Abstract: In substrate processing, by supplying a first processing liquid onto an upper surface 91 of a substrate 9 held in a horizontal state, a liquid film 81 of the first processing liquid which entirely covers the upper surface 91 is formed. Further, by heating the substrate 9, a vapor layer 82 of the first processing liquid is formed between the upper surface 91 and the liquid film 81 of the first processing liquid on the upper surface 91. Then, by supplying a second processing liquid onto the upper surface 91 of the substrate 9, the liquid film 81 of the first processing liquid is removed from the upper surface 91. It is thereby possible to appropriately remove extraneous matters 89 from the upper surface 91 of the substrate 9, which are taken in the liquid film 81 of the first processing liquid as the vapor layer 82 is formed.

Abstract: A substrate processing method includes an intermediate processing step of processing the pattern forming surface by the intermediate processing liquid after a chemical liquid processing step, a filler discharging step of discharging a filler after the intermediate processing step, a filler spreading step of spreading the filler, a solidified film forming step of solidifying the filler, a lower position disposing step of making a blocking member be disposed at a lower position prior to start of the chemical liquid processing step, and a blocking member elevating step of starting elevation of the blocking member toward an upper position in a state where the pattern forming surface is covered with the intermediate processing liquid. The chemical liquid is discharged from a central nozzle. Spreading of the filler is started in a state where the blocking member is positioned at the upper position.

Abstract: A substrate processing method includes an intermediate processing step of processing the pattern forming surface by the intermediate processing liquid after a chemical liquid processing step, a filler discharging step of discharging a filler after the intermediate processing step, a filler spreading step of spreading the filler, a solidified film forming step of solidifying the filler, a lower position disposing step of making a blocking member be disposed at a lower position prior to start of the chemical liquid processing step, and a blocking member elevating step of starting elevation of the blocking member toward an upper position in a state where the pattern forming surface is covered with the intermediate processing liquid. The chemical liquid is discharged from a central nozzle. Spreading of the filler is started in a state where the blocking member is positioned at the upper position.

Abstract: In substrate processing, by supplying a first processing liquid onto an upper surface 91 of a substrate 9 held in a horizontal state, a liquid film 81 of the first processing liquid which entirely covers the upper surface 91 is formed. Further, by heating the substrate 9, a vapor layer 82 of the first processing liquid is formed between the upper surface 91 and the liquid film 81 of the first processing liquid on the upper surface 91. Then, by supplying a second processing liquid onto the upper surface 91 of the substrate 9, the liquid film 81 of the first processing liquid is removed from the upper surface 91. It is thereby possible to appropriately remove extraneous matters 89 from the upper surface 91 of the substrate 9, which are taken in the liquid film 81 of the first processing liquid as the vapor layer 82 is formed.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

Abstract: A substrate treatment method is provided which includes: a treatment liquid supplying step of supplying a treatment liquid to a major surface of a substrate; a substrate rotating step of rotating the substrate while retaining a liquid film of the treatment liquid on the major surface of the substrate; a heater heating step of locating a heater in opposed relation to the major surface of the substrate to heat the treatment liquid film by the heater in the substrate rotating step; and a heat amount controlling step of controlling the amount of heat to be applied per unit time to a predetermined portion of the liquid film from the heater according to the rotation speed of the substrate in the heater heating step.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.