Patents by Inventor Tsutomu Tsukada

Tsutomu Tsukada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9120072
    Abstract: Provided is an ammonia detoxification device that, when detoxifying ammonia by thermal decomposition, is capable of preventing the generation of nitrogen oxides. That is, the problem is solved by configuring the ammonia detoxification device using: an electric heater; an ammonia decomposition chamber that accepts an ammonia-containing gas to be treated and thermally decomposes the ammonia in the absence of oxygen using heat from the electric heater; a thermally decomposed gas-burning chamber that accepts the nitrogen- and hydrogen-containing gas to be treated that has been generated by the thermal decomposition of the ammonia and discharged from the ammonia decomposition chamber, and an air-supplying means for supplying air from the outside into the thermally the thermally decomposed gas-burning chamber to burn the hydrogen.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: September 1, 2015
    Assignee: KANKEN TECHNO CO., LTD.
    Inventors: Tsutomu Tsukada, Hiroshi Imamura, Hiroki Kuzuoka, Hiroaki Kaneshiro, Isamu Nagai, Takashi Kataoka
  • Publication number: 20140056785
    Abstract: Provided is an ammonia detoxification device that, when detoxifying ammonia by thermal decomposition, is capable of preventing the generation of nitrogen oxides. That is, the problem is solved by configuring the ammonia detoxification device using: an electric heater; an ammonia decomposition chamber that accepts an ammonia-containing gas to be treated and thermally decomposes the ammonia in the absence of oxygen using heat from the electric heater; a thermally decomposed gas-burning chamber that accepts the nitrogen- and hydrogen-containing gas to be treated that has been generated by the thermal decomposition of the ammonia and discharged from the ammonia decomposition chamber, and an air-supplying means for supplying air from the outside into the thermally the thermally decomposed gas-burning chamber to burn the hydrogen.
    Type: Application
    Filed: February 2, 2012
    Publication date: February 27, 2014
    Applicant: KANKEN TECHNO CO., LTD.
    Inventors: Tsutomu Tsukada, Hiroshi Imamura, Hiroki Kuzuoka, Hiroaki Kaneshiro, Isamu Nagai, Takashi Kataoka
  • Publication number: 20090260974
    Abstract: The present invention provides a method and apparatus for manufacturing halogen gas using a plasma chemical reaction, with the features of having simplicity, practicality, and maintaining safety in handling source materials and of being able to manufacture halogen gas in the same facility where halogen gas is used, and also provides a halogen gas circulatory and recovery system capable of circulating and using halogen gas efficiently. After the gas expressed in the chemical formula AiXj (A represents metallic element or semiconductor element, X represents halogen element, and i and j represent integers) is introduced into a reaction container in vacuum, plasmas are generated in the reaction container to produce a plasma chemical reaction. Fine particles produced by the plasma chemical reaction and containing an element other than halogen element as the major constituent are removed from the reaction container so as to generate halogen gas in the reaction container.
    Type: Application
    Filed: June 18, 2009
    Publication date: October 22, 2009
    Inventors: Yoichiro Numasawa, Tsutomu Tsukada
  • Publication number: 20070086939
    Abstract: The present invention provides a method and apparatus for manufacturing halogen gas using a plasma chemical reaction, with the features of having simplicity, practicality, and maintaining safety in handling source materials and of being able to manufacture halogen gas in the same facility where halogen gas is used, and also provides a halogen gas circulatory and recovery system capable of circulating and using halogen gas efficiently. After the gas expressed in the chemical formula AiXj (A represents metallic element or semiconductor element, X represents halogen element, and i and j represent integers) is introduced into a reaction container in vacuum, plasmas are generated in the reaction container to produce a plasma chemical reaction. Fine particles produced by the plasma chemical reaction and containing an element other than halogen element as the major constituent are removed from the reaction container so as to generate halogen gas in the reaction container.
    Type: Application
    Filed: December 15, 2006
    Publication date: April 19, 2007
    Inventors: Yoichiro Numasawa, Tsutomu Tsukada
  • Publication number: 20040035691
    Abstract: The present invention provides a method and apparatus for manufacturing halogen gas using a plasma chemical reaction, with the features of having simplicity, practicality, and maintaining safety in handling source materials and of being able to manufacture halogen gas in the same facility where halogen gas is used, and also provides a halogen gas circulatory and recovery system capable of circulating and using halogen gas efficiently. After the gas expressed in the chemical formula AiXj (A represents metallic element or semiconductor element, X represents halogen element, and i and j represent integers) is introduced into a reaction container in vacuum, plasmas are generated in the reaction container to produce a plasma chemical reaction. Fine particles produced by the plasma chemical reaction and containing an element other than halogen element as the major constituent are removed from the reaction container so as to generate halogen gas in the reaction container.
