Abstract: The touch panel is provided with: a touch panel substrate; and a flexible printed circuit board, wherein the touch panel substrate has an electrode for detection and a rear surface electrode, the flexible printed circuit board has a terminal portion, the terminals in the terminal portion are electrically and mechanically connected to connection terminals formed along a side of the touch panel substrate, the terminal portion has a first terminal portion and a second terminal portion, a terminal in the second terminal portion is shorter than a terminal in the first terminal portion, the flexible printed circuit board has a rear surface electrode connection portion and has a terminal for shielding, and the rear surface electrode connection portion is folded on a rear surface side of the touch panel substrate so that the terminal for shielding is mechanically and electrically connected to the rear surface electrode.

Abstract: A transmission side apparatus selectively inserts video stream data and MPEG data into a video storage area to store video stream data in a frame structure of an SDI system and generates SDI data of which the identification ID indicating a type of data included therein by an SDI data insertion processing device and transmits the SDI data to a coaxial cable from a transmission interface device. A reception side apparatus receives the SDI data transmitted via the coaxial cable by a reception interface device, extracts data to be transmitted from a video storage area of received SDI data and determines whether the data to be transmitted is the video stream data or the MPEG data by an SDI data extraction processing device to output it. Therefore, a high-speed MPEG data transmission assuring frame/field accuracy becomes possible by using an existing technology and device.

Abstract: A two-photon absorption material represented by the following General Formula (I): where R1 to R8 each represent hydrogen, halogen, a carboxyl group, a carboxylic acid ester group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted alkyl group; one to three of X1 to X4 each represent a substituted or unsubstituted amino group, a substituted or unsubstituted aminophenyl group, a substituted or unsubstituted dialkylaminophenyl group, a substituted or unsubstituted N,N-diphenyl-aminophenyl group, a substituted or unsubstituted indolyl group, or a substituted or unsubstituted azulenyl group, and the other represents or the others each represent hydrogen, halogen, a carboxyl group, a carboxylic acid ester group, a substituted or unsubstituted aryl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted alkyl group or a perhalogenoalkyl group; and M represents two hydrogen atoms or a divalent, trivalent or tetravalent metal atom which may have oxygen or

Abstract: Provided are a compound represented by Formula (I): wherein R1, R2, R3, and R4 are each independently selected from a hydrogen atom, a C1-6 alkyl group which may be substituted, a C7-14 aralkyl group which may be substituted and —C(?O)Rx; n denotes an integer selected from 1 and 2; and ring Ar is selected from the groups represented by the following Formula (a) to (f). or a prodrug thereof or a pharmaceutically acceptable salt thereof as well as a pharmaceutical agent and a pharmaceutical composition containing such a compound or a prodrug thereof, or a pharmaceutically acceptable salt thereof.

Abstract: A photosensitized composite material and a material, an element, a device, and the like, which employ the photosensitized composite material, are provided. In the photosensitized composite material, multiphoton absorption compounds are highly sensitized for practical use by utilizing an enhanced plasmon field. The photosensitized composite material has a structure where the multiphoton absorption compounds are linked to the surface of a fine metal particle through linking groups. The fine metal particle generates an enhanced surface plasmon field in resonance with a multiphoton excitation wavelength. The multiphoton absorption compounds have a molecular structure enabling multiphoton absorption.

Abstract: A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

Abstract: A toner cartridge comprises a toner container which contains toner, a driving member which rotationally drives a conveying member, an agitating member which agitates a toner in the toner container while being rotated, a driven member which rotates in association with the driving member which is for rotationally driving the agitating member, and a rotational body which rotates according to rotation of the driven member, has a plurality of slits in rotational circumference for identifying a type of the toner cartridge, and has 1/K or more of the slits when a ratio of a rotational speed R1 (rad/s) of the driving member and a rotational speed R2 (rad/s) of the driven member is K=R2/R1.

Abstract: A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof.

Abstract: To provide a compact manual cleaning instrument with which it is simple to collect and discharge dust, with which it is possible to clean in tight spaces, which is silent, and which is comfortable to use. A dust trapping body 3 is brought into contact with a surface to be cleaned, and the manual cleaning instrument 1 is moved back and forth, whereby dust can be trapped and collected in a dust collection chamber 37. The dust which has been collected can be discharged by opening a lid 28.

