Abstract: A shaping method includes irradiating a powder containing silicon carbide and metal boride with an energy beam based on shape data of an object of shaping to perform shaping, in which the metal boride has a melting point lower than the sublimation point of the silicon carbide.

Abstract: A semiconductor manufacturing apparatus includes a first top ring that is rotatable and configured to hold a wafer, a first turntable that is rotatable and has a polishing pad for performing polishing of a film formed on the wafer, a sound measuring unit (sensor) that measures a first sound generated during the polishing, and a first calculation unit (controller) that calculates a polishing amount of the film based on a first sound pressure of the first sound, a polishing amount per unit time of the polishing, and a time of the polishing.

Abstract: A semiconductor manufacturing apparatus includes a sound measuring unit that measures a first polishing sound of a film formed on a wafer, a sound pressure prediction regression model generation unit that generates a first regression model for obtaining a first sound pressure prediction value of the first polishing sound, a sound pressure prediction value calculation unit that performs a first calculation of the first sound pressure prediction value by using the first regression model, a residual difference calculation unit that performs a second calculation of a first residual difference, the first residual difference being a difference between a first sound pressure actual measurement value of the first polishing sound and the first sound pressure prediction value, and an end point determination unit that determines a polishing end point of the film by using the first residual difference.

Abstract: Provided is an article that includes silicon carbide as a main component and that has sufficient mechanical strength while manufactured by a three-dimensional shaping technology. The article that includes silicon carbide as a main component includes: silicon carbide; a metal boride having a melting point lower than a sublimation point of silicon carbide; and metal silicon.

Abstract: A method of accurately detecting an end point of substrate polishing using an acoustic sensor is disclosed. The method includes: detecting an acoustic event occurring with polishing of a substrate and outputting the acoustic event as acoustic signals; generating power spectra from the acoustic signals, each of the power spectra indicating a spectrum of a sound-pressure level; generating a power spectrum map indicating a temporal change in power spectrum by arranging the power spectra in a time-series order; and detecting a polishing end point of the substrate based on a change in the sound-pressure level in the power spectrum map.

Abstract: A substrate processing apparatus of accurately detecting an end point of substrate polishing using an acoustic sensor is disclosed. The substrate processing apparatus for polishing a substrate by pressing the substrate against a polishing pad, includes: an acoustic sensor configured to detect an acoustic event occurring with polishing of a substrate and output the acoustic event as acoustic signals; a power-spectrum generator configured to generate power spectra from the acoustic signals, each of the power spectra indicating a spectrum of a sound-pressure level; a map updating device configured to generate a power spectrum map indicating a temporal change in power spectrum by arranging the power spectra in a time-series order; and an end-point determiner configured to detect a polishing end point of the substrate based on a change in the sound-pressure level in the power spectrum map.

Abstract: A polishing apparatus includes a polisher that polishes a target object to be polished. A holder is rotatable while holding the target object to be polished. Multiple concentric elastic members around the center of a rotation shaft of the holder are provided on the holder and elastically press the target object to be polished against the polisher. Multiple sensors are provided in the elastic members and detect vibration from a polishing surface of the target object to be polished. The detected vibration allows the polishing apparatus to create an unevenness map of the polishing surface and correspondingly actuate the concentric elastic members to remove the unevenness, according to a control sequence set in advance, based on the detected vibration, in a polishing control program to control the concentric elastic members.

Abstract: An additive manufacturing apparatus includes a powder-layer forming portion, an energy beam source, a shielding portion, and/or a removal portion. The powder-layer forming portion is configured to form a powder layer by moving between a waiting position and a forming area and supplying powder to the forming area. The energy beam source is configured to irradiate the powder layer with an energy beam. The shielding portion is disposed outside the forming area and between the forming area and the waiting position and configured to reduce powder reaching the powder-layer forming portion, the powder being scattered from the powder layer when the powder layer is irradiated with the energy beam by the energy beam source. The removal portion is configured to remove the powder scattered from the powder layer and having adhered to the powder-layer forming portion.

Abstract: A semiconductor manufacturing apparatus includes a sound measuring unit that measures a first polishing sound of a film formed on a wafer, a sound pressure prediction regression model generation unit that generates a first regression model for obtaining a first sound pressure prediction value of the first polishing sound, a sound pressure prediction value calculation unit that performs a first calculation of the first sound pressure prediction value by using the first regression model, a residual difference calculation unit that performs a second calculation of a first residual difference, the first residual difference being a difference between a first sound pressure actual measurement value of the first polishing sound and the first sound pressure prediction value, and an end point determination unit that determines a polishing end point of the film by using the first residual difference.

Abstract: A semiconductor manufacturing apparatus includes a first top ring that is rotatable and configured to hold a wafer, a first turntable that is rotatable and has a polishing pad for performing polishing of a film formed on the wafer, a sound measuring unit (sensor) that measures a first sound generated during the polishing, and a first calculation unit (controller) that calculates a polishing amount of the film based on a first sound pressure of the first sound, a polishing amount per unit time of the polishing, and a time of the polishing.

