Abstract: An inductively-coupled plasma processing apparatus for performing an inductively-coupled plasma processing on a rectangular substrate, includes: a processing container; a mounting table for mounting the substrate thereon; a rectangular metal window provided to be electrically insulated from the processing container while facing the mounting table; and an antenna unit for generating an inductively-coupled plasma inside the processing container. The metal window is divided into divided regions electrically insulated from each other by a first division extending in a radial direction toward each corner portion of the metal window. The antenna unit includes a first high-frequency antenna in which antenna segments having planar portions facing an upper surface of the metal window are arranged. Each antenna segment is configured by spirally winding an antenna wire in a vertical direction orthogonal to the upper surface of the rectangular metal window so that a winding axis is parallel to the upper surface.

Abstract: A batch type processing apparatus for simultaneously processing a plurality of target objects to be processed, includes a main chamber; a plurality of stages, arranged in the main chamber in a height direction of the main chamber, for mounting thereon the target objects; and a plurality of covers, provided to the stages, for covering the target objects mounted on the stages. The stages and the covers surround the target objects mounted on the stages, thereby forming small processing spaces each of which has a capacity smaller than a capacity of the main chamber.

Abstract: Systems, methods and apparatus for processing a substrate are described. A reactor includes a reaction chamber, a composite nozzle, and a reaction chamber outlet. The composite nozzle extends along a side of the chamber and includes a first nozzle and a second nozzle separate from and parallel the first nozzle. Each nozzle includes a body extending along an axis of elongation, an inlet providing communication between at least one source of a common species and an inner volume of the body, and holes spaced along the axis. The holes provide fluid communication between the inner volume and the chamber. The outlet is configured to allow flow from the composite nozzle through the chamber to the outlet. The first nozzle inlet is positioned at a first end of the first body, and the second nozzle inlet is positioned at a second end of the second body. The second end is opposite the first end of the first body.

Abstract: A batch type processing apparatus for simultaneously processing a plurality of target objects to be processed, includes a main chamber; a plurality of stages, arranged in the main chamber in a height direction of the main chamber, for mounting thereon the target objects; and a plurality of covers, provided to the stages, for covering the target objects mounted on the stages. The stages and the covers surround the target objects mounted on the stages, thereby forming small processing spaces each of which has a capacity smaller than a capacity of the main chamber.

Abstract: A plane parallel plasma processing apparatus includes an impedance adjustment unit having a capacitive component, which is disposed between a lower electrode and a processing chamber. The impedance adjustment unit adjusts the value of the impedance over the path extending from an upper electrode to a grounded casing of a matching circuit via plasma, the lower electrode and the wall of the processing chamber to a level lower than the value of the impedance over the path extending from the upper electrode to the grounded casing of the matching circuit via the plasma and the wall of the processing chamber, and thus, highly uniform plasma can be generated by minimizing the generation of plasma in the space between the cathode electrode and the processing chamber wall.

Abstract: A plasma processing system has a susceptor, provided in a processing vessel, for supporting thereon a substrate. A process gas is supplied into the processing vessel to produce the plasma of the process gas. The susceptor has a dielectric film formed on a base, and a plurality of protrusions formed on the film. The protrusions of the susceptor are formed by thermal-spraying a ceramic onto the dielectric film via an aperture plate having a plurality of circular apertures.

Abstract: A plasma processing system has a susceptor, provided in a processing vessel, for supporting thereon a substrate. A process gas is supplied into the processing vessel to produce the plasma of the process gas. The susceptor has a dielectric film formed on a base, and a plurality of protrusions formed on the film. The protrusions of the susceptor are formed by thermal-spraying a ceramic onto the dielectric film via an aperture plate having a plurality of circular apertures.

Abstract: There is disclosed an inductive coupling plasma processing apparatus having a processing chamber for subjecting a substrate G to a plasma processing, a dielectric wall portion constituting an upper part wall portion or a side wall portion of the chamber, a high-frequency antenna, disposed on a corresponding portion of the dielectric wall portion outside the chamber, for forming an induction field in the chamber, a cover member formed of a dielectric material disposed inside the dielectric wall portion to cover the dielectric wall portion, a heater for heating the cover member, and an insulating member for insulating between the dielectric wall portion and the heater, wherein a reaction product generated by a plasma is heated at a temperature without adhering to the cover member, and heat generated by the heater is prevented from being conducted to the dielectric wall portion.

Abstract: There is disclosed an inductive coupling plasma processing apparatus having a processing chamber for subjecting a substrate G to a plasma processing, a dielectric wall portion constituting an upper part wall portion or a side wall portion of the chamber, a high-frequency antenna, disposed on a corresponding portion of the dielectric wall portion outside the chamber, for forming an induction field in the chamber, a cover member formed of a dielectric material disposed inside the dielectric wall portion to cover the dielectric wall portion, a heater for heating the cover member, and an insulating member for insulating between the dielectric wall portion and the heater, wherein a reaction product generated by a plasma is heated at a temperature without adhering to the cover member, and heat generated by the heater is prevented from being conducted to the dielectric wall portion.

Abstract: An inductively-coupled-plasma-processing apparatus includes a main vessel which is partitioned into an antenna chamber and a process chamber by a partition structure. The antenna chamber includes an RF antenna and the process chamber includes a susceptor on which an LCD glass substrate is placed. The partition structure has a dielectric panel constituted of four segments supported by a cross-shaped supporting bracket. The supporting bracket is suspended from the ceiling of the main vessel by a plurality of suspenders. The supporting bracket is used as a case of a showerhead for supplying a process gas into the process chamber.

Abstract: An apparatus according to the present invention includes a cassette in which a plurality of substrates are stored, a contact guide member provided to face a side surface of the cassette, and pressing end surfaces of substrates stored in the cassette, an alignment device for moving the contact guide member to approach the cassette, and pressing the contact guide member against the end surfaces of the substrates in the cassette, thereby aligning the substrates all at one pressing time, and detectors, provided for the alignment device at positions corresponding to spaces of substrates held in the cassette, in the same or multiple number of the spaces for holding substrates, for detecting whether or not a substrate is present in each of the spaces for holding the substrates of the cassette.