Abstract: A toner cartridge provided in an image forming apparatus in a removable manner for supplying toner to the image forming apparatus, the cartridge comprises a toner cartridge main body which contains the toner, a discharging opening for supplying the toner contained in the toner cartridge main body to the image forming apparatus and a shutter which opens the discharging opening when the toner cartridge main body is inserted in the image forming apparatus and closes the discharging opening when the toner cartridge main body is removed from the image forming apparatus, wherein the shutter has a concave part formed therein for engaging with a holding member which holds the shutter provided in the image forming apparatus to open and close the discharging opening when the toner cartridge main body is inserted in or removed from the image forming apparatus.

Abstract: A toner cartridge comprises a toner container which contains toner, a driving member which rotationally drives a conveying member, an agitating member which agitates a toner in the toner container while being rotated, a driven member which rotates in association with the driving member which is for rotationally driving the agitating member, and a rotational body which rotates according to rotation of the driven member, has a plurality of slits in rotational circumference for identifying a type of the toner cartridge, and has 1/K or more of the slits when a ratio of a rotational speed R1 (rad/s) of the driving member and a rotational speed R2 (rad/s) of the driven member is K=R2/R1.

Abstract: A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof.

Abstract: A toner cartridge provided in an image forming apparatus in a removable manner for supplying toner to the image forming apparatus, the cartridge comprises a toner cartridge main body which contains the toner, a discharging opening for supplying the toner contained in the toner cartridge main body to the image forming apparatus and a shutter which opens the discharging opening when the toner cartridge main body is inserted in the image forming apparatus and closes the discharging opening when the toner cartridge main body is removed from the image forming apparatus, wherein the shutter has a concave part formed therein for engaging with a holding member which holds the shutter provided in the image forming apparatus to open and close the discharging opening when the toner cartridge main body is inserted in or removed from the image forming apparatus.

Abstract: The present invention provides a compound represented by Formula (II): wherein R1 is a chlorine atom, a fluorine atom, a methyl group or an ethynyl group; Ar is a group represented by the following Formula (a), Formula (b), Formula (c) or Formula (d): wherein R2 is a C1-6 alkyl group which may be substituted with one or more halogen atoms, a C1-6 alkoxy group which may be substituted with one or more halogen atoms, a C1-3 alkylthio group, a halogen atom, a C1-3 alkylcarbonyl group or a C2-5 alkynyl group which may be substituted with —OR4; R3 is a hydrogen atom or a C1-3 alkyl group; R4 is a hydrogen atom or a C1-3 alkyl group; provided that Ar is a group represented by Formula (a) when R1 is a fluorine atom, methyl group or an ethynyl group, and that R2 is methoxy group, an ethoxy group, an isopropyl group, a propyl group, a trifluoromethyl group, a trifluoromethoxy group, 2-fluoroethyl group or 1-propynyl group when R1 is a methyl group or a pharmaceutically acceptable salt or a solvate thereof a

Abstract: A cyclohexane derivative having the function of reducing a blood sugar level and having preferable properties required of medicines, such as long-lasting drug activity, metabolic stability, and safety; and a medicinal composition for use in the prevention or treatment of diseases attributable to hyperglycemia, such as diabetes, e.g., insulin dependent diabetes mellitus (type 1 diabetes) or noninsulin-dependent diabetes mellitus (type 2 diabetes), complications of diabetes, and obesity.

Abstract: A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

Abstract: A liquid crystal display device includes: a first substrate; a second substrate which is placed nearer to a viewer than the first substrate, and which faces a viewer side of the first substrate; a liquid crystal sandwiched between the first substrate and the second substrate; an upper polarization plate which is placed nearer to the viewer than the second substrate, and which faces a viewer side of the second substrate; and a transparent resin plate which is placed nearer to the viewer than the upper polarization plate, and which is attached to a viewer side of the upper polarization plate with one of an adhesive material and a bonding material, the transparent resin plate includes a transparent oxide film on a face that faces the upper polarization plate, and the transparent resin plate is in close contact with the adhesive material or the bonding material through the transparent oxide film.

Abstract: A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof.

Abstract: A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge.

Abstract: A semiconductor device is designed to facilitate analyzing a position and a cause of the failure of an integrated circuit adopting a polyphase clock. To this end, the semiconductor device is provided with an error detecting unit that detects that a problem of the operation occurs in the integrated circuit, a clock state holding unit that holds the information of phases in a predetermined term of a two- or more-phase clock and an output unit that outputs the information of the phases in the predetermined term of the two- or more-phase clock when the error detecting unit detects that the problem of the operation occurs in the integrated circuit.