Abstract: A method for manufacturing an optical modulator is disclosed. The optical modulator includes a Mach-Zehnder modulator, the Mach-Zehnder modulator including an electrode and an arm waveguide, the electrode being provided on the arm waveguide. The method includes a step of preparing the Mach-Zehnder modulator, a step of acquiring a relationship between a voltage applied to the electrode and a phase change amount of light propagating through the arm waveguide based on a light transmittance in the arm waveguide, a step of acquiring a voltage in which a range of a phase change amount of light in the Mach-Zehnder modulator has a predetermined range based on the relationship, and a step of storing the voltage in a storage unit.

Abstract: A method of manufacturing an optical filter is a method of manufacturing an optical filter including two or more waveguides having four or more sections in which a number of modes of light propagating through the four or more sections is two or more. The method includes designing lengths of the four or more sections, and forming the two or more waveguides based on the lengths of the four or more sections. The designing includes designing the lengths of the four or more sections based on differentiation of propagation constants of the sections with respect to a temperature and widths of the sections.

Abstract: It is an object to provide an optical filter, a method of manufacturing an optical filter, a method of designing, a design apparatus, and a program for designing non-transitory computer-readable recording medium which can suppress both the temperature dependency and the waveguide length. An optical filter includes three or more waveguides, and a plurality of sections provided in the three or more waveguides, respectively. Modes of light propagating through the sections of the three or more waveguides are different from each other.

Abstract: An optical filter includes a ring resonator, an optical waveguide configured to be optically coupled to the ring resonator, and a heater provided at the ring resonator. The ring resonator includes a first curved portion. The optical waveguide includes a second curved portion. The first curved portion and the second curved portion are configured to form a directional coupler. The heater is disposed above the directional coupler.

Abstract: A method of controlling a wavelength tunable laser device including a substrate and a plurality of semiconductor elements. A plurality of first optical waveguides are provided in the substrate. The plurality of semiconductor elements are formed of a III-V group compound semiconductor, have optical gains, and are optically coupled to the plurality of first optical waveguides of the substrate. Wavelengths with which gains of the plurality of semiconductor elements reach peaks differ from one another. The method includes, selecting a first optical waveguide configured to transmit light from among the plurality of first optical waveguides, and causing light to be emitted from a first semiconductor element that is a semiconductor element optically coupled to the selected first optical waveguide among the plurality of semiconductor elements.

Abstract: A wavelength tunable laser device includes a substrate, a plurality of first optical waveguides provided in the substrate, and a plurality of semiconductor elements bonded on a surface of the substrate and on the plurality of first optical waveguides. The semiconductor elements are formed of a III-V group compound semiconductor and have optical gains. Wavelengths with which the optical gains of the plurality of semiconductor elements reach peaks differ from one another.

Abstract: A method for manufacturing an optical modulator is disclosed. The method includes a step of preparing a Mach-Zehnder modulator, a step of acquiring, based on a light transmittance in an arm waveguide, a relationship between a voltage applied to an electrode and a phase change amount of light propagating through the arm waveguide, a step of acquiring, based on the relationship, a voltage in which the phase change amount of the light propagating through the arm waveguide has a predetermined when the light is modulated, and a step of storing the voltage in a storage unit.

Abstract: An optical transmitter includes a Mach-Zehnder modulator having an arm waveguide and a phase controller configured to control a phase of a light propagating through the arm waveguide by applying a voltage to the Mach-Zehnder modulator. When the voltage is deviated from a predetermined range, the phase controller shifts the voltage in the direction opposite to a direction of the deviation from the predetermined range by the amount corresponding to a change of 2? in the phase.

Abstract: A method for manufacturing an optical modulator is disclosed. The method includes a step of preparing a Mach-Zehnder modulator, a step of acquiring, based on a light transmittance in an arm waveguide, a relationship between a voltage applied to an electrode and a phase change amount of light propagating through the arm waveguide, a step of acquiring, based on the relationship, a voltage in which the phase change amount of the light propagating through the arm waveguide has a predetermined when the light is modulated, and a step of storing the voltage in a storage unit.

