Patents by Inventor Tsutomu Sone

Tsutomu Sone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090250721
    Abstract: Disclosed is an electrical surge protective apparatus comprising: a base region containing impurities of a first conductivity type; a first semiconductor region containing impurities of a second conductivity type; a second semiconductor region containing impurities of the same conductivity type as that of the second conductivity type; and a high resistance region having a lower impurity concentration than the second semiconductor region. The first semiconductor region is joined to the base region on its upper surface side. The second semiconductor region is joined to the base region on its lower surface side. The high resistance region is electrically connected to both the base region and the second semiconductor region.
    Type: Application
    Filed: April 3, 2009
    Publication date: October 8, 2009
    Applicant: NEC ELECTRONICS CORPORATION
    Inventors: Tsutomu SONE, Osamu OONISHI
  • Patent number: 5650645
    Abstract: A semiconductor device having a field-effect transistor has a MOS capacitor formed on a principal surface of a semiconductor substrate of the semiconductor device, and connecting a first and a second electrodes of the MOS capacitor to a source electrode and a drain electrode, respectively, of the field-effect transistor.
    Type: Grant
    Filed: February 29, 1996
    Date of Patent: July 22, 1997
    Assignee: NEC Corporation
    Inventors: Tsutomu Sone, Toshinori Nishii, Keizo Hagimoto, Yasuhiro Koseki