Abstract: A display substrate includes a plurality of pixels. Each of the pixels includes a switching element, a storage capacitor, a storage line and a pixel electrode. The switching element includes a polycrystalline silicon layer having a channel portion and a doped portion, a gate electrode, a source electrode and a drain electrode. The gate electrode is formed on the channel portion and has a lower layer and an upper layer. The source electrode and the drain electrode make contact with the doped portion. The storage capacitor includes a first storage electrode formed from a layer substantially same as the polycrystalline silicon layer and a second storage electrode formed from a layer substantially same as the lower layer of the gate electrode.

Abstract: In a liquid crystal display device includes; a plurality of pixels arranged substantially in a matrix pattern; wherein each of the plurality of pixel includes; first and second thin film transistors including current paths connected to a source line in series, a storage capacitor line, a first capacitor connected between the first and second thin film transistors and connected to the storage capacitor line, a second capacitor connected between one of the source and the drain of the second thin film transistor and a pixel electrode and connected to the storage capacitor line, and a third capacitor including the pixel electrode, a common electrode, and a liquid crystal between the pixel electrode and the common electrode, wherein an overdrive voltage Vover satisfying equation Vover = C ? ? 1 C ? ? 2 + C ? ? lc · Vsig is added to a display signal voltage Vsig and a resultant voltage is applied to the source line.

Abstract: A display device that includes a first substrate having pixel electrodes; a second substrate having a color filter corresponding to the pixel electrodes to display images; a photo switching element disposed at the first substrate; a red or green color filter corresponding to the photo switching element formed at the second substrate to sense an amount of external light; a driving controller configured to output a driving control signal responsive to the amount of external light sensed by the light sensing unit; and a light generation unit configured to provide the display unit with an internal light controlled by the driving control signal. This photo sensor is well suited to human-eye luminosity and uses external light to determine how much backlight is needed.

Abstract: A luminance control circuit for controlling the luminance levels of different colored light sources that lends itself to easy incorporation into display devices is presented. A light emitting diode (LED) substrate includes a plurality of driving thin film transistors (TFTs) including a semiconductor layer deposited on a substrate. A plurality of LEDs for generating lights of different wavelengths is mounted respectively on the plurality of driving TFTs. A plurality of thin film sensors for sensing the luminous intensities of the plurality of LEDs is formed between the plurality of LEDs and the substrate. A luminance control circuit for controlling the driving TFTs has of a plurality of controlling TFTs including a semiconductor layer deposited on the substrate and is connected to the plurality of thin film sensors.

Abstract: A backlight assembly may include a light guide unit, a light source and a reflection module. The light source provides light onto an incident face of the light guide unit. The reflection module may include a first substrate having reflection regions, a lower electrode disposed in each reflection region, a switch element applying an on or off signal to the lower electrode, and an upper electrode. The upper electrode makes contact with or is spaced apart from a reflective face of the light guide unit in accordance with the on or off signal. Thus, light selectively exits the light guide unit through an exiting face of the light guide unit corresponding to each reflection region. A display device has a display module disposed on the exiting face of the light guide unit to display an image. Therefore, the display device has a simplified structure.

Abstract: A display device that includes a first substrate having pixel electrodes; a second substrate having a color filter corresponding to the pixel electrodes to display images; a photo switching element disposed at the first substrate; a red or green color filter corresponding to the photo switching element formed at the second substrate to sense an amount of external light; a driving controller configured to output a driving control signal responsive to the amount of external light sensed by the light sensing unit; and a light generation unit configured to provide the display unit with an internal light controlled by the driving control signal. This photo sensor is well suited to human-eye luminosity and uses external light to determine how much backlight is needed.

Abstract: A backlight assembly may include a light guide unit, a light source and a reflection module. The light source provides light onto an incident face of the light guide unit. The reflection module may include a first substrate having reflection regions, a lower electrode disposed in each reflection region, a switch element applying an on or off signal to the lower electrode, and an upper electrode. The upper electrode makes contact with or is spaced apart from a reflective face of the light guide unit in accordance with the on or off signal. Thus, light selectively exits the light guide unit through an exiting face of the light guide unit corresponding to each reflection region. A display device has a display module disposed on the exiting face of the light guide unit to display an image. Therefore, the display device has a simplified structure.

Abstract: In a liquid crystal display device includes; a plurality of pixels arranged substantially in a matrix pattern; wherein each of the plurality of pixel includes; first and second thin film transistors including current paths connected to a source line in series, a storage capacitor line, a first capacitor connected between the first and second thin film transistors and connected to the storage capacitor line, a second capacitor connected between one of the source and the drain of the second thin film transistor and a pixel electrode and connected to the storage capacitor line, and a third capacitor including the pixel electrode, a common electrode, and a liquid crystal between the pixel electrode and the common electrode, wherein an overdrive voltage Vover satisfying equation Vover = C ? ? ? 1 C ? ? ? 2 + C ? ? ? lc · Vsig is added to a display signal voltage Vsig and a resultant voltage is applied to the source line.

