Patents by Inventor Tsutomu Nanataki

Tsutomu Nanataki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9515347
    Abstract: An object of the present invention is to provide a lithium secondary battery cathode which can more improve characteristics of the battery. The cathode of the present invention includes an electroconductive cathode current collector, a plurality of plate-like particle formed of a cathode active material, and a binder containing microparticles formed of the cathode active material and being smaller than the plate-like particles. The plate-like particles are formed so as to have an aspect ratio of 4 to 50. The plate-like particles are arranged such that the particles cover the surface of the cathode current collector surface at a percent area of 85 to 98%. The binder is disposed so as to intervene between two adjacent plate-like particles.
    Type: Grant
    Filed: November 1, 2011
    Date of Patent: December 6, 2016
    Assignee: NGK Insulators, Ltd.
    Inventors: Shigeki Okada, Tsutomu Nanataki, Nobuyuki Kobayashi, Jun Yoshikawa, Akira Urakawa
  • Publication number: 20160293800
    Abstract: Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.
    Type: Application
    Filed: June 15, 2016
    Publication date: October 6, 2016
    Applicant: NGK INSULATORS, LTD.
    Inventors: Morimichi WATANABE, Jun YOSHIKAWA, Tsutomu NANATAKI, Katsuhiro IMAI, Tomohiko SUGIYAMA, Takashi YOSHINO, Yukihisa TAKEUCHI, Kei SATO
  • Patent number: 9425454
    Abstract: To provide a lithium secondary battery which has high capacity while maintaining excellent cycle characteristic. The lithium secondary battery cathode of the present invention includes a cathode collector formed of a conductive substance, and a cathode active material layer formed of a sintered lithium composite oxide sheet. The cathode active material layer is bonded to the cathode collector by the mediation of a conductive bonding layer. A characteristic feature of the present invention resides in that the cathode active material layer has a thickness of 30 ?m or more, a mean pore size of 0.1 to 5 ?m, and a voidage of 3% or more and less than 15%.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: August 23, 2016
    Assignee: NGK Insulators, Ltd.
    Inventors: Ryuta Sugiura, Nobuyuki Kobayashi, Tsutomu Nanataki, Masaya Ugaji, Kaoru Nagata
  • Publication number: 20160197234
    Abstract: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.
    Type: Application
    Filed: March 17, 2016
    Publication date: July 7, 2016
    Inventors: Morimichi WATANABE, Jun YOSHIKAWA, Yoshitaka KURAOKA, Tsutomu NANATAKI
  • Patent number: 9379375
    Abstract: To provide a lithium secondary battery which has high capacity while maintaining excellent cycle characteristic. The lithium secondary battery cathode of the present invention includes a cathode collector formed of a conductive substance, and a cathode active material layer formed of a sintered lithium composite oxide sheet. The cathode active material layer is bonded to the cathode collector by the mediation of a conductive bonding layer. A characteristic feature of the present invention resides in that the cathode active material layer has a thickness of 30 ?m or more, a voidage of 3 to 30%, and an open pore ratio of 70% or higher.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: June 28, 2016
    Assignee: NGK Insulators, Ltd.
    Inventors: Ryuta Sugiura, Nobuyuki Kobayashi, Tsutomu Nanataki, Masaya Ugaji, Kaoru Nagata
  • Publication number: 20160172541
    Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.
    Type: Application
    Filed: February 5, 2016
    Publication date: June 16, 2016
    Inventors: Morimichi WATANABE, Jun YOSHIKAWA, Tsutomu NANATAKI, Katsuhiro IMAI, Tomohiko SUGIYAMA, Takashi YOSHINO, Yukihisa TAKEUCHI, Kei SATO
  • Publication number: 20160145768
    Abstract: Disclosed is a self-supporting zinc oxide substrate composed of a plate composed of a plurality of zinc-oxide-based single crystal grains, wherein the plate has a single crystal structure in an approximately normal direction, and the zinc-oxide-based single crystal grains have a cross-sectional average diameter of greater than 1 ?m. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a layer with a thickness of 20 ?m or greater composed of zinc-oxide-based crystals on the oriented polycrystalline sintered body so that the layer has crystal orientation mostly in conformity with crystal orientation of the oriented polycrystalline sintered body; and removing the oriented polycrystalline sintered body to obtain the self-supporting zinc oxide substrate.
    Type: Application
    Filed: November 25, 2015
    Publication date: May 26, 2016
    Inventors: Morimichi WATANABE, Jun YOSHIKAWA, Hirofumi YAMAGUCHI, Tsutomu NANATAKI
  • Patent number: 9312446
    Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: April 12, 2016
    Assignee: NGK Insulators, Ltd.