    Type: Application
    Filed: August 19, 2003
    Publication date: February 26, 2004
    Inventors: Yoichiro Numasawa, Tsutomu Tsukada
  • Patent number: 6199505
    Abstract: A plasma processing apparatus includes a cathode 54 having a large diameter part 56 and a long thin small diameter part 58, and the upper end surface of the large diameter part 56 faces the plasma forming space 76. The substrate 66 which is to be processed is mounted on the upper end surface of the large diameter part 56. The lower end of the small diameter part 58 is connected via the matching circuit 60 to the high frequency power source 62. The transmission path within the chamber comprises a large diameter coaxial line, a small diameter coaxial line and a radial line which connects them. The large diameter coaxial line includes the large diameter part 56, the first side wall 42 and the insulator 70. The radial line includes the lower surface of the large diameter part 56, the upper surface of the bottom plate 46 and the gap 72 between them. The small diameter coaxial line includes the small diameter part 58, the second side wall 68 and the gap 74.
    Type: Grant
    Filed: February 16, 1999
    Date of Patent: March 13, 2001
    Assignee: Anelva Corporation
    Inventors: Hisaaki Sato, Tsutomu Tsukada, Shigeru Mizuno, Nobuaki Tsuchiya
  • Patent number: 6043608
    Abstract: This invention discloses a plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas. This apparatus comprises a vacuum chamber having a pumping system, a substrate holder for placing the substrate to be processed in the vacuum chamber, a gas introduction means for introducing the plasma generation gas into a plasma generation space, an energy supply means for supplying the RF energy with the plasma generation gas. The antenna has multiple antenna elements provided symmetrically to the center on the axis of the substrate and an end shorting member shorting each end of the antenna elements so that an RF current path symmetrical to the center is applied. Multiple circuits resonant at a frequency of the RF energy are formed symmetrically of the antenna elements and the end shorting member.
    Type: Grant
    Filed: October 31, 1997
    Date of Patent: March 28, 2000
    Assignees: NEC Corporation, Anelva Corporation, Nihon Koshuha Co., Ltd.
    Inventors: Seiji Samukawa, Yukito Nakagawa, Hisaaki Sato, Tsutomu Tsukada, Kibatsu Shinohara, Yasuo Niimura
  • Patent number: 6016765
    Abstract: A plasma processing apparatus is furnished with a reactor which is furnished with a susceptor 12, a reaction gas delivery mechanism which delivers reaction gas to the inside of the reactor, a pumping mechanism 24 which pumps out an interior of the reactor, and a plasma-generating mechanism. The reactor is made of metal, the plasma-generating mechanism includes an at least single-winding coil 16 which produces an induced electric field, and the coil is established within the reactor and surrounding the plasma-generating space in a state surrounded by dielectrics parts 15 and 17.
    Type: Grant
    Filed: August 4, 1997
    Date of Patent: January 25, 2000
    Assignee: Anelva Corporation
    Inventors: Yoichiro Numasawa, Shinya Hasegawa, Tsutomu Tsukada, Nobuyuki Takahashi
  • Patent number: 5961776
    Abstract: A surface processing apparatus includes a microwave generator which generates low UHF band microwaves of from 300 MHz to 1 GHz, a cavity resonator in which the microwaves generated in the microwave generator resonate in the TM 010 mode, an airtight process chamber which is connected to the cavity resonator, a radiation plate which is arranged in a part of the cavity resonator which is connected with the process chamber, the radiation plate has a plurality of radiation holes which are established symmetrically with respect to a central axis of the cavity resonator, and cover plates made of a dielectric material which close off the radiation holes in an airtight manner.
    Type: Grant
    Filed: November 19, 1997
    Date of Patent: October 5, 1999
    Assignee: Anelva Corporation
    Inventors: Hisaaki Sato, Yukito Nakagawa, Ken-ichi Takagi, Tomoaki Koide, Tsutomu Tsukada
  • Patent number: 5936352
    Abstract: A plasma processing apparatus includes a plasma chamber and an antenna formed by a first set of parallel antenna elements and a second set of parallel antenna elements, the antenna elements of the first set being interdigitally arranged with those of the second set. An energy source supplies oscillation energy of first phase to the first set of antenna elements and oscillation energy of second, opposite phase to the second set of antenna elements to produce oppositely moving energy fields in the chamber at such a frequency that electrons are confined in a plasma produced in the chamber.