Abstract: A display substrate includes a plurality of pixels. Each of the pixels includes a switching element, a storage capacitor, a storage line and a pixel electrode. The switching element includes a polycrystalline silicon layer having a channel portion and a doped portion, a gate electrode, a source electrode and a drain electrode. The gate electrode is formed on the channel portion and has a lower layer and an upper layer. The source electrode and the drain electrode make contact with the doped portion. The storage capacitor includes a first storage electrode formed from a layer substantially same as the polycrystalline silicon layer and a second storage electrode formed from a layer substantially same as the lower layer of the gate electrode.

Abstract: A luminance control circuit for controlling the luminance levels of different colored light sources that lends itself to easy incorporation into display devices is presented. A light emitting diode (LED) substrate includes a plurality of driving thin film transistors (TFTs) including a semiconductor layer deposited on a substrate. A plurality of LEDs for generating lights of different wavelengths is mounted respectively on the plurality of driving TFTs. A plurality of thin film sensors for sensing the luminous intensities of the plurality of LEDs is formed between the plurality of LEDs and the substrate. A luminance control circuit for controlling the driving TFTs has of a plurality of controlling TFTs including a semiconductor layer deposited on the substrate and is connected to the plurality of thin film sensors.

Abstract: A backlight assembly may include a light guide unit, a light source and a reflection module. The light source provides light onto an incident face of the light guide unit. The reflection module may include a first substrate having reflection regions, a lower electrode disposed in each reflection region, a switch element applying an on or off signal to the lower electrode, and an upper electrode. The upper electrode makes contact with or is spaced apart from a reflective face of the light guide unit in accordance with the on or off signal. Thus, light selectively exits the light guide unit through an exiting face of the light guide unit corresponding to each reflection region. A display device has a display module disposed on the exiting face of the light guide unit to display an image. Therefore, the display device has a simplified structure.

Abstract: A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT with the LDD structure include a side wall and a gate insulation layer. An intermediate layer is provided between the side wall and the gate insulation layer. The intermediate layer is different in layer property from the side wall. When the side wall is formed by an anisotropic etching process, the etching can be stopped on the surface of intermediate layer. As a result, the gate insulation layer and the substrate are protected against the etching.

Abstract: A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT with the LDD structure include a side wall and a gate insulation layer. An intermediate layer is provided between the side wall and the gate insulation layer. The intermediate layer is different in layer property from the side wall. When the side wall is formed by an anisotropic etching process, the etching can be stopped on the surface of intermediate layer. As a result, the gate insulation layer and the substrate are protected against the etching.

Abstract: The method of manufacturing a thin film transistor, including the steps of: a first step, after a poly-crystal silicon film has been formed on a substrate (1), for forming a layer to be formed as an conductive layer (2a) for the thin film transistor by patterning the formed polycrystal silicon film; a second step for doping impurity ions at the layer to be formed as the conductive layer; a third step for cooling the substrate by a cooling mechanism after the second step; and a fourth step for forming a source region (4a.sub.1) and a drain region (4a.sub.2) in the conductive layer, respectively by repeating the second and third steps. By this method, impurities can be doped at microscopic regions, and further the highest possible throughput can be obtained.

Abstract: Disclosed is a semiconductor device such as a light emitting diode, a MOS transistor, a Schottky diode, and CCD. The semiconductor device comprises a SiC layer of a first conductivity type and another SiC layer of a second conductivity type. At least one of the SiC layers of the first and second conductivity types is doped with at least one element selected from the group consisting of Cr, Mo and W.

Abstract: AlN is added to a SiC light emitting layer of an optical semiconductor device in a molecular state, and an association of AlN is formed between crystal lattice points, which are close to each other in said light emitting layer. Said association is largely different from said SiC in degree of electron negativity so that said association traps a carrier in said light emitting layer, and forms an exciton.

Abstract: An optical semiconductor device is provided with a p-type ZnSe semiconductor layer. Si, Cl and O atoms are added, as dopants, to the ZnSe semiconductor layer. Associations of the Si, Cl and O atoms are formed to define a shallow acceptor level in the semiconductor layer. Each of the associations comprises one Si atom, one Cl atom and one O atom by which the lattice points of Se are displaced between those crystal lattice points in the semiconductor layer which are adjacent to one another.