Patents by Inventor Tsutomu Yamadai

Tsutomu Yamadai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for manufacturing a semiconductor device
    Patent number: 6083830
    Abstract: A process for producing a semiconductor device comprising the steps of forming a titanium film having a (002) orientation, forming a titanium nitride film on the titanium film to such a thickness as allows the titanium nitride film to follow the orientation of the titanium film, and forming an aluminum alloy film on the titanium nitride film, thereby to form a layer structure for wiring including the aluminum alloy film having a (111) orientation.
    Type: Grant
    Filed: November 16, 1998
    Date of Patent: July 4, 2000
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Tsutomu Yamadai
  • Process for fabricating a semiconductor device including a tungsten silicide adhesive layer
    Patent number: 5183782
    Abstract: A process for fabricating a semiconductor device including the steps of: depositing a tungsten silicide adhesive layer over a wafer having a SiO.sub.2 insulating layer with a contact hole defined therein; treating the wafer by a rapid thermal annealing technique to impart further adherence to the tungsten silicide adhesive layer; and depositing tungsten over the tungsten silicide adhesive layer by CVD process to form a tungsten plug layer for electrical contact and a tungsten wiring layer.
    Type: Grant
    Filed: November 21, 1991
    Date of Patent: February 2, 1993
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shigeo Onishi, Tsutomu Yamadai, Kazuya Ishihara