Abstract: The object of the present invention is to provide a method of producing low valence titanium oxides in a steady supply manner acceptable in industrial production. The low valence titanium oxides are produced by electrical discharge between two electrodes in an aqueous medium, wherein at least one of the electrodes is a titanium-containing electrode.

Abstract: A method of producing a Group II-VI compound semiconductor. The method involves generating a pulsed electrical discharge plasma between metallic electrodes in sulfur to produce a Group II-VI compound semiconductor. A method of producing a Group II-VI compound semiconductor phosphor using a pulsed electrical discharge plasma. A hexagonal crystal of Group II-VI compound semiconductor composed of a plurality of twin crystals.

Abstract: A method for separating and enriching isotopes in an efficient and low-cost manner from a condensation-system (liquid or/and solid) material including two or more different isotopes by taking advantage of the sedimentation of atoms through an acceleration field by ultra-high speed rotation. The condensation-system material is placed in a sedimentation tank which is then housed in a supercentrifuge. The supercentrifuge in its rotor is rotation driven by an ultra-high speed rotation power source, and an acceleration field of energy of 100000 G to 1500000 G, i.e., about 100 to 800 m/s in terms of peripheral velocity, is applied to the above condensed (liquid or/and solid) material under such a temperature that is specified by an isotope material to be enriched. In this case, a difference in centrifugal force applied is provided between the isotopes in the condensed (liquid or/and solid) material comprising the at least two isotopes.

Abstract: The object of the present invention is to provide a method of producing low valence titanium oxides in a steady supply manner acceptable in industrial production. The low valence titanium oxides are produced by electrical discharge between two electrodes in an aqueous medium, wherein at least one of the electrodes is a titanium-containing electrode.

Abstract: An object is to provide a novel anatase titanium oxide having especially high photocatalytic activity as a photocatalyst useful as a material for environmental clean-up, such as removal of toxic substances, deodorization and decomposition of malodorous substances, prevention of fouling and sterilization, and a method of producing such an anatase titanium oxide. There is provided a titanium oxide having a reflectance of 80% or lower with respect to light having a wavelength of 400 nm to 700 nm. There is also provided a method of producing an anatase titanium oxide, comprising creating pulsed plasma by an electric current of lower than 5 amperes between titanium electrodes in water to oxidize a titanium. Preferably, the titanium oxide has a percentage weight loss of 1.0% or lower when heated at a temperature within the range of 400° C. to 800° C., and has the anatase structure or the anatase and rutile structures.

Abstract: An object of the invention is to provide a method for the stable production of a high-purity Group II-VI compound semiconductor on an industrial scale, and also a hexagonal crystal of Group II-VI compound semiconductor in which a metal can be doped easily. Another object of the invention is to provide a method of producing a Group II-VI compound semiconductor phosphor. The objects are achieved by a method of producing a Group II-VI compound semiconductor comprising generating a pulsed electrical discharge plasma between metallic electrodes in sulfur to produce a Group II-VI compound semiconductor; a method of producing a Group II-VI compound semiconductor phosphor using a pulsed electrical discharge plasma; and a hexagonal crystal of Group II-VI compound semiconductor composed of a plurality of twin crystals.

Abstract: This invention provides a method for separating and enriching isotopes in an efficient and low-cost manner from a condensation-system (liquid or/and solid) material comprising two or more different isotopes by taking advantage of the sedimentation of atoms through an acceleration field by ultra-high speed rotation. A condensation-system (liquid or/and solid) material (5) comprising the two or more isotopes is placed in a sedimentation tank (for example, 2) which is then housed in a supercentrifuge. The supercentrifuge in its rotor is rotation driven by an ultra-high speed rotation power source, and an acceleration field of energy of 100000 G to 1500000 G, i.e., about 100 to 800 m/s in terms of peripheral velocity, is applied to the above condensed (liquid or/and solid) material under such a temperature that is specified by an isotope material to be enriched.

Abstract: An object of the present invention is to achieve more high-speed rotation of a rotor to which a test object is stored, extending the duration of high-speed rotation, and temperature control of a rotor at the time of high-speed rotation. A high-speed rotation testing apparatus of the present invention comprises: a rotor having a hollow for a test object, to which a predetermined test object is stored; a spindle connected to the rotor; a torque applying device for applying a predetermined torque to the spindle, and a casing for sealing the rotor. The casing comprises a decompressing device and a holder for holding the spindle. The holder has a bushing for supporting the spindle and a bushing supporting member for supporting the bushing by inserting thereto. By forming the inner diameter of at least one of the bushing supporting member larger than the outer diameter of the bushing, the bushing supporting member supports the bushing to be rotatable.

Abstract: An object of the present invention is to achieve more high-speed rotation of a rotor to which a test object is stored, extending the duration of high-speed rotation, and temperature control of a rotor at the time of high-speed rotation. A high-speed rotation testing apparatus of the present invention comprises: a rotor having a hollow for a test object, to which a predetermined test object is stored; a spindle connected to the rotor; a torque applying device for applying a predetermined torque to the spindle, and a casing for sealing the rotor. The casing comprises a decompressing device and a holder for holding the spindle. The holder has a bushing for supporting the spindle and a bushing supporting member for supporting the bushing by inserting thereto. By forming the inner diameter of at least one of the bushing supporting member larger than the outer diameter of the bushing, the bushing supporting member supports the bushing to be rotatable.

Abstract: A densified high performance rare earth-iron-nitrogen permanent magnet obtained from a powder of a Th.sub.2 Zn.sub.17 compound containing nitrogen at interlattice sites, without using autogeneous sintering and yet preventing decomposition and/or denitrification from occurring. The process for producing the same need not necessarily use a binder, and it comprises compaction molding, or charging while applying a magnetic field, a powder of a nitrogen intrusion T--R--N compound having a specified composition and a Th.sub.2 Zn.sub.17 crystal structure, and applying thereto shock compression at a drive pressure of from 10 to 25 GPa as reduced to an equivalent drive pressure in an iron capsule.

Abstract: The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof.A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.

Abstract: The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof.A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X-ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.