Abstract: An exposure apparatus includes a controller configured to control scanning of an original holding unit and a substrate holding unit to expose a first pattern forming area onto a plurality of second pattern forming areas formed in advance on the substrate. The first pattern forming area is superimposed on the plurality of second pattern forming areas. An original may include the first pattern forming area in plural. The controller is configured to change the operation of the original holding unit or the substrate holding unit among the plurality of second pattern forming areas based on a state of the second pattern forming areas or a state of the first pattern forming areas while the first pattern forming areas are scanning-exposed onto the plurality of second pattern forming areas in a single scanning between the original holding unit and the substrate holding unit.

Abstract: An exposure apparatus comprises an original stage which holds an original, a substrate stage which holds a substrate, and a control unit which controls a measurement process of measuring a relative position between the original and substrate stages, wherein original-side measurement marks including an original-side rough-measurement mark and an original-side fine-measurement mark are formed on the original stage, substrate-side measurement marks including a substrate-side rough-measurement mark and a substrate-side fine-measurement mark are formed on the substrate stage, and the control unit controls the measurement process to perform rough measurement of the relative position between the original and substrate stages using the original-side and the substrate-side rough-measurement marks, correct the relative position between the original and substrate stages based on the result of the rough measurement, and then perform fine measurement of the relative position between the original and substrate stages using

Abstract: An exposure apparatus comprises a controller configured to control scanning of an original holding unit and a substrate holding unit so as to expose a first pattern forming area onto a second pattern forming area exposed in advance on the substrate via a second projection optical system having a second projection magnification differing from a first projection magnification with the first pattern forming area superimposed on the second pattern forming areas. In particular, the controller changes the operation of the original holding unit or the substrate holding unit among the plurality of second pattern forming areas based on the state of the second pattern forming areas or the state of the patterns formed on the original while the first pattern forming areas are scanning-exposed onto the plurality of second pattern forming areas in a single scanning between the original holding unit and the substrate holding unit.

Abstract: An exposure apparatus comprises a measurement system which measures an aberration of a projection optical system. The measurement system includes a first pattern positioned on an original stage, a second pattern positioned on a substrate stage, a third pattern positioned on the original stage to align the first and second patterns, a fourth pattern positioned on the substrate stage to align the first and second patterns, a detection system which detects a relative position between the third pattern and the fourth pattern, and a controller which controls at least one of the stages to align the first pattern positioned at a position spaced apart from the third pattern by a predetermined distance, and the second pattern positioned at a position spaced apart from the fourth pattern by a predetermined distance, based on the relative position between the third pattern and the fourth pattern detected by the detection system.

Abstract: An exposure apparatus which projects a pattern of an original onto a substrate by a projection optical system, comprises a measurement device configured to measure a relative position between an original stage and a substrate stage via the projection optical system using an original-side fiducial plate and a substrate-side fiducial plate, and a controller, the original-side fiducial plate including first and second original-side marks, and the substrate-side fiducial plate including first and second substrate-side marks, wherein the controller is configured to control imaging characteristics of the projection optical system so that measurement of the relative position between the original stage and the substrate stage using the first original-side mark and the first substrate-side mark and measurement of the relative position between the original stage and the substrate stage using the second original-side mark and the second substrate-side mark can be performed simultaneously.

Abstract: An exposure apparatus which projects a pattern of an original onto a substrate by a projection optical system, comprises a measurement device configured to measure a relative position between an original stage and a substrate stage via the projection optical system using an original-side fiducial plate and a substrate-side fiducial plate, and a controller, the original-side fiducial plate including first and second original-side marks, and the substrate-side fiducial plate including first and second substrate-side marks, wherein the controller is configured to control imaging characteristics of the projection optical system so that measurement of the relative position between the original stage and the substrate stage using the first original-side mark and the first substrate-side mark and measurement of the relative position between the original stage and the substrate stage using the second original-side mark and the second substrate-side mark can be performed simultaneously.

Abstract: An exposure apparatus includes an illumination optical system configured to illuminate an original with exposure light from an exposure light source, a projection optical system configured to project a pattern of the original onto a substrate, and a measuring unit configured to measure a relative position between the original and the substrate via the projection optical system using the exposure light as measurement light. The exposure apparatus exposes the substrate using the exposure light with a plurality of wavelengths or a broadband wavelength upon aligning the original and the substrate based on the measurement result obtained by the measuring unit, and the measuring unit switches a wavelength of the exposure light as the measurement light to a specific wavelength or a narrow-band wavelength in measuring the relative position between the original and the substrate.

Abstract: An exposure apparatus comprises a measurement system which measures an aberration of a projection optical system. The measurement system includes a first pattern positioned on an original stage, a second pattern positioned on a substrate stage, a third pattern positioned on the original stage to align the first and second patterns, a fourth pattern positioned on the substrate stage to align the first and second patterns, a detection system which detects a relative position between the third pattern and the fourth pattern, and a controller which controls at least one of the stages to align the first pattern positioned at a position spaced apart from the third pattern by a predetermined distance, and the second pattern positioned at a position spaced apart from the fourth pattern by a predetermined distance, based on the relative position between the third pattern and the fourth pattern detected by the detection system.

Abstract: A memory device may include, but is not limited to, at least one memory module, and a plurality of lumped constant circuit elements. The at least one memory module is electrically coupled to a transmission system that has a characteristic impedance. The plurality of lumped constant circuit elements with an inductance is placed on the transmission system symmetrically with reference to the at least one memory module. The plurality of lumped constant circuit elements in cooperation with the at least one memory module performs as at least one low-pass filter.