    Type: Grant
    Filed: November 20, 1996
    Date of Patent: August 10, 1999
    Assignees: NEC Corporation, Nihon Koshua Co., Ltd., Anelva Corporation
    Inventors: Seiji Samukawa, Tsutomu Tsukada, Yukito Nakagawa, Kibatsu Shinohara, Hirofumi Matsumoto, Hiroyuki Ueyama
  • Patent number: 5900699
    Abstract: The plasma generator includes a plasma generation chamber which is pumped and into which plasma generation gas is introduced. An antenna provided outside the plasma generation chamber, a RF source supplying a RF power with the antenna to excite the antenna. A part or whole of the plasma generation chamber is made of dielectric. The antenna radiates the RF through the dielectric and includes an antenna element which longitudinal direction is vertical to the direction for the plasma. The plasma generation chamber has a side wall intersecting the longitudinal direction of the antenna element at both sides. A part or whole of a plasma generation chamber is made of dielectric having relative permittivity .epsilon..sub.S. The antenna radiates a RF through the dielectric and is comprised of multiple antenna elements which longitudinal directions are on a plane vertical to the direction for the plasma.
    Type: Grant
    Filed: June 16, 1997
    Date of Patent: May 4, 1999
    Assignees: Nec Corporation, Anelva Corporation, Nihon Koshuha Co., Ltd.
    Inventors: Seiji Samukawa, Tsutomu Tsukada, Yukito Nakagawa, Kibatsu Shinohara, Hiroyuki Ueyama
  • Patent number: 5565738
    Abstract: A plasma processing apparatus comprises a plasma chamber having a gas inlet opening and a gas outlet opening. A first high-frequency energy source supplies accelerating energy to a holder that supports a semiconductor specimen within the chamber to produce a high-frequency accelerating electric field. Gas is introduced to the chamber through the inlet opening and accelerated by the electric field toward the specimen. An antenna structure is connected to a second high-frequency energy source which supplies exciting energy at a frequency in the range between 100 MHz and 1 GHz which is higher than the frequency of the accelerating energy. The antenna structure has radially outwardly extending, circumferentially equally spaced apart elements of length equal to the quarter wavelength of the exciting energy so that there is a phase difference of 180 degrees between adjacent ones of the antenna elements. The accelerated gas is uniformly excited and converted to high-density plasma.
    Type: Grant
    Filed: May 12, 1995
    Date of Patent: October 15, 1996
    Assignees: NEC Corporation, Nihon Koshuha Co., Ltd., Anelva Corporation
    Inventors: Seiji Samukawa, Kibatsu Shinohara, Hirobumi Matsumoto, Tsutomu Tsukada, Yukito Nakagawa
  • Patent number: 5087341
    Abstract: A dry etching apparatus with the use of reactive gas plasma is disclosed. The apparatus comprises a vacuum chamber, and first and second electrodes opposite to each other in the chamber for generating therebetween gas plasma by discharging while introducing reactive gas in the chamber thereby etching a sample placed on the first electrode. A cover member is provided for covering at least the periphery portion positioned at the outer side of the sample on the surface of the first electrode. The reactive gas introducer is provided on the second electrode at the position opposite to the sample thereby directing the gas to the sample.
    Type: Grant
    Filed: June 18, 1990
    Date of Patent: February 11, 1992
    Assignee: ANELVA Corporation
    Inventors: Tsutomu Tsukada, Etsuo Wani, Koki Yasuda
  • Patent number: 4968374
    Abstract: A dry etching apparatus has a vacuum chamber provided therein with an RF electrode. On the RF electrode an object substrate(s) is placed. The RF electrode is covered with a substrate bed(s) and detachable dielectric members. The substrate bed(s) includes a dielectric portion and a conductive portion provided just under the dielectric portion. The conductive portion is equipotential in terms of direct current to the RF electrode. At least one gap extension is consituted of a gap(s) between the dielectric members, a gap(s) between the dielectric members and the substrate bed(s), etc. and extends from the surface of the RF electrode to the plasma space. The gap extension(s) extends zigzaggedly from the RF electrode to the plasma space so that the plasma space can not structurally be viewed from the surface of the RF electrode irrespective the dimesions of the substrate.
    Type: Grant
    Filed: June 1, 1989
    Date of Patent: November 6, 1990
    Assignee: Anelva Corporation
    Inventors: Tsutomu Tsukada, Toshio Tamaki, Tatsuhiko Yoshida
  • Patent number: 4950956
    Abstract: A plasma processing apparatus comprises a vacuum vessel, an anode and a cathode arranged in the vacuum vessel, and a discharge producing power source for intermittently producing main discharge between the anode and the cathode to process a substrate arranged in the proximity of the anode and the cathode. The discharge producing power source comprises a magnetic field setting device including magnetic coils arranged closely to the vacuum vessel and having pole pieces and alternate current power sources for the magnetic coils. The plasma processing apparatus is able to remarkably increase processing speeds and considerably reduce the temperature rise and damage therefrom of substrates to be processed. Moreover, the magnetic field setting device is arranged in a small size to make the plasma processing apparatus compact and small-sized.
