Patents by Inventor Tsutomu Okamoto

Tsutomu Okamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5322588
    Abstract: A method is provided for producing a KTiOPO.sub.4 which is grown at a temperature higher than its Curie temperature using a TSSG method. The grown KTiOPO.sub.4 single crystal is maintained in contact with a melt while the crystal is maintained at a temperature higher than the Curie temperature. A d.c. current is applied in this state across a seed crystal and the melt, while the single crystal is cooled to a temperature lower than the Curie temperature. The value of current density D, defined by the formula D=Ip/(a+b), where Ip is the impressed current and a, b are crystal sizes along a and b axes, respectively, is selected to be 0.01 mA/cm.sup.2 .ltoreq.D.ltoreq.1.0 mA/cm.sup.2. In this manner, the produced KTiOPO.sub.4 is processed into a single domain crystal.
    Type: Grant
    Filed: July 29, 1992
    Date of Patent: June 21, 1994
    Assignee: Sony Corporation
    Inventors: Kazutaka Habu, Tsutomu Okamoto, Koichi Aso, Koichi Tatsuki
  • Patent number: 5135746
    Abstract: A method for prophylaxis or treatment of protozoal disease which comprises administering to domestic animal a plant component having antiprotozoal activity in combination with an ionophore antibiotic is disclosed. The method is safe and economical, and gives the excellent effect to protozoal disease, so that it is useful for the poultry and the live-stock industry.
    Type: Grant
    Filed: April 24, 1990
    Date of Patent: August 4, 1992
    Assignee: Takeda Chemical Industries, Ltd.
    Inventors: Toshimi Matsuno, Fumio Hariguchi, Tsutomu Okamoto
  • Patent number: 4983936
    Abstract: A ferromagnetic resonance device is disclosed which utilize the perpendicular resonance of ferrimagnetic YIG thin film operable under a D.C. bias magnetic field perpendicular to a major surface of the YIG thin film element. By making the YIG thin film to have a major surface thereof (100) crystal plane of YIG or (111) crystal plane of a substituted YIG having reduced Ku value, lower limit of resonance frequency is extremely lowered. Thus wide range variable filter device can be obtained.
    Type: Grant
    Filed: February 21, 1989
    Date of Patent: January 8, 1991
    Assignee: Sony Corporation
    Inventors: Yoshikazu Murakami, Takahiro Ogihara, Tsutomu Okamoto, Kanako Niikura
  • Patent number: 4898440
    Abstract: An optical waveguide device is disclosed which utilizes an interaction between a guided optical wave and a magnetostatic wave. The optical waveguide device comprises a layer of bismuth substituted magnetic garnet which guides an optical wave. A pair of electrodes coupled to the layer of the magnetic garnet generates a magnetostatic backward volume wave in the layer of the magnetic garnet under an application of a certain bias magnetic field. The guided optical wave and the magnetostatic wave interact with each other wherein adverse effect caused by a spin effect is avoided to realize high efficiency at high frequency.
    Type: Grant
    Filed: September 14, 1988
    Date of Patent: February 6, 1990
    Assignee: Sony Corporation
    Inventors: Hitoshi Tamada, Masahiko Kaneko, Tsutomu Okamoto
  • Patent number: 4887052
    Abstract: A tuned oscillator utilizing a thin film ferromagnetic resonator is disclosed. The oscillator comprises an active element for oscillator and a YIG thin film resonator connected to the active element as a part of feed-back circuit for the active element. The YIG thin film resonator is applied with a bias magnetic field perpendicular to a surfce of a YIG disk which is generated by a permanent magnet for a fixed component and a coil for a variable component for the resonance frequency. The resonance frequency is stabilized by use of a PLL circuit connected to an output of the oscillator and feeding back to the coil. Since the YIG thin film tuned oscillator has a high Q value, high quality communication signal processing can be achieved. The YIG tuned oscillator is used as local oscillator for a transciever.
    Type: Grant
    Filed: November 25, 1988
    Date of Patent: December 12, 1989
    Assignee: Sony Corporation
    Inventors: Yoshikazu Murakami, Yasuyuki Mizunuma, Takahiro Ohgihara, Hiroyuki Nakano, Kanako Niikura, Tsutomu Okamoto
  • Patent number: 4642795
    Abstract: A region (21) having different magnetic energy from that of other portion is formed in a layer (1b) of soft magnetic material which has an easy axis of magnetization normal to the layer surface and is magnetized in one direction by applying an external bias magnetic field. By irradiating a light beam on the layer surface, a cylindrical magnetic domain b magnetized in the direction opposite to the magnetization direction is formed at a first stable position of the region (21). This cylindrical magnetic domain is moved to a second stable position by a second cylindrical magnetic domain c.multidot.b formed by the irradiation of light beam or by a temperature gradient whereby stable recording, reading thereof and accurate calculation function can be carried out.
    Type: Grant
    Filed: August 20, 1984
    Date of Patent: February 10, 1987
    Assignee: Sony Corporation
    Inventors: Hitoshi Tamada, Masahiko Kaneko, Tsutomu Okamoto, Toshiro Yamada
  • Patent number: 4235663
    Abstract: A thin (less than 500.mu.m) epitaxial dielectric layer having low photoconductivity is grown on a monocrystalline wafer composed of Bi.sub.12 GeO.sub.20 by a liquid-phase epitaxial growth technique. The composition of the liquid melt from which the dielectric layer is grown is composed of a pseudo-three-component system defined by the formula:(Bi.sub.2 O.sub.3).multidot.(GeO.sub.2).multidot.(Y+xGa.sub.2 O.sub.3)wherein Y is a component selected from the group consisting of CaO, MgO, BaO, SrO and mixtures thereof and x is a numeral ranging from 0.05 to 5.0. The pseudo-three-component system is so-selected that in a ternary diagram of the three individual components, the mol ratio of Bi.sub.2 O.sub.3 :GeO.sub.2 (Y+xGa.sub.2 O.sub.3) is surrounded by a range connecting points A, B and C on such ternary diagram wherein point A is 0.760:0.002:0.238; point B is 0.994:0.002:0.004; and point C is 0.760:0.236:0.004.
    Type: Grant
    Filed: December 1, 1977
    Date of Patent: November 25, 1980
    Assignee: Sony Corporation
    Inventors: Tsutomu Okamoto, Hidemasa Tamura
  • Patent number: 4212688
    Abstract: An alloy for a magnetoresistive element has an ordered phase with superstructure and consists of nickel and cobalt atoms, and the ratio of the nickel atoms to the cobalt atoms by the number of atoms is substantially within the range of 40:60 to 60:40.A method of manufacturing an alloy for a magnetoresistive element includes the steps of preparing a substrate for a magnetoresistive element, and forming so a nickel-cobalt alloy film on the substrate at the temperature of more than 250.degree. C. that the alloy has an ordered phase with superstructure and the ratio of the nickel atoms to the cobalt atoms by the number of atoms is within the range of 40:60 to 60:40.
    Type: Grant
    Filed: November 1, 1978
    Date of Patent: July 15, 1980
    Assignee: Sony Corporation
    Inventors: Yoshimi Makino, Tsutomu Okamoto