Abstract: A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.

Abstract: A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and that the application of an electric signal not lower than a second threshold signal, which has a polarity different from that of the first threshold signal, allows the storage element to shift form a low resistance value state to a high resistance value state, and a circuit element connected to the storage element in series to be a load; wherein the memory devices are arranged in a matrix and one terminal of each of the memory devices is connected to a common line; and wherein an intermediate potential between a power supply potential and a ground potential is applied to the common line.

Abstract: A storage device is proposed, which includes: a source line arranged along a row direction; a bit line arranged along a column direction; a storage element arranged at an intersection of the source line and the bit line; a writing circuit connected to one terminal of the bit line and applying a predetermined voltage to the bit line; and a voltage adjusting circuit connected to a storage element that is located closest to another terminal of the bit line; wherein the voltage adjusting circuit compares the voltage applied to the storage element located closest to the another terminal of the bit line with a setting voltage to thereby adjust the voltage that the writing circuit applies to the bit line.

Abstract: A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.

Abstract: A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and that the application of an electric signal not lower than a second threshold signal, which has a polarity different from that of the first threshold signal, allows the storage element to shift form a low resistance value state to a high resistance value state, and a circuit element connected to the storage element in series to be a load; wherein the memory devices are arranged in a matrix and one terminal of each of the memory devices is connected to a common line; and wherein an intermediate potential between a power supply potential and a ground potential is applied to the common line.

Abstract: A storage device is proposed, which includes: a source line arranged along a row direction; a bit line arranged along a column direction; a storage element arranged at an intersection of the source line and the bit line; a writing circuit connected to one terminal of the bit line and applying a predetermined voltage to the bit line; and a voltage adjusting circuit connected to a storage element that is located closest to another terminal of the bit line; wherein the voltage adjusting circuit compares the voltage applied to the storage element located closest to the another terminal of the bit line with a setting voltage to thereby adjust the voltage that the writing circuit applies to the bit line.