    Type: Grant
    Filed: September 15, 1987
    Date of Patent: August 21, 1990
    Assignee: Anelva Corporation
    Inventors: Tatsuo Asamaki, Kiyoshi Hoshino, Katsumi Ukai, Yoichi Ino, Toshio Adachi, Tsutomu Tsukada
  • Patent number: 4816638
    Abstract: A vacuum processing apparatus comprising a load-lock chamber, a vacuum transferring chamber and a processing chamber respectively having evacuating systems for evacuating the respective chambers. The load-lock chamber has a first isolation valve for isolating and opening communication of the load-lock chamber with the atmosphere and a second isolating valve for isolating and opening communication of the load-lock chamber with the vacuum transferring chamber. The processing chamber comprises a vessel detachably located at an arranging aperture formed in a wall of the vacuum transferring chamber and closing the arranging aperture in an air-tight manner from the outside of the apparatus. A substrate arranging portion is arranged in the vacuum transferring chamber so as to be move toward and away from the vessel to form an air-tight chamber space in the vessel isolated from the vacuum transferring chamber when the substrate arranging portion has moved to the vessel.
    Type: Grant
    Filed: October 20, 1987
    Date of Patent: March 28, 1989
    Assignee: Anelva Corporation
    Inventors: Katsumi Ukai, Tsutomu Tsukada, Kouji Ikeda, Toshio Adachi
  • Patent number: 4655800
    Abstract: An exhaust system utilizes a booster pump and an auxiliary pump of vacuum process apparatus which vacuum treats a substrate with gases of the chlorine series. A vessel of the auxiliary pump on the air exhaust side is filled with an inert gas of a pressure higher than the atmospheric pressure, and a dry adsorption column capable of adsorbing the gases of the chlorine series is connected to an air exhaust pipe of the auxiliary pump. Further, a dust trap having a cooling surface is provided between the booster pump and the auxiliary pump, and the wall surface of the gas passage between the booster pump and the auxiliary pump is heated.
    Type: Grant
    Filed: March 21, 1985
    Date of Patent: April 7, 1987
    Assignee: Anelva Corporation
    Inventors: Tsutomu Tsukada, Ishao Ashaishi, Tatsunori Koizumi, Kouji Ikeda
  • Patent number: 4482419
    Abstract: In a dry etching apparatus comprising a plurality of etching chambers each of which comprises a first and a second electrode member opposite to each other, an object is successively etched in each etching chamber, with the object supported on either the first or the second electrode member, under different distributions of etching rate. When the object is placed on the first electrode member in each etching chamber and a gas is introduced through an aperture formed on the second electrode member, each distribution of etching rate can be varied by changing a position of the aperture. A side wall member may be extended from a periphery of the second electrode member towards the first electrode member in each etching chamber to confine plasma within a space defined by the first and the second electrode members and the side wall member. The side wall member is varied in length and/or diameter from an etching chamber to another to realize the different distributions of etching rate.
    Type: Grant
    Filed: February 2, 1984
    Date of Patent: November 13, 1984
    Assignee: Anelva Corporation
    Inventors: Tsutomu Tsukada, Etsuo Wani, Katsumi Ukai, Teruo Saitoh
  • Patent number: 4430151
    Abstract: In a monitoring method of monitoring status of a silicon layer etched in a hollow space by plasma, a chlorine including gas is introduced into a hollow space to cause CCl-radical to occur in the hollow space. A first spectrum region is selected to detect first emission spectra of the CCl-radical which are variable in intensity only during the etching and which may include a wavelength of 307 nm. Preferably, a second spectrum region is selected to second emission spectra invariable even during the etching and to indicate the beginning and the end of the etching by monitoring a relationship between the first and the second emission spectra. The second spectrum region may include a wavelength of 396 nm. Alternatively, emission spectra of OH-radical which results from water remaining in the hollow space may be monitored as the first emission spectra.
    Type: Grant
    Filed: June 9, 1983
    Date of Patent: February 7, 1984
    Assignee: Anelva Corporation
    Inventor: Tsutomu Tsukada
  • Patent number: 4405989
    Abstract: In order to monitor the status, such as a decreasing or an increasing thickness, of a layer in response to a single light beam produced from a chamber in which the layer is processed, as by etching or sputtering, by the use of plasma, a monitoring device splits, according to spectral regions, the beam into two components of intensities variable with time and calculates a difference between the intensities, a power of the difference, and a ratio between the intensities. The status is monitored by selecting the difference, power, and ratio. The spectral regions may be 3962 and 3050 A for an aluminum layer being etched and 3248 and 8115 A for a copper layer sputter-formed in argon. Preferably, the difference and the power are monitored a predetermined interval of time after start of etch. The ratio is used in combination with a plasma sputtering device.
    Type: Grant
    Filed: March 23, 1981
    Date of Patent: September 20, 1983
    Assignee: Anelva Corporation
    Inventors: Tsutomu Tsukada, Katsumi Ukai