Abstract: A thermoelectric conversion element includes a P-type thermoelectric conversion layer, a first metal layer, a second metal layer, a first joining layer, and a second joining layer. The P-type thermoelectric conversion layer includes a thermoelectric conversion material containing Mg and at least one selected from the group consisting of Sb and Bi. The first metal layer and the second metal layer each include Cu or a Cu alloy. The first joining layer and the second joining layer each include Al or an Al alloy containing Mg.

Abstract: A fabrication method of a thermoelectric conversion element includes forming a first metal layer containing Cu on a first surface of a thermoelectric conversion layer, and forming a first electrode and a first intermediate layer from the first metal layer. The thermoelectric conversion layer is composed of a thermoelectric conversion material containing Mg and at least one kind of element selected from the group consisting of Sb and Bi, the first intermediate layer is provided between the thermoelectric conversion layer and the first electrode, the first intermediate layer is in contact with the thermoelectric conversion layer, the first electrode is in contact with the first intermediate layer, and a composition of the first intermediate layer is different from both a composition of the first electrode and a composition of the thermoelectric conversion layer.

Abstract: A thermoelectric conversion element includes a p-type thermoelectric conversion layer, a first metal layer, a second metal layer, a first bonding layer, and a second bonding layer. The thermoelectric conversion layer is composed of a p-type thermoelectric conversion material containing a Mg3(Sb,Bi)2-based alloy as a main phase and containing carbon. At least one of the first bonding layer or the second bonding layer contains Al and Si.

Abstract: A thermoelectric conversion material of the present disclosure is a p-type thermoelectric conversion material which includes an alloy containing Mg and Bi as a main phase and which contains carbon. The thermoelectric conversion material includes, for example, a Mg3(Sb,Bi)2-based alloy as the main phase. An atomic percentage of Bi included in the main phase is greater than or equal to an atomic percentage of Sb included in the main phase. The thermoelectric conversion material satisfies, for example, 0.01 at %?CC?1.2 at %, where CC represents a content ratio of carbon in the thermoelectric conversion material.

Abstract: A high-frequency module has an antenna configured by integrally connecting a slot plate laid out with radiation slots to a plate having plural thin plates formed with a waveguide for supplying power to the slot plate, using a diffusion bonding. The waveguide of the antenna is connected to a dielectric waveguide of a high-frequency package via a waveguide provided on a resin substrate, thereby configuring a slot antenna at low cost, and connecting a power-supply slot of the slot antenna to a waveguide terminal of the high-frequency package with low loss.

Abstract: Heretofore, a plurality of packages were used in a high frequency module in which a plurality of waveguide terminals were positioned resulting in problems, such as degradation of characteristics in the connection lines between packages, lower ease of assembly when mounting and connecting the connection lines, increased cost, and so forth. To solve these problems, a plurality of cavities having a part or the entire side metallized is formed in a multi-layer dielectric substrate. The multi-layer dielectric substrate is provided with a plurality of waveguide terminals, microstrip line-waveguide converters, RF lines, bias and control signal wiring, and bias and control signal pads. A high frequency circuit is mounted within the cavity and sealed with a seal and cover. This is intended to reduce the number of package, improve performance, improve fabrication, and lower the cost.

Abstract: Conventionally, waveguide terminals formed in a plurality of dielectric substrates are joined together by mounting the dielectric substrates on carriers and fastening them to a waveguide adapter with screws. In the present invention, to reduce cost and improve machinability, a plurality of solders 7 are disposed around the waveguide terminal 2b formed in one dielectric substrate 1b, and the other dielectric substrate 1a having the waveguide terminal 2a is placed across the solders 7 to thereby connect the waveguide terminals by soldering.

Abstract: Conventionally, waveguide terminals formed in a plurality of dielectric substrates are joined together by mounting the dielectric substrates on carriers and fastening them to a waveguide adapter with screws. In the present invention, to reduce cost and improve machinability, a plurality of solders 7 are disposed around the waveguide terminal 2b formed in one dielectric substrate 1b, and the other dielectric substrate 1a having the waveguide terminal 2a is placed across the solders 7 to thereby connect the waveguide terminals by soldering.

Abstract: To provide a high-frequency module having an antenna configured by integrally connecting a slot plate laid out with radiation slots to a plate having plural thin plates formed with a waveguide for supplying power to the slot plate, using a diffusion bonding. The waveguide of the antenna is connected to a dielectric waveguide of a high-frequency package via a waveguide provided on a resin substrate, thereby configuring a slot antenna at low cost, and connecting a power-supply slot of the slot antenna to a waveguide terminal of the high-frequency package with low loss.

Abstract: A multilayer dielectric substrate includes a first signal via, a second signal via, an internal-layer signal line, an internal-layer ground conductor, and ground vias. The first signal via is connected to a bias-and-control-signal terminal of a high-frequency semiconductor, and is arranged within a region corresponding to the electromagnetic shielding members. The second signal via is arranged outside the region, and is connected to an external terminal for a bias and control signal. The internal-layer signal line connects between the first and the second signal vias. The internal-layer ground conductor is arranged around the first and the second signal vias and the internal-layer signal line. The ground vias are arranged around the first and the second signal vias and the internal-layer signal line, on the internal-layer ground conductor. A resistance film is provided on at least one of an upper surface and a lower surface of the internal-layer signal line.