    Inventors: Morimichi Watanabe, Jun Yoshikawa, Tsutomu Nanataki, Katsuhiro Imai, Tomohiko Sugiyama, Takashi Yoshino, Yukihisa Takeuchi, Kei Sato
  • Patent number: 9257702
    Abstract: To provide a lithium secondary battery which has high capacity while maintaining excellent charge-discharge characteristic, and to provide a cathode of the lithium secondary battery and a plate-like particle for cathode active material to be contained in the cathode. The plate-like particle of cathode active material for a lithium secondary battery of the present invention has a layered rock salt structure, a thickness of 5 ?m or more and less than 30 ?m, 2 or less of [003]/[104] which is a ratio of intensity of X-ray diffraction by the (003) plane to intensity of X-ray diffraction by the (104) plane, a voidage of 3% or more and less than 30%, and an open pore ratio of 70% or higher.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: February 9, 2016
    Assignee: NGK Insulators, Ltd.
    Inventors: Ryuta Sugiura, Nobuyuki Kobayashi, Tsutomu Nanataki
  • Patent number: 9247633
    Abstract: A drive circuit is laminated via a high exothermic element disposed on a power circuit, and it is configured so that the average thermal expansion coefficient of the side of the power circuit of the drive circuit board may be larger than the average thermal expansion coefficient of the side opposite to the power circuit. Thereby, the drive circuit board will be curved in the same direction as the power circuit board when the power circuit board is curved due to heat generation from the high exothermic element accompanying the operation of the module. Thereby, in a high-capacity module, while attaining reduction in size and weight, reduction in surge, and reduction in a loss, poor junction between the high exothermic element of the power circuit and the drive circuit board can be suppressed and heat generating from the high exothermic element can be more effectively released.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: January 26, 2016
    Assignee: NGK Insulators, Ltd.
    Inventors: Takami Hirai, Shinsuke Yano, Tsutomu Nanataki, Hirofumi Yamaguchi
  • Patent number: 9236601
    Abstract: To provide a lithium secondary battery which has high capacity while maintaining excellent charge-discharge characteristic, and to provide a cathode of the lithium secondary battery and a plate-like particle for cathode active material to be contained in the cathode. The plate-like particle of cathode active material for a lithium secondary battery of the present invention has a layered rock salt structure, a thickness of 5 ?m or more and less than 30 ?m, 2 or less of [003]/[104] which is a ratio of intensity of X-ray diffraction by the (003) plane to intensity of X-ray diffraction by the (104) plane, a mean pore size of 0.1 to 5 ?m, and a voidage of 3% or more and less than 15%.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: January 12, 2016
    Assignee: NGK Insulators, Ltd.
    Inventors: Ryuta Sugiura, Nobuyuki Kobayashi, Tsutomu Nanataki
  • Publication number: 20150380222
    Abstract: Provided is a zinc oxide-based sputtering target that enables production of a zinc oxide-based sputtered film having higher transparency and electrical conductivity. The zinc oxide-based sputtering target of the present invention is composed of a zinc oxide-based sintered body including zinc oxide crystal grains as a main phase and spinel phases as a dopant-containing grain boundary phase, and the zinc oxide-based sputtering target has a degree of (002) orientation of ZnO of 80% or greater at a sputtering surface, a density of the zinc oxide-based sintered body of 5.50 g/cm3 or greater, the number of the spinel phases per area of 20 counts/100 ?m2 or greater, and a spinel phase distribution index of 0.40 or less.
    Type: Application
    Filed: September 9, 2015
    Publication date: December 31, 2015
    Inventors: Jun YOSHIKAWA, Hirofumi YAMAGUCHI, Tsutomu NANATAKI
  • Publication number: 20150372191
    Abstract: Provided is a surface light-emitting device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a light emitting functional layer provided on the substrate, and an electrode provided on the light emitting functional layer. According to the present invention, a surface light-emitting device having high luminous efficiency can be inexpensively provided.
    Type: Application
    Filed: June 12, 2015
    Publication date: December 24, 2015
    Inventors: Morimichi WATANABE, Katsuhiro IMAI, Jun YOSHIKAWA, Tsutomu NANATAKI, Takashi YOSHINO, Yukihisa TAKEUCHI
  • Patent number: 9212085
    Abstract: An easily-administered technology which demonstrates the intrinsic thermal conductivity improvement effect by addition of non-oxide system compound crystal phase (filler particles) and makes it possible to sufficiently raise the thermal conductivity of a glass-ceramics composite material is provided. In the glass phase which constitutes a glass-ceramics composite material, the quantity of aluminum oxide (Al2O3) component is increased under a condition where at least either of zinc oxide (ZnO) component or magnesium oxide (MgO) component exists in a predetermined quantity or more. Thereby, the unintended reaction between a non-oxide system compound crystal phase and a glass phase can be suppressed, and the intrinsic thermal conductivity improvement effect by addition of non-oxide system compound crystal phase (filler particles) can be demonstrated.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: December 15, 2015
    Assignee: NGK Insulators, Ltd.