Abstract: An exposure apparatus comprises an original stage which holds an original, a substrate stage which holds a substrate, and a control unit which controls a measurement process of measuring a relative position between the original and substrate stages, wherein original-side measurement marks including an original-side rough-measurement mark and an original-side fine-measurement mark are formed on the original stage, substrate-side measurement marks including a substrate-side rough-measurement mark and a substrate-side fine-measurement mark are formed on the substrate stage, and the control unit controls the measurement process to perform rough measurement of the relative position between the original and substrate stages using the original-side and the substrate-side rough-measurement marks, correct the relative position between the original and substrate stages based on the result of the rough measurement, and then perform fine measurement of the relative position between the original and substrate stages using

Abstract: An exposure apparatus comprises an illumination optical system configured to illuminate an original with exposure light from an exposure light source, a projection optical system configured to project a pattern of the original onto a substrate, and a measuring unit configured to measure a relative position between the original and the substrate via the projection optical system using the exposure light as measurement light. The exposure apparatus exposes the substrate using the exposure light with a plurality of wavelengths or a broadband wavelength upon aligning the original and the substrate based on the measurement result obtained by the measuring unit, and the measuring unit switches a wavelength of the exposure light as the measurement light to a specific wavelength or a narrow-band wavelength in measuring the relative position between the original and the substrate.

Abstract: The invention disclosed herein concerns technology that ensures, in a projection exposure process using a transmission type reticle, exposure with an even finish size throughout the entire exposure region, without adverse influence of external disturbance light such as back-surface reflection, for example.

Abstract: A microwave transmission line includes a substrate of high-resistivity silicon, a first dielectric film and a second dielectric film successively formed on the principal surface of the substrate and having different compositions, and a conductor film formed with at least the first dielectric film interposed between the conductor film and the substrate. One of the first and second dielectric films has positive space charges and the other has negative space charges. A signal electric field propagates through the substrate, the first dielectric film and the second dielectric film.

Abstract: The present invention is directed to a photoconductive switch module. The photoconductive switch module comprises a first substrate having light-emitting elements, and a second substrate having photoconductive switch elements, whose number is equal to that of the light-emitting elements. The light-emitting elements face the photoconductive switch elements, so that the photoconductive switch elements are turned on/off in accordance with lighting/extinction of the light-emitting elements. The photoconductive switch module further comprises a third substrate arranged between the first substrate and the second substrate. The third substrate has through holes, whose number is equal to that of the light-emitting elements. Each through hole is positioned between a light-emitting element and a photoconductive switch element facing each other. Drive light emitted from each light-emitting element travels to the photoconductive switch element via the through hole.

Abstract: A transmission line is inserted and connected between each two adjacent switching elements connected in series. The total of the amount of transmission characteristic phase change of each transmission line, and the amount of reflection characteristic phase change caused by a parasitic capacitance in an OFF state in each switching element is set approximately equal to 90 degrees at the upper limit of using frequency. According to this configuration, a filter having a pass band at twice the using frequency is constructed so that the signal is cut off at the using frequency. This improves the leakage suppression characteristics. Further, the impedance of each transmission line is set equal to the input-output characteristic impedance of the circuit. This minimizes an additional insertion loss caused by the insertion of the transmission lines.

Abstract: A device and manufacturing method are provided that comprises forming first and second substrates joined together and comprising a main channel provided in at least one of the substrates and a connecting channel provided in at least one of the substrates, the connecting channel connected to the main channel, and the main channel having spaced apart electrodes and at least partially filled with liquid metal. The method further comprises forming a heater substrate comprising a suspended heater element in fluid communication with the connecting channel, the suspended heater element operable to cause a fluid non-conductor to separate the liquid metal and selectively interconnect the electrodes, and providing a high-frequency signal loss reduction structure between the main channel and the heater substrate.

Abstract: A microwave transmission line includes a substrate of high-resistivity silicon, a first dielectric film and a second dielectric film successively formed on the principal surface of the substrate and having different compositions, and a conductor film formed with at least the first dielectric film interposed between the conductor film and the substrate. One of the first and second dielectric films has positive space charges and the other has negative space charges. A signal electric field propagates through the substrate, the first dielectric film and the second dielectric film.

Abstract: A device and manufacturing method are provided comprising first and second substrates comprising a main channel provided in at least one of the substrates and a first connecting channel provided in at least one of the substrates and in fluid communication with the main channel. The main channel comprising spaced apart electrodes and filling the main channel at least partially with liquid metal. The method further comprising a first heater substrate comprising a first suspended heater element in fluid communication with the first connecting channel with the first suspended heater element operable to cause a fluid non-conductor to separate the liquid metal and selectively interconnect the electrodes and surface joining the first, second, and first heater substrates.

Abstract: The invention disclosed herein concerns technology that ensures, in a projection exposure process using a transmission type reticle, exposure with an even finish size throughout the entire exposure region, without adverse influence of external disturbance light such as back-surface reflection, for example.

Abstract: A device and manufacturing method are provided comprising first and second substrates comprising a main channel provided in at least one of the substrates and a first connecting channel provided in at least one of the substrates and in fluid communication with the main channel. The main channel comprising spaced apart electrodes and filling the main channel at least partially with liquid metal. The method further comprising a first heater substrate comprising a first suspended heater element in fluid communication with the first connecting channel with the first suspended heater element operable to cause a fluid non-conductor to separate the liquid metal and selectively interconnect the electrodes and surface joining the first, second, and first heater substrates.