Abstract: Heretofore, a plurality of packages were used in a high frequency module in which a plurality of waveguide terminals were positioned resulting in problems, such as degradation of characteristics in the connection lines between packages, lower ease of assembly when mounting and connecting the connection lines, increased cost, and so forth. To solve these problems, a plurality of cavities having a part or the entire side metallized is formed in a multi-layer dielectric substrate. The multi-layer dielectric substrate is provided with a plurality of waveguide terminals, microstrip line-waveguide converters, RF lines, bias and control signal wiring, and bias and control signal pads. A high frequency circuit is mounted within the cavity and sealed with a seal and cover. This is intended to reduce the number of package, improve performance, improve fabrication, and lower the cost.

Abstract: Conventionally, waveguide terminals formed in a plurality of dielectric substrates are joined together by mounting the dielectric substrates on carriers and fastening them to a waveguide adapter with screws. In the present invention, to reduce cost and improve machinability, a plurality of solders 7 are disposed around the waveguide terminal 2b formed in one dielectric substrate 1b, and the other dielectric substrate 1a having the waveguide terminal 2a is placed across the solders 7 to thereby connect the waveguide terminals by soldering.

Abstract: Conventionally, waveguide terminals formed in a plurality of dielectric substrates are joined together by mounting the dielectric substrates on carriers and fastening them to a waveguide adapter with screws. In the present invention, to reduce cost and improve machinability, a plurality of solders 7 are disposed around the waveguide terminal 2b formed in one dielectric substrate 1b, and the other dielectric substrate 1a having the waveguide terminal 2a is placed across the solders 7 to thereby connect the waveguide terminals by soldering.

Abstract: Conventionally, waveguide terminals formed in a plurality of dielectric substrates are joined together by mounting the dielectric substrates on carriers and fastening them to a waveguide adapter with screws. In the present invention, to reduce cost and improve machinability, a plurality of solders 7 are disposed around the waveguide terminal 2b formed in one dielectric substrate 1b, and the other dielectric substrate 1a having the waveguide terminal 2a is placed across the solders 7 to thereby connect the waveguide terminals by soldering.

Abstract: A multilayer dielectric substrate includes a first signal via, a second signal via, an internal-layer signal line, an internal-layer ground conductor, and ground vias. The first signal via is connected to a bias-and-control-signal terminal of a high-frequency semiconductor, and is arranged within a region corresponding to the electromagnetic shielding members. The second signal via is arranged outside the region, and is connected to an external terminal for a bias and control signal. The internal-layer signal line connects between the first and the second signal vias. The internal-layer ground conductor is arranged around the first and the second signal vias and the internal-layer signal line. The ground vias are arranged around the first and the second signal vias and the internal-layer signal line, on the internal-layer ground conductor. A resistance film is provided on at least one of an upper surface and a lower surface of the internal-layer signal line.

Abstract: Heretofore, a plurality of packages were used in a high frequency module in which a plurality of waveguide terminals were positioned resulting in problems, such as degradation of characteristics in the connection lines between packages, lower ease of assembly when mounting and connecting the connection lines, increased cost, and so forth. To solve these problems, a plurality of cavities having a part or the entire side metallized is formed in a multi-layer dielectric substrate. The multi-layer dielectric substrate is provided with a plurality of waveguide terminals, microstrip line-waveguide converters, RF lines, bias and control signal wiring, and bias and control signal pads. A high frequency circuit is mounted within the cavity and sealed with a seal and cover. This is intended to reduce the number of package, improve performance, improve fabrication, and lower the cost.

Abstract: Conventionally, waveguide terminals formed in a plurality of dielectric substrates are joined together by mounting the dielectric substrates on carriers and fastening them to a waveguide adapter with screws. In the present invention, ot reduce cost and improve machinability, a plurality of solders 7 are disposed around the waveguide terminal 2b formed in one dielectric substrate 1b, and the other dielectric substrate 1a having the waveguide terminal 2a is placed across the solders 7 to thereby connect the waveguide terminals by soldering.

Abstract: Conventionally, waveguide terminals formed in a plurality of dielectric substrates are joined together by mounting the dielectric substrates on carriers and fastening them to a waveguide adapter with screws. In the present invention, ot reduce cost and improve machinability, a plurality of solders 7 are disposed around the waveguide terminal 2b formed in one dielectric substrate 1b, and the other dielectric substrate 1a having the waveguide terminal 2a is placed across the solders 7 to thereby connect the waveguide terminals by soldering.

Abstract: Conventionally, waveguide terminals formed in a plurality of dielectric substrates are joined together by mounting the dielectric substrates on carriers and fastening them to a waveguide adapter with screws. In the present invention, ot reduce cost and improve machinability, a plurality of solders 7 are disposed around the waveguide terminal 2b formed in one dielectric substrate 1b, and the other dielectric substrate 1a having the waveguide terminal 2a is placed across the solders 7 to thereby connect the waveguide terminals by soldering.

Abstract: Heretofore, a plurality of packages were used in a high frequency module in which a plurality of waveguide terminals were positioned resulting in problems, such as degradation of characteristics in the connection lines between packages, lower ease of assembly when mounting and connecting the connection lines, increased cost, and so forth. To solve these problems, a plurality of cavities having a part or the entire side metallized is formed in a multi-layer dielectric substrate. The multi-layer dielectric substrate is provided with a plurality of waveguide terminals, microstrip line-waveguide converters, RF lines, bias and control signal wiring, and bias and control signal pads. A high frequency circuit is mounted within the cavity and sealed with a seal and cover. This is intended to reduce the number of package, improve performance, improve fabrication, and lower the cost.