    Inventors: Shinsuke Yano, Yoshihiro Tanaka, Tsutomu Nanataki, Hirofumi Yamaguchi, Natsumi Shimogawa, Naoto Ohira
  • Patent number: 9115005
    Abstract: A cathode active material precursor particle, a method for producing thereof and a method for producing cathode active material for a lithium secondary battery. The cathode active material precursor particle is capable of forming a cathode active material for a lithium secondary battery including a lithium composite oxide having a layered rock salt structure through lithium incorporation. The particles are characterized by the cathode active material precursor particle being formed into a substantially spherical shape and includes therein a large number of voids in a substantially uniform manner; and the cathode active material precursor particle has: an average particle diameter D50 of 0.5 to 5 ?m; a specific surface area of 3 to 25 m2/g; and a relative tap density, which is a value obtained by dividing a tap density by a theoretical density of a material constituting the cathode active material precursor particle, of 0.25 to 0.4.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: August 25, 2015
    Assignee: NGK Insulators, Ltd.
    Inventors: Shigeki Okada, Ryuta Sugiura, Akira Urakawa, Kazuki Maeda, Tsutomu Nanataki
  • Patent number: 9064758
    Abstract: Problems, such as increase in the electrical resistance in the junction(s) of the terminal(s) of a power semiconductor element and the electrode(s) of a peripheral circuit and decrease in the dielectric strength voltage between adjacent junctions, resulting from the insufficient alignment of the power semiconductor element terminal(s) and the the peripheral circuit electrode(s), in the high-capacity module which is intended to attain reduction in size and weight, reduction in surge, and reduction in loss by lamination of the peripheral circuit onto the power circuit, should be reduced. By preparing level difference(s) in the surface of the peripheral circuit board to more accurately align the peripheral circuit board electrode(s) and the power semiconductor element terminal(s) by contact of the level difference(s) and the lateral face(s) of the power semiconductor element at the time of lamination of the power circuit and the peripheral circuit, the above-mentioned problems can be reduced.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: June 23, 2015
    Assignee: NGK Insulators, Ltd.
    Inventors: Shinsuke Yano, Takami Hirai, Tsutomu Nanataki, Hirofumi Yamaguchi
  • Publication number: 20150144956
    Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.
    Type: Application
    Filed: September 29, 2014
    Publication date: May 28, 2015
    Inventors: Morimichi WATANABE, Jun YOSHIKAWA, Tsutomu NANATAKI, Katsuhiro IMAI, Tomohiko SUGIYAMA, Takashi YOSHINO, Yukihisa TAKEUCHI, Kei SATO
  • Patent number: 9023519
    Abstract: The present invention relates to a cathode and a cathode active material plate for a lithium secondary battery, and the production method thereof. There is a feature of the present invention in that grooves consisting of a concave portion and having an infinite form (for example, an infinite cell-like shape) in a planar view are formed in a principal surface of the cathode active material plate.
    Type: Grant
    Filed: February 21, 2013
    Date of Patent: May 5, 2015
    Assignee: NGK Insulators, Ltd.
    Inventors: Shuichi Ozawa, Akira Urakawa, Shigeki Okada, Ryuta Sugiura, Tsutomu Nanataki
  • Patent number: 9012786
    Abstract: A circuit board including a substrate having first and second dielectric layers of first and second dielectrics, the second dielectric containing 8 mass % or more of a glass net former component. At least one portion of an inner layer electrode has approximately two principal surfaces parallel to principal surfaces of the circuit board and a thickness of not less than 50 micrometers in a normal direction of the principal surfaces. The inner layer electrode and second dielectric layer contact with each other, and a ratio t/T of sum total thickness t of the second dielectric layer in contact with the inner layer electrode in a normal direction of the principal surface to sum total thickness T of the first dielectric layer in a normal direction of the principal surface is 0.1 or more.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: April 21, 2015
    Assignee: NGK Insulators, Ltd.
    Inventors: Shinsuke Yano, Takami Hirai, Tsutomu Nanataki, Hirofumi Yamaguchi
  • Patent number: 8956780
    Abstract: A solid oxide fuel cell has a stack structure in which sheet bodies and separators for separating air and fuel gas are stacked in alternating layers. Each of the sheet bodies includes an electrolyte layer, a fuel electrode layer formed on the upper surface of the electrolyte layer, and an air electrode layer formed on the lower surface of the electrolyte layer, wherein these layers are stacked and fired in such a manner that the electrolyte layer is sandwiched between the fuel electrode layer and the air electrode layer. The thickness of the electrolyte layer is 0.3 ?m or more and 5 ?m or less, and the electrolyte layer is composed of a single particle of YSZ in the thickness direction. Thus, the electrolyte layer is extremely thin, and further, the grain boundary in the thickness direction is small. Accordingly, the IR loss (electric resistance) of the electrolyte layer can remarkably be reduced.
    Type: Grant
    Filed: January 8, 2009
    Date of Patent: February 17, 2015
    Assignee: NGK Insulators, Ltd.
    Inventors: Makoto Ohmori, Natsumi Shimogawa, Toshiyuki Nakamura, Tsutomu Nanataki