Abstract: A method for manufacturing an optical modulator is disclosed. The optical modulator includes a Mach-Zehnder modulator, the Mach-Zehnder modulator including an electrode and an arm waveguide, the electrode being provided on the arm waveguide. The method includes a step of preparing the Mach-Zehnder modulator, a step of acquiring a relationship between a voltage applied to the electrode and a phase change amount of light propagating through the arm waveguide based on a light transmittance in the arm waveguide, a step of acquiring a voltage in which a range of a phase change amount of light in the Mach-Zehnder modulator has a predetermined range based on the relationship, and a step of storing the voltage in a storage unit.

Abstract: An optical modulator includes a waveguide formed of a semiconductor and configured to allow light to propagate therethrough; a first electrode disposed on the waveguide and electrically connected to the waveguide; and a second electrode separated from the waveguide and electrically connected to the waveguide. An edge of the second electrode on a light entry side is located downstream of an edge of the first electrode on the light entry side in a propagation direction of the light.

Abstract: An optical transmitter includes a Mach-Zehnder modulator having an arm waveguide and a phase controller configured to control a phase of a light propagating through the arm waveguide by applying a voltage to the Mach-Zehnder modulator. When the voltage is deviated from a predetermined range, the phase controller shifts the voltage in the direction opposite to a direction of the deviation from the predetermined range by the amount corresponding to a change of 2? in the phase.

Abstract: Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.

Abstract: An electronic module includes a substrate having flexibility and an electrical insulation property, a circuit unit in which an electronic device is mounted on a wiring pattern formed on at least any one of surfaces of the substrate, and a resin body in which the circuit unit is sealed with an electrical insulating resin, wherein the substrate has flexibility to be deformable due to a pressure during sealing with the electrical insulating resin.

Abstract: An optical modulator includes: a waveguide made of semiconductor, a light being input to one of ends of the waveguide; and a first electrode provided on the waveguide and overlapping with a part of the waveguide, wherein the waveguide has a first region to a third region along a propagation direction of the light from the one of ends, wherein neither the first region nor a part of the second region on a side of the first region in the propagation direction overlaps with the first electrode, wherein the third region and a part of the second region on a side of the third region in the propagation direction overlap with the first electrode, wherein a second width of the second region is larger than a first width of the first region and a third width of the third region.

Abstract: An optical modulator includes a waveguide formed of a semiconductor and configured to allow light to propagate therethrough; a first electrode disposed on the waveguide and electrically connected to the waveguide; and a second electrode separated from the waveguide and electrically connected to the waveguide. An edge of the second electrode on a light entry side is located downstream of an edge of the first electrode on the light entry side in a propagation direction of the light.

Abstract: A method of producing an alkoxyflavone derivative involves a step of reacting hydroxyflavone derivative which is shown in the below chemical formula and dialkyl sulfate in the presence of dimethyl sulfoxide and an alkali hydroxide. Further, in the chemical formula below, R11-R14, R21-R25 and R3 are independently one of hydrogen, hydroxyl group, ester group, alkoxy group, alkylenedioxy group, sulfonyl group and alkyl group, respectively. However, at least two of R21-R25 and R3 are hydroxyl groups.

Abstract: An optical modulator includes: a waveguide made of semiconductor, a light being input to one of ends of the waveguide; and a first electrode provided on the waveguide and overlapping with a part of the waveguide, wherein the waveguide has a first region to a third region along a propagation direction of the light from the one of ends, wherein neither the first region nor a part of the second region on a side of the first region in the propagation direction overlaps with the first electrode, wherein the third region and a part of the second region on a side of the third region in the propagation direction overlap with the first electrode, wherein a second width of the second region is larger than a first width of the first region and a third width of the third region.

Abstract: An electronic module includes a substrate having flexibility and an electrical insulation property, a circuit unit in which an electronic device is mounted on a wiring pattern formed on at least any one of surfaces of the substrate, and a resin body in which the circuit unit is sealed with an electrical insulating resin, wherein the substrate has flexibility to be deformable due to a pressure during sealing with the electrical insulating resin.

Abstract: Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.