-outcoupling layer. The average thickness of the light-outcoupling layer in an adhesion region where the adhesive sealing portion is formed is smaller than the thickness in the central region where the electroluminescent laminate is formed.

Abstract: The organic electroluminescent element has a transparent substrate, a transparent first electrode, an organic layer, a second electrode, and a light-outcoupling layer. The light-outcoupling layer is formed between the transparent substrate and the first electrode. The first electrode, the organic layer and the second electrode constitute an electroluminescent laminate. A covering substrate facing the transparent substrate is adhered to the surface of the transparent substrate via an adhesive sealing portion surrounding the periphery of the electroluminescent laminate. A connection electrode extending outward from inside a surrounded region where the electroluminescent laminate is covered with the covering substrate is formed at least on the surface of the light-outcoupling layer. The average thickness of the light-outcoupling layer in an adhesion region where the adhesive sealing portion is formed is smaller than the thickness in the central region where the electroluminescent laminate is formed.

Abstract: The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

Abstract: The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

Abstract: A lighting device comprising a hermetically sealed vessel having a light transmissive property, a gas filled in the hermetically sealed vessel and configured to emit a first light having wavelength when excited by electron, the wavelength of the first light has a range from vacuum ultraviolet to visual light, an electron source disposed within the hermetically sealed vessel, the electron source configured to emit the electron when an operation voltage is applied, anode electrode disposed within the hermetically sealed vessel, a phosphor configured to emit the second light when excited by the first light. The electron source is configured to emit the electron having energy distribution when the electron source receives the emission voltage. The energy distribution having a peak energy. The peak energy is higher than an excitation energy of the gas. The peak energy is lower than an ionization energy of the gas.

Abstract: Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes.

Abstract: An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.

Abstract: An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.

Abstract: An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of pads 4 for energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

Abstract: A field emission-type electron source has a plurality of electron source elements (10a) formed on the side of one surface (front surface) of an insulative substrate (11) composed of a glass substrate. Each of electron source elements (10a) includes a lower electrode (12), a buffer layer (14) composed of an amorphous silicon layer formed on the lower electrode (12), a polycrystalline silicon layer (3) formed on the buffer layer (14), a strong-field drift layer (6) formed on the polycrystalline silicon layer (3), and a surface electrode (7) formed on the strong-field drift layer (6). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.

Abstract: In the infrared radiation element (A), a heat insulating layer 2, which has sufficiently smaller thermal conductivity than a semiconductor substrate 1, is formed on a surface in the thickness direction of the semiconductor substrate 1, and a heating layer 3, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer 2, is formed on the heat insulating layer 2, and a pair of pads 4 for energization are formed on the heating layer 3. The semiconductor substrate 1 is made of a silicon substrate. The heat insulating layer 2 and the heating layer 3 are formed by porous silicon layers having different porosities from each other, and the heating layer 3 has smaller porosity than the heat insulating layer 2. By using the infrared radiation element (A) as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

Abstract: A field emission-type electron source has a plurality of electron source elements (10a) formed on the side of one surface (front surface) of an insulative substrate (11) composed of a glass substrate. Each of electron source elements (10a) includes a lower electrode (12), a buffer layer (14) composed of an amorphous silicon layer formed on the lower electrode (12), a polycrystalline silicon layer (3) formed on the buffer layer (14), a strong-field drift layer (6) formed on the polycrystalline silicon layer (3), and a surface electrode (7) formed on the strong-field drift layer (6). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.

Abstract: Disclosed is an electron source 10 including an electron source element 10a formed on the side of one surface of an insulative substrate 1. The electron source element 10a includes a lower electrode 2, a composite nanocrystal layer 6 and a surface electrode 7. The composite nanocrystal layer 6 includes a plurality of polycrystalline silicon grains 51, a thin silicon oxide film 52 formed over the surface of each of the grains 51, a number of nanocrystalline silicons 63 residing between the adjacent grains 51, and a silicon oxide film 64 formed over the surface of each of the nanocrystalline silicons 63. The silicon oxide film 64 is an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon 63. The surface electrode 7 is formed of a carbon thin film 7a laminated on the composite nanocrystal layer 6 while being in contact therewith, and a metal thin film 7b laminated on the carbon thin film 7a.