Abstract: A polishing apparatus includes an acoustic sensor, a sound collector, an analyzer, a feature quantity calculator, and an end point calculator. The acoustic sensor detects the polishing sound of an object. The sound collector collects a polishing sound detected by the acoustic sensor. The analyzer performs frequency analysis on the power spectrum of the polishing sound with a predetermined time resolution. The feature quantity calculator calculates an arithmetic value of the power spectra having a preset time difference of the power spectra as a polishing feature quantity by using the analysis data provided by the analysis performed by the analyzer. The end point calculator determines a polishing end point of the object based on the change in the feature quantity.

Abstract: A manufacturing method of a three-dimensional shaped object includes a first step of depositing powder to form a powder layer, and a second step of scanning and irradiating an energy beam to the powder layer to melt and then solidifying the powder layer to form a solidified layer. The energy beam is irradiated to the powder layer corresponding to a contour area and an inner-solid area inside of the contour area. The first and second steps are alternately and repeatedly executed. The energy beam is scanned such that an irradiation starting point of the energy beam for forming an upper solidified layer does not overlap with an irradiation starting point of the energy beam for forming a lower solidified layer in a view from a lamination direction.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes detecting elastic waves, and detecting or predicting an abnormality of the processing object occurring during polishing of the processing object. The elastic waves are generated from the processing object during the polishing. The abnormality is detected or predicted by analyzing the detected elastic waves.

Abstract: Provided is an article that includes silicon carbide as a main component and that has sufficient mechanical strength while manufactured by a three-dimensional shaping technology. The article that includes silicon carbide as a main component includes: silicon carbide; a metal boride having a melting point lower than a sublimation point of silicon carbide; and metal silicon.

Abstract: A polishing apparatus includes a polisher that polishes a target object to be polished. A holder is rotatable while holding the target object to be polished. Multiple concentric elastic members around the center of a rotation shaft of the holder are provided on the holder and elastically press the target object to be polished against the polisher. Multiple sensors are provided in the elastic members and detect vibration from a polishing surface of the target object to be polished. The detected vibration allows the polishing apparatus to create an unevenness map of the polishing surface and correspondingly actuate the concentric elastic members to remove the unevenness, according to a control sequence set in advance, based on the detected vibration, in a polishing control program to control the concentric elastic members.

Abstract: A control device of a semiconductor manufacturing apparatus includes a processor and a memory connected to the processor and storing instructions executable by the processor. The instructions collect a sound of processing a substrate by the semiconductor manufacturing apparatus. The instructions calculate a difference of a power spectrum of the processing sound between a first point of time and a second point of time. The instructions determine a change point of processing of the substrate based on the difference.

Abstract: A shaping method includes irradiating a powder containing silicon carbide and metal boride with an energy beam based on shape data of an object of shaping to perform shaping, in which the metal boride has a melting point lower than the sublimation point of the silicon carbide.

Abstract: A polishing apparatus includes an acoustic sensor, a sound collector, an analyzer, a feature quantity calculator, and an end point calculator. The acoustic sensor detects the polishing sound of an object. The sound collector collects a polishing sound detected by the acoustic sensor. The analyzer performs frequency analysis on the power spectrum of the polishing sound with a predetermined time resolution. The feature quantity calculator calculates an arithmetic value of the power spectra having a preset time difference of the power spectra as a polishing feature quantity by using the analysis data provided by the analysis performed by the analyzer. The end point calculator determines a polishing end point of the object based on the change in the feature quantity.

Abstract: A manufacturing method of a three-dimensional shaped object includes a first step of depositing powder to form a powder layer, and a second step of scanning and irradiating an energy beam to the powder layer to melt and then solidifying the powder layer to form a solidified layer. The energy beam is irradiated to the powder layer corresponding to a contour area and an inner-solid area inside of the contour area. The first and second steps are alternately and repeatedly executed. The energy beam is scanned such that an irradiation starting point of the energy beam for forming an upper solidified layer does not overlap with an irradiation starting point of the energy beam for forming a lower solidified layer in a view from a lamination direction.

Abstract: According to one embodiment, there is provided an anomaly detection system for a second unit incidental to a first unit that processes a substrate. The anomaly detection system includes a collecting unit, a first calculating unit, a second calculating unit, and a determining unit. The collecting unit is configured to collect a plurality of types of parameters related to a state of the second unit. The first calculating unit is configured to calculate a divergence of a coordinate point from a reference space in a virtual coordinate space of a plurality of types of parameters, the coordinate point being indicated by the plurality of types of collected parameters. The second calculating unit is configured to accumulate the calculated divergence and calculate a cumulative divergence. The determining unit is configured to compare the calculated cumulative divergence with a threshold value and determine an anomaly in the second unit.