Abstract: A ground pad is disposed on a substrate. A plurality of transistors, each grounded at an emitter thereof, are in a first direction on a surface of the substrate. An input line connected to bases of the transistors is on the substrate. At least two shunt inductors are each connected at one end thereof to the input line and connected at the other end thereof to the ground pad. In the first direction, the two shunt inductors are on opposite sides of a center of a region where the transistors are arranged.

Abstract: A power amplifier device includes a semiconductor substrate; a plurality of first transistors that are provided on the semiconductor substrate and receive input of a radio-frequency signal; a plurality of second transistors that are provided on the semiconductor substrate and electrically connected to the respective plurality of first transistors, and output a radio-frequency output signal obtained by amplifying the radio-frequency signal; a plurality of first bumps provided so as to overlay the respective plurality of first transistors; and a second bump provided away from the plurality of first bumps and provided so as not to overlay the plurality of first transistors and the plurality of second transistors. When viewed in plan from a direction perpendicular to a surface of the semiconductor substrate, a first transistor and a first bump, a second transistor, the second bump, a second transistor, and a first transistor and a first bump are arranged in sequence.

Abstract: A ground pad is disposed on a substrate. A plurality of transistors, each grounded at an emitter thereof, are in a first direction on a surface of the substrate. An input line connected to bases of the transistors is on the substrate. At least two shunt inductors are each connected at one end thereof to the input line and connected at the other end thereof to the ground pad. In the first direction, the two shunt inductors are on opposite sides of a center of a region where the transistors are arranged.

Abstract: A radio communication device includes a power amplifier having a semiconductor device formed with a plurality of unit transistors. Base electrodes of the unit transistors are connected with each other by a base line, and an input capacitor is connected to the base line such that the input capacitor is commonly and electrically connected to the base electrodes of a plurality of the unit transistors.

Abstract: A semiconductor apparatus includes multiple field effect transistors provided between an antenna terminal to be connected to an antenna and multiple external terminals through which RF signals are capable of being supplied and a voltage generating circuit. When the field effect transistors provided between one of the multiple external terminals and the antenna terminal are turned off, the voltage generating unit charges a capacitor via a resistor circuit by switching the polarity of the RF signal to be supplied to the other external terminal with respect to the control signal and outputs a voltage based on a sum of the charge voltage and the voltage of the control signal as the gate drive voltage. The resistor circuit includes a first resistor including positive temperature characteristics and a second resistor including negative temperature characteristics.

Abstract: A radio communication device includes a power amplifier having a semiconductor device formed with a plurality of unit transistors. Base electrodes of the unit transistors are connected with each other by a base line, and an input capacitor is connected to the base line such that the input capacitor is commonly and electrically connected to the base electrodes of a plurality of the unit transistors.

Abstract: A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.

Abstract: A semiconductor apparatus includes multiple field effect transistors provided between an antenna terminal to be connected to an antenna and multiple external terminals through which RF signals are capable of being supplied and a voltage generating circuit. When the field effect transistors provided between one of the multiple external terminals and the antenna terminal are turned off, the voltage generating unit charges a capacitor via a resistor circuit by switching the polarity of the RF signal to be supplied to the other external terminal with respect to the control signal and outputs a voltage based on a sum of the charge voltage and the voltage of the control signal as the gate drive voltage. The resistor circuit includes a first resistor including positive temperature characteristics and a second resistor including negative temperature characteristics.

Abstract: A technology is provided so that RF modules used for cellular phones etc. can be reduced in size. Over a wiring board constituting an RF module, there are provided a first semiconductor chip in which an amplifier circuit is formed and a second semiconductor chip in which a control circuit for controlling the amplifier circuit is formed. A bonding pad over the second semiconductor chip is connected with a bonding pad over the first semiconductor chip directly by a wire without using a relay pad. In this regard, the bonding pad formed over the first semiconductor chip is not square but rectangular (oblong).

Abstract: A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.

Abstract: A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.

Abstract: There is provided a technique for reducing the occurrence of higher harmonics which occur from a field effect transistor, particularly a field effect transistor configuring a switching element of an antenna switch. In a transistor having a meander structure, the gate width of a partial transistor closest to a gate input side is increased. More specifically, a comb-like electrode is made longer than the other comb-like electrodes. In other words, a finger length is made greater than any other finger length. In particular, the comb-like electrode has the greatest length in all the comb-like electrodes.

Abstract: There is provided a technique for reducing the occurrence of higher harmonics which occur from a field effect transistor, particularly a field effect transistor configuring a switching element of an antenna switch. In a transistor having a meander structure, the gate width of a partial transistor closest to a gate input side is increased. More specifically, a comb-like electrode is made longer than the other comb-like electrodes. In other words, a finger length is made greater than any other finger length. In particular, the comb-like electrode has the greatest length in all the comb-like electrodes.

Abstract: A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.

Abstract: A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f and the first number is larger than the second number.

Abstract: A technology is provided so that RF modules used for cellular phones etc. can be reduced in size. Over a wiring board constituting an RF module, there are provided a first semiconductor chip in which an amplifier circuit is formed and a second semiconductor chip in which a control circuit for controlling the amplifier circuit is formed. A bonding pad over the second semiconductor chip is connected with a bonding pad over the first semiconductor chip directly by a wire without using a relay pad. In this regard, the bonding pad formed over the first semiconductor chip is not square but rectangular (oblong).

Abstract: A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f and the first number is larger than the second number.

Abstract: Disclosed herein is a high frequency power amplifier system having a transistor comprised of a first electrode, a second electrode and a control electrode and for controlling current which flows between the first electrode and the second electrode by applying a potential to the control electrode, and a resistance type potential divider circuit for determining a dc bias potential applied to the control electrode of the transistor, and wherein an input signal is inputted to the control electrode, an output signal is outputted from the first electrode and a control signal is inputted to the resistance type potential divider circuit. One resistor of the resistance type potential divider circuit is comprised of a temperature compensating resistor whose resistance value varies linearly, so that a temperature characteristic of an idle current defined as an output when the control signal is not inputted, assumes a negative temperature characteristic.

Abstract: Disclosed herein is a high frequency power amplifier system having a transistor comprised of a first electrode, a second electrode and a control electrode and for controlling current which flows between the first electrode and the second electrode by applying a potential to the control electrode, and a resistance type potential divider circuit for determining a dc bias potential applied to the control electrode of the transistor, and wherein an input signal is inputted to the control electrode, an output signal is outputted from the first electrode and a control signal is inputted to the resistance type potential divider circuit. One resistor of the resistance type potential divider circuit is comprised of a temperature compensating resistor whose resistance value varies linearly, so that a temperature characteristic of an idle current defined as an output when the control signal is not inputted, assumes a negative temperature characteristic.